Browsing Articles by imec author "981511c1c10f71a98d60f52012093e0b2fdb65d8"
Now showing items 1-20 of 79
-
3D sequential stacked planar devices featuring low-temperature replacement metal gate junctionless top devices with improved reliability
Vandooren, Anne; Franco, Jacopo; Parvais, Bertrand; Wu, Zhicheng; Witters, Liesbeth; Walke, Amey; Li, Waikin; Peng, Lan; Deshpande, Veeresh Vidyadhar; Bufler, Fabian; Rassoul, Nouredine; Hellings, Geert; Jamieson, Geraldine; Inoue, Fumihiro; Verbinnen, Greet; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Vecchio, Emma; Tao, Zheng; Rosseel, Erik; Vanherle, Wendy; Hikavyy, Andriy; Chan, BT; Ritzenthaler, Romain; Besnard, Guillaume; Schwarzenbach, Walter; Gaudin, Gweltaz; Radu, Ionut; Nguyen, Bich-Yen; Waldron, Niamh; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2018-11) -
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
Kaczer, Ben; Franco, Jacopo; Weckx, Pieter; Roussel, Philippe; Putcha, Vamsi; Bury, Erik; Simicic, Marko; Vaisman Chasin, Adrian; Linten, Dimitri; Parvais, Bertrand; Catthoor, Francky; Rzepa, Gerhard; Waltl, Michael; Grasser, Tibor (2018) -
A defect-centric analysis of the temperature dependence of the channel hot carrier degradation in nMOSFETs
Procel, Luis Miguel; Crupi, Felice; Lionel, Trojman; Franco, Jacopo; Kaczer, Ben (2016) -
A defect-centric perspective on channel hot carrier variability in nMOSFETs
Procel, Luis Miguel; Crupi, Felice; Franco, Jacopo; Trojman, Lionel; Kaczer, Ben; Wils, N.; Tuinhout, H. (2015) -
A multi-energy level agnostic approach for defect generation during TDDB stress
Vici, Andrea; Degraeve, Robin; Kaczer, Ben; Franco, Jacopo; Van Beek, Simon; De Wolf, Ingrid (2022) -
A multi-energy level agnostic simulation approach to defect generation
Vici, Andrea; Degraeve, Robin; Kaczer, Ben; Franco, Jacopo; Van Beek, Simon; De Wolf, Ingrid (2021) -
A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET
Vais, Abhitosh; Franco, Jacopo; Martens, Koen; Lin, Dennis; Sioncke, Sonja; Putcha, Vamsi; Nyns, Laura; Maes, Jan; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, Xiaoqiang; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2017) -
A Pragmatic Model to Predict Future Device Aging
Brown, James; Tok, Kean Hong; Gao, Rui; Ji, Zhigang; Zhang, Weidong; Marsland, John S.; Chiarella, Thomas; Franco, Jacopo; Kaczer, Ben; Linten, Dimitri; Zhang, Jian Fu (2023) -
An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel
Ji, Zhigang; Zhang, Xiong; Franco, Jacopo; Gao, Rui; Duan, Meng; Zhang, Jian Fu; Zhang, Wei Dong; Kaczer, Ben; Alian, AliReza; Linten, Dimitri; Zhou, Daisy; Collaert, Nadine; De Gendt, Stefan; Groeseneken, Guido (2015) -
Analytical Markov Model to Calculate TDDB at Any Voltage and Temperature Stress Condition
Vici, Andrea; Degraeve, Robin; Franco, Jacopo; Kaczer, Ben; Roussel, Philippe; De Wolf, Ingrid (2023) -
Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs
Franco, Jacopo; Kaczer, Ben; Vais, Abhitosh; Alian, AliReza; Arimura, Hiroaki; Putcha, Vamsi; Sioncke, Sonja; Waldron, Niamh; Zhou, Daisy; Nyns, Laura; Mitard, Jerome; Heyns, Marc; Groeseneken, Guido; Collaert, Nadine; Linten, Dimitri; Thean, Aaron (2016) -
BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic
Franco, Jacopo; Graziano, Salvatore; Kaczer, Ben; Crupi, Felice; Ragnarsson, Lars-Ake; Grasser, Tibor; Groeseneken, Guido (2012) -
Buried silicon-germanium pMOSFETs: experimental analysis in VLSI logic circuits under aggressive voltage scaling
Crupi, Felice; Alioto, Massimo; Franco, Jacopo; Magnone, Paolo; Kaczer, Ben; Groeseneken, Guido; Mitard, Jerome; Witters, Liesbeth; Hoffmann, Thomas Y. (2012) -
Channel hot carrier degradation mechanism in long/short channel n-FinFETs
Cho, Moon Ju; Roussel, Philippe; Kaczer, Ben; Degraeve, Robin; Franco, Jacopo; Aoulaiche, Marc; Chiarella, Thomas; Kauerauf, Thomas; Horiguchi, Naoto; Groeseneken, Guido (2013) -
Charge based DC compact modeling of bulk FinFET transistor
Cerdeira, Antonio; Garduno, Ivan; Tinoco, Julio; Ritzenthaler, Romain; Franco, Jacopo; Togo, Mitsuhiro; Chiarella, Thomas; Claeys, Cor (2013) -
Comparison of NBTI aging on adder architectures and ring oscillators in the downscaled technologies
Kosemura, Daisuke; Weckx, Pieter; Morrison, Sebastien; Franco, Jacopo; Toledano Luque, Maria; Cho, Moon Ju; Raghavan, Praveen; Kaczer, Ben; Jang, Doyoung; Miyaguchi, Kenichi; Garcia Bardon, Marie; Catthoor, Francky; Van der Perre, Liesbet; Lauwereins, Rudy; Groeseneken, Guido (2015) -
COMPHY - A compact-physics framework for unified modeling of BTI
Rzepa, Gerhard; Franco, Jacopo; O'Sullivan, Barry; Subirats, Alexandre; Simicic, Marko; Hellings, Geert; Weckx, Pieter; Jech, M.; Knobloch, T.; Waltl, M.; Roussel, Philippe; Linten, Dimitri; Kaczer, Ben; Grasser, T. (2018) -
Comphy v3.0-A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices
Waldhoer, Dominic; Schleich, Christian; Michl, Jakob; Grill, Alexander; Claes, Dieter; Karl, Alexander; Knobloch, Theresia; Rzepa, Gerhard; Franco, Jacopo; Kaczer, Ben; Waltl, Michael; Grasser, Tibor (2023) -
Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
Wu, Tian-Li; Marcon, Denis; Bakeroot, Benoit; De Jaeger, Brice; Lin, Dennis; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Groeseneken, Guido; Decoutere, Stefaan (2015) -
Dangling bond defects in silicon-passivated strained-Si1xGex channel layers
Madia, Oreste; Kepa, Jacek; Afanas'ev, Valeri; Franco, Jacopo; Kaczer, Ben; Hikavyy, Andriy; Stesmans, Andre (2020)