Browsing Articles by imec author "07761243442a75daaa75613333bbbe534d580f8f"
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Atomic layer deposition of ruthenium thin films from (ethylbenzyl) (1-ethyl-1,4-cyclohexadienyl) Ru: process characteristics, surface chemistry, and film properties
Popovici, Mihaela Ioana; Groven, Benjamin; Marcoen, Kristof; Phung, Quan; Dutta, Shibesh; Swerts, Johan; Meersschaut, Johan; Van den Berg, Jaap; Franquet, Alexis; Moussa, Alain; Vanstreels, Kris; Lagrain, Pieter; Bender, Hugo; Jurczak, Gosia; Van Elshocht, Sven; Delabie, Annelies; Adelmann, Christoph (2017) -
Atomic layer deposition of ruthenium with TiN interface for sub-10nm advanced interconnects beyond copper
Wen, Liang Gong; Roussel, Philippe; Varela Pedreira, Olalla; Briggs, Basoene; Groven, Benjamin; Dutta, Shibesh; Popovici, Mihaela Ioana; Heylen, Nancy; Ciofi, Ivan; Vanstreels, Kris; Osterberg, Frederik; Hansen, Ole; Petersen, Dirch H.; Opsomer, Karl; Detavernie, Christophe; Wilson, Chris; Van Elshocht, Sven; Croes, Kristof; Bommels, Jurgen; Tokei, Zsolt; Adelmann, Christoph (2016-09) -
Atomic layer deposition of tantalum oxide and tantalum silicate from chloride precursors
Adelmann, Christoph; Delabie, Annelies; Schepers, Bart; Rodriguez, Leonard; Franquet, Alexis; Conard, Thierry; Opsomer, Karl; Vaesen, Inge; Moussa, Alain; Pourtois, Geoffrey; Pierloot, Christine; Caymax, Matty; Van Elshocht, Sven (2012) -
Atomic layer deposition of tantalum oxide and tantalum silicate from TaCl5, SiCl4, and O3: growth behaviour and film characteristics
Han, Jeong Hwan; Ungur, Elisaveta; Franquet, Alexis; Opsomer, Karl; Conard, Thierry; Moussa, Alain; De Gendt, Stefan; Van Elshocht, Sven; Adelmann, Christoph (2013-07) -
Atomic-layer-deposited tantalum silicate as a gate dielectric for III-V MOS devices
Adelmann, Christoph; Lin, Dennis; Nyns, Laura; Schepers, Bart; Delabie, Annelies; Van Elshocht, Sven; Caymax, Matty (2011) -
Backward volume vs Damon-Eshbach: a travelling spin wave spectroscopy comparison
Bhaskar, Umesh kumar; Talmelli, Giacomo; Ciubotaru, Florin; Adelmann, Christoph; Devolder, Thibaut (2020) -
Band alignment and electron traps in Y2O3 layers on (100) Si
Wang, Wan Chih; Badylevitch, M.; Afanasiev, Valeri; Stesmans, Andre; Adelmann, Christoph; Van Elshocht, Sven; Kittl, Jorge; Lukosius, M.; Walczyk, Ch.; Wenger, Ch. (2009) -
BPZT HBARs for magnetoelastic stress generation at GHz frequencies
Bhaskar, Umesh; Tierno, Davide; Talmelli, Giacomo; Ciubotaru, Florin; Adelmann, Christoph; Devolder, Thibaut (2020) -
Capacitance-voltage characterization of GaAs-Oxide interfaces
Brammertz, Guy; Lin, Dennis; Martens, Koen; Mercier, David; Merckling, Clement; Penaud, Julien; Adelmann, Christoph; Sioncke, Sonja; Wang, Wei-E; Caymax, Matty; Meuris, Marc; Heyns, Marc (2008) -
Charge instability of atomic-layer deposited TaSiOx insulators on Si, InP, and In0.53Ga0.47As
Afanasiev, Valeri; Chou, H.Y.; Thoan, N.H.; Adelmann, Christoph; Lin, Dennis; Houssa, Michel; Stesmans, Andre (2012) -
CMOS-compatible dielectric constant engineering by embedding metallic particles in aluminum oxide
Put, Brecht; Adelmann, Christoph; Swerts, Johan; Rooyackers, Rita; Tielens, Hilde; Van Elshocht, Sven; Heyns, Marc; Radu, Iuliana (2013) -
Compact tunable YIG-based RF resonators
Costa, Diogo; Figeys, Bruno; Sun, Xiao; Van Hoovels, Nele; Tilmans, Harrie; Ciubotaru, Florin; Adelmann, Christoph (2021) -
Compositional depth profiling of TaCN thin films
Adelmann, Christoph; Conard, Thierry; Franquet, Alexis; Brijs, Bert; Munnik, Frans; Burgess, Simon; Witters, Thomas; Meersschaut, Johan; Kittl, Jorge; Vandervorst, Wilfried; Van Elshocht, Sven (2012) -
Confined magnetoelastic waves in thin waveguides
Vanderveken, Frederic; Mulkers, Jeroen; Leliaert, Jonathan; Van Waeyenberge, Bartel; Soree, Bart; Zografos, Odysseas; Ciubotaru, Florin; Adelmann, Christoph (2021) -
Demonstration of 2e12/cm-2-eV-1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5nm EOT
Gaur, Abhinav; Balaji, Yashwanth; Lin, Dennis; Adelmann, Christoph; Van Houdt, Jan; Heyns, Marc; Mocuta, Dan; Radu, Iuliana (2017) -
Demonstration of low Vt Ni-FUSI N-MOSFETs with SiON dielectrics by using a Dy2O3 cap layer
Yu, HongYu; Chang, Shou-Zen; Veloso, Anabela; Lauwers, Anne; Adelmann, Christoph; Onsia, Bart; Lehnen, Peer; Kauerauf, Thomas; Brus, Stephan; Absil, Philippe; Biesemans, Serge (2007-11) -
Demonstration of metal-gated low Vt n-MOSFETs using a Poly-Si/TaN/Dy2O3/SiON gate stack with a scaled EOT value
Yu, HongYu; Singanamalla, Raghunath; Ragnarsson, Lars-Ake; Chang, Vincent; Cho, Hag-Ju; Mitsuhashi, Riichirou; Adelmann, Christoph; Van Elshocht, Sven; Lehnen, Peer; Chang, Shou-Zen; Yin, K.M.; Schram, Tom; Kubicek, Stefan; De Gendt, Stefan; Absil, Philippe; De Meyer, Kristin; Biesemans, Serge (2007) -
Development of ALD HfZrOx with TDEAH/TDEAZ and H2O
Shi, Xiaoping; Tielens, Hilde; Takeoka, Shinji; Nakabayashi, Takashi; Nyns, Laura; Adelmann, Christoph; Delabie, Annelies; Schram, Tom; Ragnarsson, Lars-Ake; Schaekers, Marc; Date, Lucien; Schreutelkamp, Rob; Van Elshocht, Sven (2011) -
Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films
Adelmann, Christoph; Venugopalan, Sriram; Van Elshocht, Sven; Lehnen, Peer; Conard, Thierry; De Gendt, Stefan (2007-10) -
Effect of annealing ferroelectric HfO2 thin films: In situ, high temperature X-ray diffraction
Park, Min Hyuk; Chung, Ching-Chang; Schenk, Tony; Richter, Claudia; Opsomer, Karl; Detavernier, Christophe; Adelmann, Christoph; Jones, Jacob; Mikolajick, Thomas; Schroeder, Uwe (2018)