Browsing Presentations by imec author "2fe648fa312926010c0e702b779c3ef658c311f8"
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Atomic layer deposition as an enabling technology for fabrication of germanium MOS transistor
Eneman, Geert; Delabie, Annelies; Van Elshocht, Sven; De Jaeger, Brice; Nicholas, Gareth; Martens, Koen; Brunco, David; Zimmerman, Paul; Houssa, Michel; Pourtois, Geoffrey; Kaczer, Ben; Leys, Frederik; Winderickx, Gillis; Huyghebaert, Cedric; Terzieva, Valentina; Loo, Roger; Caymax, Matty; Meuris, Marc; Heyns, Marc (2007) -
Characteristics and integration of selectively grown strain-relaxed SiGe buffer layers
Caymax, Matty; Delhougne, Romain; Loo, Roger; Eneman, Geert; Verheyen, Peter (2005) -
Defect analysis of strained silicon on thin strain-relaxed buffer layers for high mobility Transistors
Eneman, Geert; Simoen, Eddy; Delhougne, Romain; Gaubas, Eugenijus; Simons, Veerle; Roussel, Philippe; Verheyen, Peter; Lauwers, Anne; Loo, Roger; Vandervorst, Wilfried; De Meyer, Kristin; Claeys, Cor (2004) -
Electrical characterization of germanium for advanced devices
Yang, Rui; Simoen, Eddy; Eneman, Geert; Wang, Gang; Claeys, Cor (2008) -
Ge and III/V: the CMOS of the future
Heyns, Marc; Adelmann, Christoph; Bellenger, Florence; Brammertz, Guy; Brunco, David; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Kaczer, Ben; Lin, Dennis; Martens, Koen; Meuris, Marc; Mitard, Jerome; Opsomer, Karl; Pourtois, Geoffrey; Satta, Alessandra; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Souriau, Laurent; Terzieva, Valentina; Van Elshocht, Sven (2007) -
Germanium channel MOSFETs
Eneman, Geert (2008) -
III-V and germanium FinFET devices integrated on a 300mm Si platform
Collaert, Nadine; Waldron, Niamh; Merckling, Clement; Witters, Liesbeth; Loo, Roger; Mitard, Jerome; Pourghaderi, Mohammad Ali; Eneman, Geert; Barla, Kathy; Thean, Aaron (2014) -
Impact of halo implant on the hot carrier reliability of germanium pMOSFETs
Franco, Jacopo; Eneman, Geert; Kaczer, Ben; Mitard, Jerome; Groeseneken, Guido (2010) -
Impact of stress on MOS devices
Eneman, Geert (2018) -
Material assessment for uni-axial strained Ge pMOS -1: characterization of GeSn(B) materials
Vincent, Benjamin; Shimura, Yosuke; Takeuchi, Shotaro; Nishimura, Tsuyoshi; Demeulemeester, Jelle; Eneman, Geert; Clarysse, Trudo; Vandervorst, Wilfried; Vantomme, Andre; Nakatsuka, Osamu; Zaima, Shigeaki; Dekoster, Johan; Caymax, Matty; Loo, Roger (2010) -
Nano-beam diffraction investigation of the strain evolution in SiGe channel pFETs with gate first or gate last process
Favia, Paola; Eneman, Geert; Yamaguchi, Shinpei; Witters, Liesbeth; Bender, Hugo (2012) -
New opportunities in device scaling: How the high performing strained Ge pFINFET can help the space industry?
Mitard, Jerome; Witters, Liesbeth; Collaert, Nadine; Linten, Dimitri; Eneman, Geert; Claeys, Cor; Heyns, Marc; Mocuta, Anda; Thean, Aaron (2016) -
P+/N junction leakage in thin selectively grown germanium-in-STI substrates
Eneman, Geert; Yang, Rui; Wang, Gang; De Jaeger, Brice; Loo, Roger; Claeys, Cor; Meuris, Marc; Heyns, Marc; Simoen, Eddy (2009) -
Process optimization of low temperature silicon nitride stressor layers for improvement of device performance for 45nm technology and below
Eyckens, Brenda; Collaert, Nadine; Schaekers, Marc; Sleeckx, Erik; Eneman, Geert; Verheyen, Peter; Rooyackers, Rita (2005) -
Thin SiGe strain-relaxed buffer layers: relaxation mechanism and integration in strained Si MOS-FETs
Caymax, Matty; Delhougne, Romain; Loo, Roger; Eneman, Geert; Verheyen, Peter; Ries, Michael; Luysberg, Martina (2005)