Browsing Articles by imec author "3bb3484ca2d6688531eeddef045ec9d1b27d98a0"
Now showing items 1-20 of 106
-
1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor
Lee, Jae Woo; Cho, Moon Ju; Simoen, Eddy; Ritzenthaler, Romain; Togo, Mitsuhiro; Boccardi, Guillaume; Mitard, Jerome; Ragnarsson, Lars-Ake; Chiarella, Thomas; Veloso, Anabela; Horiguchi, Naoto; Thean, Aaron; Groeseneken, Guido (2013-03) -
A comprehensive benchmark and optimization of 5-nm lateral and vertical GAA 6T-SRAMs
Huynh Bao, Trong; Sakhare, Sushil; Yakimets, Dmitry; Ryckaert, Julien; Thean, Aaron; Mercha, Abdelkarim; Verkest, Diederik; Wambacq, Piet (2016) -
A low-power HKMG CMOS platform compatible with DRAM node 2x and beyond
Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; Caillat, Christian; Aoulaiche, Marc; Cho, Moon Ju; Noh, Kyung Bong; Son, Yunik; Na, Hoon Jo; Kauerauf, Thomas; Douhard, Bastien; Nazir, Aftab; Chew, Soon Aik; Milenin, Alexey; Altamirano Sanchez, Efrain; Schoofs, Geert; Albert, Johan; Sebaai, Farid; Vecchio, Emma; Paraschiv, Vasile; Vandervorst, Wilfried; Lee, Sun Ghil; Collaert, Nadine; Fazan, Pierre; Horiguchi, Naoto; Thean, Aaron (2014) -
A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET
Vais, Abhitosh; Franco, Jacopo; Martens, Koen; Lin, Dennis; Sioncke, Sonja; Putcha, Vamsi; Nyns, Laura; Maes, Jan; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, Xiaoqiang; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2017) -
A simplified method for (circular) transmission line model simulation and ultralow contact resistivity extraction
Yu, Hao; Schaekers, Marc; Schram, Tom; Collaert, Nadine; De Meyer, Kristin; Horiguchi, Naoto; Thean, Aaron; Barla, Kathy (2014) -
A TCAD low-field electron mobility model for thin-body InGaAs on InP MOSFETs calibrated to experimental characteristics
Betti Beneventi, Giovanni; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Alian, AliReza; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Baccarani, Giorgio (2015) -
An analytical model of MOS admittance for border trap density extraction in high-k dielectrics of III-V MOS devices
Vais, Abhitosh; Martens, Koen; Lin, Dennis; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2016) -
Analog performance of vertical nanowireTFETs as a function of temperature and transport mechanism
Dalle Valle Martino, Marcio; Neves Souza, Felipe; Ghedini der Agopian, Paula; Martino, Joao Antonio; Vandooren, Anne; Rooyackers, Rita; Simoen, Eddy; Thean, Aaron; Claeys, Cor (2015) -
Analytical model for anomalous positive bias temperature instability in La-based HfO2 nFETs based on independent characterization of charging components
Toledano Luque, Maria; Kaczer, Ben; Aoulaiche, Marc; Spessot, Alessio; Roussel, Philippe; Ritzenthaler, Romain; Schram, Tom; Thean, Aaron; Groeseneken, Guido (2013) -
Band offsets in biaxially stressed SiGe layers for arbitrary orientations
Eneman, Geert; Roussel, Philippe; Brunco, David; Collaert, Nadine; Mocuta, Anda; Thean, Aaron (2016) -
Benchmarking of MoS2 FETs with multigate Si-FET options for 5 nm and beyond
Agarwal Kumar, Tarun; Yakimets, Dmitry; Raghavan, Praveen; Radu, Iuliana; Thean, Aaron; Heyns, Marc; Dehaene, Wim (2015) -
Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs
Franco, Jacopo; Kaczer, Ben; Vais, Abhitosh; Alian, AliReza; Arimura, Hiroaki; Putcha, Vamsi; Sioncke, Sonja; Waldron, Niamh; Zhou, Daisy; Nyns, Laura; Mitard, Jerome; Heyns, Marc; Groeseneken, Guido; Collaert, Nadine; Linten, Dimitri; Thean, Aaron (2016) -
Bilayer graphene tunneling-FET for sub-0.2 V digital CMOS logic applications
Agarwal Kumar, Tarun; Nourbakhsh, Amirhasan; Raghavan, Praveen; Radu, Iuliana; Verhelst, Marian; De Gendt, Stefan; Heyns, Marc; Thean, Aaron (2014) -
Border traps in InGaAs nMOSFETs assessed by low-frequency noise
Scarpino, Mercedes; Gupta, Somya; Lin, Dennis; Alian, AliReza; Crupi, Felice; Collaert, Nadine; Thean, Aaron; Simoen, Eddy (2014) -
Calibration of the effective tunneling bandgap in GaAsSb/InGaAs for improved TFET performance prediction
Smets, Quentin; Verhulst, Anne; El Kazzi, Salim; Gundlach, David; Richter, Curt; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; Heyns, Marc (2016) -
Can p-channel tunnel-field-effect transistors perform as good as n-channel tunnel-FETs?
Verhulst, Anne; Verreck, Devin; Pourghaderi, Mohammad Ali; Van de Put, Maarten; Soree, Bart; Groeseneken, Guido; Collaert, Nadine; Thean, Aaron (2014) -
Chemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applications
Nourbakhsh, Amirhasan; Agarwal Kumar, Tarun; Klekachev, Alexander; Asselberghs, Inge; Cantoro, Mirco; Huyghebaert, Cedric; Heyns, Marc; Verhelst, Marian; Thean, Aaron; De Gendt, Stefan (2014-08) -
Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures
Vinicius de Oliveira, Alberto; Agopian, Paula Ghedini Der; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor; Collaert, Nadine; Thean, Aaron (2016) -
Comparison between experimental and simulated strain profiles in Ge channels with embedded source/drain stressors
Buhler, Rudolf; Eneman, Geert; Favia, Paola; Bender, Hugo; Vincent, Benjamin; Hikavyy, Andriy; Loo, Roger; Martino, Joao; Claeys, Cor; Simoen, Eddy; Collaert, Nadine; Thean, Aaron (2014) -
Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors
Agarwal Kumar, Tarun; Soree, Bart; Radu, Iuliana; Raghavan, Praveen; Fiori, Gianluca; Iannaccone, Giuseppe; Thean, Aaron; Heyns, Marc; Dehaene, Wim (2016)