Recently added

High-performance organic thin-film transistors

Mityashin, Alexander; Rolin, Cedric (2016)

Flexible electronics: global trends and opportunities

Mityashin, Alexander (2016)

Foundry approach to volume manufacturing of printed electronics

Mityashin, Alexander (2016)

Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si

Mitard, Jerome; Zhang, En Xia; Fleetwood, Daniel; Hachtel, Jordan; Liang, Chundong; Reed, Robert; Alles, Michael; Schrimpf, Ronald; Linten, Dimitri; Witters, Liesbeth; Collaert, Nadine; Thean, Aaron; Chisholm, Matthew; Pantelides, Sokrates (2016-07)

A 2nd generation of 14/16nm-node compatible strained-Ge pFINFET with improved performance with respect to advanced Si-channel FinFETs

Mitard, Jerome; Witters, Liesbeth; Sasaki, Yuichiro; Arimura, Hiroaki; Schulze, Andreas; Loo, Roger; Ragnarsson, Lars-Ake; Hikavyy, Andriy; Cott, Daire; Chiarella, Thomas; Kubicek, Stefan; Mertens, Hans; Ritzenthaler, Romain; Vrancken, Christa; Favia, Paola; Bender, Hugo; Horiguchi, Naoto; Barla, Kathy; Mocuta, Dan; Mocuta, Anda; Collaert, Nadine; Thean, Aaron (2016-06)

Polymer micro- and nanophotonic sensors realized using replication technologies

Missinne, Jeroen; Teigell Beneitez, Nuria; Mattelin, Marie-Aline; Elmogi Mosad, Ahmed; Bosman, Erwin; Van Steenberge, Geert (2016)

The increasing role of polymers in advanced packaging – from stress buffer layers to wafer level underfills and beyond

Miller, Andy; Rebibis, Kenneth June; Duval, Fabrice; Wang, Teng; Slabbekoorn, John; De Vos, Joeri; Beyne, Eric (2016)

III-V fin patterning in SADP scheme

Milenin, Alexey; Camerotto, Elisabeth; Sun, Noel; Boccardi, Guillaume; Vertommen, Johan; Piumi, Daniele (2016)

Specification of trace metal contamination for image sensors

Mertens, Paul; Lavizzari, Simone; Guerrieri, Stefano (2016)

Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates

Mertens, Hans; Ritzenthaler, Romain; Vaisman Chasin, Adrian; Schram, Tom; Kunnen, Eddy; Hikavyy, Andriy; Ragnarsson, Lars-Ake; Dekkers, Harold; Hopf, Toby; Wostyn, Kurt; Devriendt, Katia; Chew, Soon Aik; Kim, Min-Soo; Kikuchi, Yoshiaki; Rosseel, Erik; Mannaert, Geert; Kubicek, Stefan; Demuynck, Steven; Dangol, Anish; Bosman, Niels; Geypen, Jef; Carolan, Patrick; Bender, Hugo; Barla, Kathy; Horiguchi, Naoto; Mocuta, Dan (2016-12)

Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates

Mertens, Hans; Ritzenthaler, Romain; Hikavyy, Andriy; Kim, Min-Soo; Tao, Zheng; Wostyn, Kurt; Chew, Soon Aik; De Keersgieter, An; Mannaert, Geert; Rosseel, Erik; Schram, Tom; Devriendt, Katia; Tsvetanova, Diana; Dekkers, Harold; Demuynck, Steven; Vaisman Chasin, Adrian; Van Besien, Els; Dangol, Anish; Godny, Stephane; Douhard, Bastien; Bosman, Niels; Richard, Olivier; Geypen, Jef; Bender, Hugo; Barla, Kathy; Mocuta, Dan; Horiguchi, Naoto; Thean, Aaron (2016)

Biomedical wireless raadar sensor network for indoor emergency situations detection and vital signs monitoring

Mercuri, Marco; Karsmakers, Peter; Vanrumste, Bart; Leroux, Paul; Schreurs, Dominique (2016)

Normally-off HEMTs with p-GaN gate: stability and lifetime extrapolation

Meneghesso, Gaudenzio; Meneghini, Matteo; Rossetto, Isabella; Rizzato, Vanessa; Stoffels, Steve; Van Hove, Marleen; Wu, Tian-Li; You, Shuzhen; Posthuma, Niels; Decoutere, Stefaan; Zanoni, Enrico (2016)

Influence of the Ge amount at the source on transistor efficiency of vertical gate all around TFETs for different conduction regimes

Mendes Bordallo, Ciao Cesar; Sivieri, Victor B.; Martino, Joao Antonio; Agopian, Paula G. D.; Rooyackers, Rita; Vandooren, Anne; Simoen, Eddy; Thean, Aaron; Claeys, Cor (2016)

New understanding of dielectric breakdown in advanced FinFET devices – physical, electrical, statistical and multiphysics study

Mei, S; Bosman, M.; Raghavan, N.; Linten, Dimitri; Groeseneken, Guido; Horiguchi, Naoto; Pey, K.L. (2016)

Solid-state 3D Li-ion batteries

Mees, Maarten; Vereecken, Philippe (2016)

Conference contributions: Recent submissions

High-performance organic thin-film transistors

Flexible electronics: global trends and opportunities

Foundry approach to volume manufacturing of printed electronics

Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si

A 2nd generation of 14/16nm-node compatible strained-Ge pFINFET with improved performance with respect to advanced Si-channel FinFETs

Polymer micro- and nanophotonic sensors realized using replication technologies

The increasing role of polymers in advanced packaging – from stress buffer layers to wafer level underfills and beyond

III-V fin patterning in SADP scheme

Specification of trace metal contamination for image sensors

Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates

Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates

Biomedical wireless raadar sensor network for indoor emergency situations detection and vital signs monitoring

Normally-off HEMTs with p-GaN gate: stability and lifetime extrapolation

Influence of the Ge amount at the source on transistor efficiency of vertical gate all around TFETs for different conduction regimes

Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs

Challenges for APT in advanced semiconductor technology research

Emitter shape evolution during field evaporation and its impact on the reconstructed data of SiGe fins embedded in SiO2

Plasmonic-organic hybrid (POH) modulators

New understanding of dielectric breakdown in advanced FinFET devices – physical, electrical, statistical and multiphysics study

Solid-state 3D Li-ion batteries

Conference contributions: Recent submissions

High-performance organic thin-film transistors ﻿

Flexible electronics: global trends and opportunities ﻿

Foundry approach to volume manufacturing of printed electronics ﻿

Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si ﻿

A 2nd generation of 14/16nm-node compatible strained-Ge pFINFET with improved performance with respect to advanced Si-channel FinFETs ﻿

Polymer micro- and nanophotonic sensors realized using replication technologies ﻿

The increasing role of polymers in advanced packaging – from stress buffer layers to wafer level underfills and beyond ﻿

III-V fin patterning in SADP scheme ﻿

Specification of trace metal contamination for image sensors ﻿

Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates ﻿

Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates ﻿

Biomedical wireless raadar sensor network for indoor emergency situations detection and vital signs monitoring ﻿

Normally-off HEMTs with p-GaN gate: stability and lifetime extrapolation ﻿

Influence of the Ge amount at the source on transistor efficiency of vertical gate all around TFETs for different conduction regimes ﻿

Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs ﻿

Challenges for APT in advanced semiconductor technology research ﻿

Emitter shape evolution during field evaporation and its impact on the reconstructed data of SiGe fins embedded in SiO2 ﻿

Plasmonic-organic hybrid (POH) modulators ﻿

New understanding of dielectric breakdown in advanced FinFET devices – physical, electrical, statistical and multiphysics study ﻿

Solid-state 3D Li-ion batteries ﻿

High-performance organic thin-film transistors

Flexible electronics: global trends and opportunities

Foundry approach to volume manufacturing of printed electronics

Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si

A 2nd generation of 14/16nm-node compatible strained-Ge pFINFET with improved performance with respect to advanced Si-channel FinFETs

Polymer micro- and nanophotonic sensors realized using replication technologies

The increasing role of polymers in advanced packaging – from stress buffer layers to wafer level underfills and beyond

III-V fin patterning in SADP scheme

Specification of trace metal contamination for image sensors

Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates

Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates

Biomedical wireless raadar sensor network for indoor emergency situations detection and vital signs monitoring

Normally-off HEMTs with p-GaN gate: stability and lifetime extrapolation

Influence of the Ge amount at the source on transistor efficiency of vertical gate all around TFETs for different conduction regimes

Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs

Challenges for APT in advanced semiconductor technology research

Emitter shape evolution during field evaporation and its impact on the reconstructed data of SiGe fins embedded in SiO2

Plasmonic-organic hybrid (POH) modulators

New understanding of dielectric breakdown in advanced FinFET devices – physical, electrical, statistical and multiphysics study

Solid-state 3D Li-ion batteries