Browsing by Author "Claeys, C."
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Publication 60 MeV proton irradiation effects on NO-annealed and standard-oxide deep submicron MOSFETs
Oral presentation2001, RADECS; 10-14 September 2001; Grenoble, France.Publication A Low-Frequency Noise Study of Hot-Carrier Stressing Effects in Submicron Si p-MOSFETs
Oral presentation1995, 2nd ELEN Workshop; October 25-27, 1995; Grenoble, France.Publication A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs at 300K
Oral presentation2000, 1st Latin American Test Workshop; March 2000; Rio de Janeiro, Brasil.Publication A new technique to extract the oxide charge density at front and back interfaces of SOI NMOSFETs devices
Proceedings paper2001, XVI SBMicro. International Conference on Microelectronics and Packaging, 10/09/2001, p.23-27Publication Analysis of irradiation induced defects in silicon devices
Proceedings paper1995, RELECTRONIC '95. 9th Symposium on Quality and Reliability in Electronics; 16-18 Oct. 1995; Budapest, Hungary., p.329-34Publication Analysis of the back gate voltage on the LDD SOI NMOSFET series resistance
Oral presentation1999, ICMP; August 1999; Campinas, Brazil.Publication Assessment of radiation induced lattice damage in shallow trench isolation diodes irradiated by neutrons
Oral presentation2000, BIAMS - 6th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors; 12-16 November 2000; FukuoPublication Back gate voltage influence on the LDD SOI NMOSFET series resistance extraction from 150 to 300 K
Oral presentation1998, NATO Advanced Research Workshop on "Perspectives, Sciences and Technologies of Novel Silicon-on-Insulator Devices"; 12-15 OctobePublication Back gate voltage influence on the LDD SOI NMOSFET series resistance extraction from 150 to 300 K
Proceedings paper2000, Perspectives, Sciences and Technologies of Novel Silicon-on-Insulator Devices, 12/10/1998, p.187-193Publication Bulk defect induced low-frequency noise in n+-p silicon diodes
Journal article1998, IEEE Trans. Electron Devices, (45) 12, p.2528-2536Publication Carbon enhancement of SiO2 nucleation in buried oxide synthesis
Publication Characterisation of high-energy proton irradiation induced recombination centers in silicon
Proceedings paper1996, Proceedings of the 6th Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology - GADEST'95, 2/09/1995, p.371-376Publication Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM
Journal article2001, Physica B, 308, p.294-297Publication Comparison of the freeze-out effect in In and B doped n-MOSFETs in the range 4.2 - 300 K
Journal article1998, Journal de Physique IV, 8, p.3-3-AugPublication Comparison of the total dose and 60MeV proton-irradiation response of CMOS transistors operated at 4.2K
Oral presentation1999, RADECS '99; 13-17 September 1999; Abbaye de Fontevraud, France.Publication Critical study of the saturation drain voltage and the multiplication current in MOSFETs at liquid helium temperature
; Claeys, C.Proceedings paper2001, Proceedings of the 31st European Solid-State Device Research Conference, 11/09/2001, p.195-198Publication Current transients in almost-ideal Czochralski silicon p-n junction diodes
Journal article1999, Appl. Phys. Lett., (75) 21, p.3342-3344Publication DC and Noise Behaviour of Short-Chanenl SOI MOSFETs
Oral presentation1995, 2nd ELEN Workshop; October 25-27, 1995; Grenoble, France.Publication Defect analysis of n-type silicon strained layers
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