Browsing by Author "Caillat, Christian"
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Publication A low-power HKMG CMOS platform compatible with DRAM node 2x and beyond
Journal article2014, IEEE Transactions on Electron Devices, (61) 8, p.2935-2943Publication A new high-k/metal gate CMOS integration scheme (Diffusion and Gate Replacement) suppressing gate height asymmetry and compatible with high-thermal budget memory technologies
Proceedings paper2014, International Electron Devices Meeting - IEDM, 15/12/2014, p.772-775Publication Diffusion and gate replacement: a new gate-first high-k/metal gate CMOS integration scheme suppressing gate height symmetry
Journal article2016, IEEE Transactions on Electron Devices, (63) 1, p.265-271Publication Effect of interface states on 1T-FBRAM cell retention
Proceedings paper2012, IEEE International Reliability Physics Symposium - IRPS, 15/04/2012, p.MY-1Publication Endurance of one transistor floating body RAM on UTBOX SOI
Journal article2014, IEEE Transactions on Electron Devices, (61) 3, p.801-805Publication Floating body retention analysis for 1T-DRAM
Proceedings paper2013, SEMINATEC, 2/05/2013Publication I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration
Proceedings paper2015, International Conference on IC Design and Technology - ICICDT, 1/06/2015, p.1-4Publication Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors
Proceedings paper2013, 43rd European Solid-State Device Research Conference - ESSDERC, 16/09/2013, p.190-193Publication Impact of DRAM process flow on the performance of periphery devices for next generation mobile applications
Proceedings paper2011, 2nd International Workshop on Simulation and Modeling of Memory - IWSM2, 6/10/2011Publication Impact of generation centers on the retention time in 1T-FBRAM
Meeting abstract2012, 3rd International Workshop on Simulation and Modeling of Memory Devices - IWSMM, 5/10/2012Publication Insights in low frequency noise of advanced and high-mobility channel transistors
Proceedings paper2012, IEEE International Electron Devices Meeting - IEDM, 10/12/2012, p.28.7Publication Low-power DRAM-compatible replacement gate high-k/metal gate stacks
Journal article2013, Solid-State Electronics, 84, p.22-27Publication Low-power DRAM-compatible replacement gate high-k/metal gate stacks
Proceedings paper2012, 42nd European Solid-State Device Research Conference - ESSDERC, 17/09/2012, p.242-245Publication Ni(Pt) silicide with improved thermal stability for application in DRAM PERI or RMG devices
Meeting abstract2013, Materials for Advanced Metallization - MAM, 10/03/2013, p.189-190Publication Ni(Pt) silicide with improved thermal stability for application in DRAM periphery and replacement metal gate devices
Journal article2014, Microelectronic Engineering, 120, p.157-162Publication On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs
Proceedings paper2012, 42nd European Solid-State Device Research Conference - ESSDERC, 17/09/2012, p.338-341Publication On the variability of the low-frequency noise in UTBOX SOI nMOSFETs
Proceedings paper2012, Proceedings of the 27th Symposium on Microelectronics Technology and Devices - SBMicro, 30/08/2012, p.51-58Publication On the variability of the low-frequency noise in UTBOX SOI nMOSFETs
Journal article2013, Journal of Integrated Circuits and Systems, (8) 2, p.71-77Publication Optimized process simulation of USJ for HKMG DRAM periphery transistors
Proceedings paper2014, IEEE Workshop On Microelectronics And Electron Devices - WMED, 18/04/2014, p.1-4Publication Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM
Journal article2013, Solid-State Electronics, 90, p.149-154