Recently added

Laser annealed in-situ P-doped Ge for on-chip laser source apllications

Srinivasan, Ashwyn; Pantouvaki, Marianna; Shimura, Yosuke; Porret, Clément; Van Deun, Rik; Loo, Roger; Van Thourhout, Dries; Van Campenhout, Joris (2016)

Integrated optical frequency shifter on a silicon platform

Spuesens, Thijs; Li, YanLu; Verheyen, Peter; Lepage, Guy; Balakrishnan, Sadhishkumar; Absil, Philippe; Baets, Roel (2016)

RGB-NIR active gated imaging

Spooren, Nick; Geelen, Bert; Tack, Klaas; Lambrechts, Andy; Jayapala, Murali; Ginat, Ran; David, Yara; Levi, Eyal; Grauer, Yoav (2016)

Magnetic tunnel junctions etch and encapsulation process optimization for high-density STT-MRAM applications

Souriau, Laurent; Radisic, Dunja; Kundu, Shreya; Paraschiv, Vasile; Yamashita, Fumiko; Fujimoto, Kiwamu; Tahara, Shigeru; Maeda, K.; Kim, Woojin; Rao, Siddharth; Donadio, Gabriele Luca; Crotti, Davide; Tsvetanova, Diana; Swerts, Johan; Mertens, Sofie; Lin, Tsann; Couet, Sebastien; Piumi, Daniele; Kar, Gouri Sankar; Furnemont, Arnaud (2016)

Magnetoelectric switching and spin wave generation

Soree, Bart; Tierno, Davide; Adelmann, Christoph; Zografos, Odysseas; Vaysset, Adrien; Ciubotaru, Florin (2016)

Back-reflection free grating couplers on silicon-on-insulator

Song, Jeonghwan; Rottenberg, Xavier (2016-09)

56 Gb/s PAM-4 driver IC for long-wavelength VCSEL transmitters

Soenen, Wouter; Vaernewyck, Renato; Yin, Xin; Spiga, Silvia; Amann, Markus-Christian; Van Steenberge, Geert; Mentovich, Elad; Bakopoulos, Paraskevas; Bauwelinck, Johan (2016)

New fast distributed thermal model for analysis of GaN based power devices

Sodan, Vice; Maggioni, Federica; Oprins, Herman; Stoffels, Steve; Baelmans, Martine; De Wolf, Ingrid (2016)

Module-level cell processing of silicon heterojunction interdigitated back-contacted (SHJ-IBC) solar cells with efficiencies above 22%: Towards all-dry processing

Sivaramakrishnan Radhakrishnan, Hariharsudan; Bearda, Twan; Xu, Menglei; Jonnak, Shashi Kiran; Malik, Shuja; Hasan, Mahmudul; Depauw, Valerie; Filipic, Miha; Van Nieuwenhuysen, Kris; Abdulraheem, Yaser; Debucquoy, Maarten; Gordon, Ivan; Szlufcik, Jozef; Poortmans, Jef (2016)

Module-level cell processing of silicon heterojunction interdigitated back-contacted (SHJ-IBC) solar cells with efficiencies above 22%: Towards all-dry processing

Sivaramakrishnan Radhakrishnan, Hariharsudan; Bearda, Twan; Xu, Menglei; Jonnak, Shashi Kiran; Malik, Shuja; Hasan, Mahmudul; Depauw, Valerie; Filipic, Miha; Van Nieuwenhuysen, Kris; Abdulraheem, Yaser; Debucquoy, Maarten; Gordon, Ivan; Szlufcik, Jozef; Poortmans, Jef (2016)

Can we tell something about the barrier for capture from random telegraph signal time constants without changing the temperature?

Simoen, Eddy; Claeys, Cor (2016)

Comparative experimental analysis of time-dependent variability using a transistor test array

Simicic, Marko; Subirats, Alexandre; Weckx, Pieter; Kaczer, Ben; Franco, Jacopo; Roussel, Philippe; Linten, Dimitri; Thean, Aaron; Groeseneken, Guido; Gielen, Georges (2016)

Conference contributions: Recent submissions

Laser annealed in-situ P-doped Ge for on-chip laser source apllications

Integrated optical frequency shifter on a silicon platform

RGB-NIR active gated imaging

Magnetic tunnel junctions etch and encapsulation process optimization for high-density STT-MRAM applications

Magnetoelectric switching and spin wave generation

Back-reflection free grating couplers on silicon-on-insulator

56 Gb/s PAM-4 driver IC for long-wavelength VCSEL transmitters

New fast distributed thermal model for analysis of GaN based power devices

Module-level cell processing of silicon heterojunction interdigitated back-contacted (SHJ-IBC) solar cells with efficiencies above 22%: Towards all-dry processing

Module-level cell processing of silicon heterojunction interdigitated back-contacted (SHJ-IBC) solar cells with efficiencies above 22%: Towards all-dry processing

Manufacturability of dense hole arrays with directed self-assembly using the CHIPS flow

Understanding defects in CHIPS flow hexagonal arrays and strategies for improvement

Generation-recombination noise in advanced CMOS devices

Impact of the gate material on the deep levels in a-Si:H/c-SI metal-insulator-semiconductor capacitors

On the assessment of electrically active defects in high-mobility materials and devices

Study of electrically active defects in epitaxial layers on silicon

Substitutional carbon loss in Si:C stressor layers probed by Deep-Level Transient Spectroscopy

Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices

Can we tell something about the barrier for capture from random telegraph signal time constants without changing the temperature?

Comparative experimental analysis of time-dependent variability using a transistor test array

Conference contributions: Recent submissions

Laser annealed in-situ P-doped Ge for on-chip laser source apllications ﻿

Integrated optical frequency shifter on a silicon platform ﻿

RGB-NIR active gated imaging ﻿

Magnetic tunnel junctions etch and encapsulation process optimization for high-density STT-MRAM applications ﻿

Magnetoelectric switching and spin wave generation ﻿

Back-reflection free grating couplers on silicon-on-insulator ﻿

56 Gb/s PAM-4 driver IC for long-wavelength VCSEL transmitters ﻿

New fast distributed thermal model for analysis of GaN based power devices ﻿

Module-level cell processing of silicon heterojunction interdigitated back-contacted (SHJ-IBC) solar cells with efficiencies above 22%: Towards all-dry processing ﻿

Module-level cell processing of silicon heterojunction interdigitated back-contacted (SHJ-IBC) solar cells with efficiencies above 22%: Towards all-dry processing ﻿

Manufacturability of dense hole arrays with directed self-assembly using the CHIPS flow ﻿

Understanding defects in CHIPS flow hexagonal arrays and strategies for improvement ﻿

Generation-recombination noise in advanced CMOS devices ﻿

Impact of the gate material on the deep levels in a-Si:H/c-SI metal-insulator-semiconductor capacitors ﻿

On the assessment of electrically active defects in high-mobility materials and devices ﻿

Study of electrically active defects in epitaxial layers on silicon ﻿

Substitutional carbon loss in Si:C stressor layers probed by Deep-Level Transient Spectroscopy ﻿

Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices ﻿

Can we tell something about the barrier for capture from random telegraph signal time constants without changing the temperature? ﻿

Comparative experimental analysis of time-dependent variability using a transistor test array ﻿

Laser annealed in-situ P-doped Ge for on-chip laser source apllications

Integrated optical frequency shifter on a silicon platform

RGB-NIR active gated imaging

Magnetic tunnel junctions etch and encapsulation process optimization for high-density STT-MRAM applications

Magnetoelectric switching and spin wave generation

Back-reflection free grating couplers on silicon-on-insulator

56 Gb/s PAM-4 driver IC for long-wavelength VCSEL transmitters

New fast distributed thermal model for analysis of GaN based power devices

Module-level cell processing of silicon heterojunction interdigitated back-contacted (SHJ-IBC) solar cells with efficiencies above 22%: Towards all-dry processing

Module-level cell processing of silicon heterojunction interdigitated back-contacted (SHJ-IBC) solar cells with efficiencies above 22%: Towards all-dry processing

Manufacturability of dense hole arrays with directed self-assembly using the CHIPS flow

Understanding defects in CHIPS flow hexagonal arrays and strategies for improvement

Generation-recombination noise in advanced CMOS devices

Impact of the gate material on the deep levels in a-Si:H/c-SI metal-insulator-semiconductor capacitors

On the assessment of electrically active defects in high-mobility materials and devices

Study of electrically active defects in epitaxial layers on silicon

Substitutional carbon loss in Si:C stressor layers probed by Deep-Level Transient Spectroscopy

Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices

Can we tell something about the barrier for capture from random telegraph signal time constants without changing the temperature?

Comparative experimental analysis of time-dependent variability using a transistor test array