Browsing Articles by imec author "2fe648fa312926010c0e702b779c3ef658c311f8"
Now showing items 1-20 of 101
-
A fast and accurate method to study the impact of interface traps on germanium MOS performance
Hellings, Geert; Eneman, Geert; Mitard, Jerome; Martens, Koen; Wang, Wei-E; Hoffmann, Thomas Y.; Meuris, Marc; De Meyer, Kristin (2011) -
Analysis of the temperature dependence of trap-assisted tunneling in Ge pFET junctions
Bargallo Gonzalez, Mireia; Eneman, Geert; Wang, Gang; De Jaeger, Brice; Simoen, Eddy; Claeys, Cor (2011) -
Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy
Nuytten, Thomas; Bogdanowicz, Janusz; Witters, Liesbeth; Eneman, Geert; Hantschel, Thomas; Schulze, Andreas; Favia, Paola; Bender, Hugo; De Wolf, Ingrid; Vandervorst, Wilfried (2018) -
Band offsets in biaxially stressed SiGe layers for arbitrary orientations
Eneman, Geert; Roussel, Philippe; Brunco, David; Collaert, Nadine; Mocuta, Anda; Thean, Aaron (2016) -
Bandlike and localized states of extended defects in n-type In0.53Ga0.47As
Hsu, Brent; Simoen, Eddy; Merckling, Clement; Eneman, Geert; Mols, Yves; Alian, AliReza; Langer, Robert; Collaert, Nadine; Heyns, Marc (2018) -
Challenges and opportunities in advanced Ge pMOSFETs
Simoen, Eddy; Mitard, Jerome; Hellings, Geert; Eneman, Geert; De Jaeger, Brice; Witters, Liesbeth; Vincent, Benjamin; Loo, Roger; Delabie, Annelies; Sioncke, Sonja; Caymax, Matty; Claeys, Cor (2012) -
Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
Vincent, Benjamin; Shimura, Y.; Takeuchi, Shotaro; Nishimura, T.; Eneman, Geert; Firrincieli, Andrea; Demeulemeester, Jelle; Vantomme, Andre; Clarysse, Trudo; Nakatsuka, O.; Zaima, S.; Dekoster, Johan; Caymax, Matty; Loo, Roger (2011) -
Comparison between experimental and simulated strain profiles in Ge channels with embedded source/drain stressors
Buhler, Rudolf; Eneman, Geert; Favia, Paola; Bender, Hugo; Vincent, Benjamin; Hikavyy, Andriy; Loo, Roger; Martino, Joao; Claeys, Cor; Simoen, Eddy; Collaert, Nadine; Thean, Aaron (2014) -
Consideration of UFET architecture for the 5nm node and beyond logic transistor
Kumar Das, Uttam; Eneman, Geert; Velampati, Ravi; Chauhan, Y.; Jinesh, K.; Bhattacharya, T. (2018) -
Defect analysis of strained silicon on thin strain-relaxed buffer layers for high mobility transistors
Eneman, Geert; Simoen, Eddy; Delhougne, Romain; Gaubas, Eugenijus; Simons, Veerle; Roussel, Philippe; Verheyen, Peter; Lauwers, Anne; Loo, Roger; Vandervorst, Wilfried; De Meyer, Kristin; Claeys, Cor (2005) -
Defect assessment and leakage control in Ge junctions
Gonzalez, M.B.; Simoen, Eddy; Eneman, Geert; De Jaeger, Brice; Wang, G.; Loo, Roger; Claeys, Cor (2014) -
Defect-related excess low-frequency noise in Ge-on-Si pMOSFETs
Simoen, Eddy; Mitard, Jerome; De Jaeger, Brice; Eneman, Geert; Dobbie, A.; Myronov, M.; Leadley, D.R.; Meuris, Marc; Hoffmann, Thomas Y.; Claeys, Cor (2011) -
Degradation Mapping and Impact of Device Dimension on IGZO TFTs BTI
Rinaudo, Pietro; Vaisman Chasin, Adrian; Franco, Jacopo; Wu, Zhicheng; Subhechha, Subhali; Arutchelvan, Goutham; Eneman, Geert; Yengula Venkata Ramana, Bhuvaneshwari; Rassoul, Nouredine; Delhougne, Romain; Kaczer, Ben; De Wolf, Ingrid; Kar, Gouri Sankar (2023) -
Design and analysis of the In sub(0.53)Ga sub(0.47)As implant-free quantum-well device structure
Benbakhti, Brahim; Kalna, Karol; Chan, KanHou; Towie, Ewan; Hellings, Geert; Eneman, Geert; De Meyer, Kristin; Meuris, Marc; Asenov, Asen (2011) -
Device assessment of electrically active defects in high-mobility materials
Claeys, Cor; Simoen, Eddy; Eneman, Geert; Ni, Kai; Hikavyy, Andriy; Loo, Roger; Gupta, Somya; Merckling, Clement; Alian, AliReza; Caymax, Matty (2016) -
Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers
Simoen, Eddy; Brouwers, Gijs; Eneman, Geert; Bargallo Gonzalez, Mireia; De Jaeger, Brice; Mitard, Jerome; Brunco, David; Souriau, Laurent; Cody, N.; Thomas, S.; Meuris, Marc (2008) -
Device exploration of nanosheet transistors for sub-7nm technology node
Jang, Doyoung; Yakimets, Dmitry; Eneman, Geert; Schuddinck, Pieter; Garcia Bardon, Marie; Raghavan, Praveen; Spessot, Alessio; Verkest, Diederik; Mocuta, Anda (2017) -
Dielectric quality and reliability of FUSI/HfSiON devices with process induced strain
Shickova, Adelina; Kaczer, Ben; Simoen, Eddy; Verheyen, Peter; Eneman, Geert; Jurczak, Gosia; Absil, Philippe; Maes, Herman; Groeseneken, Guido (2007) -
Direct measurement of MOSFET channel strain by means of backside etching and Raman spectroscopy on long-channel devices
Agaiby, Rouzet M. B.; Olsen, Sarah; Eneman, Geert; Simoen, Eddy; Augendre, Emmanuel; O'Neill, Anthony G. (2010) -
Effects of electron irradiation on SiGe devices
Ohyama, Hidenori; Nagano, T.; Takakura, K.; Motoki, M.; Matsuo, K.; Nakamura, H.; Sawada, M.; Kuboyama, S.; Bargallo Gonzalez, Mireia; Simoen, Eddy; Eneman, Geert; Claeys, Cor (2010)