Browsing by Author "Cho, Hag-Ju"
- Results Per Page
- Sort Options
Publication A 50nm high-k poly silicon gate stack with a buried SiGe channel
Proceedings paper2007, International Symposium on VLSI Technology, Systems and Applications, 23/04/2007Publication A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack
Proceedings paper2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.535-538Publication Achieving conduction band-edge effective work functions by La2O3 capping of hafnium silicates
Journal article2007-06, IEEE Electron Device Letters, (28) 6, p.486-488Publication Demonstration of metal-gated low Vt n-MOSFETs using a Poly-Si/TaN/Dy2O3/SiON gate stack with a scaled EOT value
Journal article2007, IEEE Electron Device Letters, (28) 7, p.656-658Publication DyScHfO as high-k gate dielectric: structural and electrical properties
Proceedings paper2007, Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS 3: New Materials, Processes and Equipment, 6/05/2007, p.113-120Publication Investigation on molybdenum and its conductive oxides as p-type metal gate candidates
Proceedings paper2007, Physics and Technology of High-k Dielectrics, 7/10/2007, p.575-583Publication Investigation on molybdenum and its conductive oxides as p-type metal gate candidates
Journal article2008, Journal of the Electrochemical Society, (155) 7, p.H481Publication Low VT CMOS using doped Hf-based oxides, TaC-based metals and laser-only anneal
Proceedings paper2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.49-52Publication Low VT metal-gate/high-k nMOSFETs - PBTI dependence and VT tune-ability on La/Dy-capping layer locations and laser annealing conditions
Publication Nitrogen profile and dielectric cap layer (Al2O3, Dy2O3, La2O3) engineering on Hf-silicate
Proceedings paper2007, IEEE International Conference on IC Design and Technology - ICICDT, 30/05/2007, p.114-116Publication Novel process to pattern selectively dual dielectric capping layers using soft-mask only
Proceedings paper2008, Symposium on VLSI Technology Digest of Technical Papers, 17/06/2008, p.44-45Publication Oxygen-vacancy-induced Vt shift in La-containing devices
Proceedings paper2007, Extended Abstracts of the International Conference on Solid State Devices and Materials - SSDM, 19/09/2007, p.372-373Publication Strain enhanced Low-VT CMOS featuring La/Al-doped HfSiO/TaC and 10ps invertor delay
Proceedings paper2008, Symposium on VLSI Technology Digest of Technical Papers, 17/06/2008, p.130-131Publication The impact of stacked cap layers on effective work function with HfSiON and SiON gate dielectrics
Journal article2008-07, IEEE Electron Device Letters, (29) 7, p.743-745Publication Understanding and prediction of EWF modulation induced by various dopants in the gate stack for a gate-first integration scheme
Proceedings paper2008, Symposium on VLSI Technology. Digest of Technical Papers, 17/06/2008, p.162-163