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Browsing by Author "De Roest, David"

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    A CAD-oriented analytical model for frequency-dependent series resistance and inductance of microstrip on-chip interconnect on silicon substrate

    Ymeri, Hasan
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    Nauwelaers, Bart  
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    Maex, Karen  
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    Vandenberghe, S.
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    De Roest, David  
    Journal article
    2002, Microprocessors and Microsystems, (26) 1, p.45-48
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    A high-reliable Cu/ULK integration scheme using Metal Hard Mask and Low-k capping film

    Travaly, Youssef
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    Tsutsue, M.
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    Ikeda, Atsushi
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    Verdonck, Patrick  
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    Tokei, Zsolt  
    Oral presentation
    2007, Advanced Metallization Conference: 17th Asian Session
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    A new approach for the calculation of line capacitances of two-layer IC interconnects

    Ymeri, Hasan
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    Nauwelaers, Bart  
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    Maex, Karen  
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    De Roest, David  
    Journal article
    2000, IEEE Microwave and Optical Technology Letters, (27) 5, p.297-302
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    A physics-based VLSI interconnect model including substrate and conductor skin effects

    Ymeri, H.
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    Nauwelaers, Bart  
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    Maex, Karen  
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    De Roest, David  
    Journal article
    2004, Semiconductor Science and Technology, (19) 3, p.516-518
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    Accurate analytic expressions for frequency-dependent inductance and resistance of single on-chip interconnects on conductive silicon Substrate

    Ymeri, Hasan
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    Nauwelaers, Bart  
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    Maex, Karen  
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    De Roest, David  
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    Vandenberghe, S.
    Journal article
    2002, Physics Letters A, (293) 3_4, p.195-198
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    Admittance matrix calculations of on-chip interconnects on lossy silicon substrate using multilayer Green's function

    Ymeri, Hasan
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    Nauwelaers, Bart  
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    Maex, Karen  
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    De Roest, David  
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    Vandenberghe, S.
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    Stucchi, Michele  
    Proceedings paper
    2001, Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2001. Digest of Papers, 12/09/2001, p.50-59
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    Advanced solutions for copper and low k technology

    Beyer, Gerald  
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    Baklanov, Mikhaïl
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    Brongersma, Sywert  
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    De Roest, David  
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    Donaton, R.
    Oral presentation
    2000, Semicon Europe; 2000; München, Germany.
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    CAD-oriented analytic formulas for self and mutual capacitance of interconnects on an Si-SiO2 substrate

    Ymeri, Hasan
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    Nauwelaers, Bart  
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    Maex, Karen  
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    Vandenberghe, S.
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    De Roest, David  
    ;
    Stucchi, Michele  
    Proceedings paper
    2001, Proceedings GAAS - European Gallium Arsenide and other Semiconductors Application Symposium, 24/09/2001
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    Characterization and integration in Cu damascene structures of AURORA, an inorganic low-k dielectric

    Alves Donaton, Ricardo
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    Coenegrachts, Bart  
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    Sleeckx, Erik  
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    Schaekers, Marc  
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    Sophie, Guus
    Proceedings paper
    2001, Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics, 23/04/2000, p.D5.14.1-D5.14-6
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    Characterization and integration of a new Si-O-C film deposited by CVD

    Alves Donaton, Ricardo
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    Struyf, Herbert  
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    Lepage, Muriel
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    Coenegrachts, Bart  
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    Stucchi, Michele  
    Proceedings paper
    2001, Advanced Metallization Conference 2000, 3/10/2000, p.595-601
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    Characterization and optimization of porogen based PECVD deposited extreme low-k materials as a function of UV-cure time

    Verdonck, Patrick  
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    De Roest, David  
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    Kaneko, Shinya
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    Caluwaerts, Rudy  
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    Tsuji, Naoto
    Journal article
    2007, Surface and Coatings Technology, (201) 22_23, p.9264-9268
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    Critical issues in the integration of Copper and low-k dielectrics

    Donaton, R. A.
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    Coenegrachts, Bart  
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    Maex, Karen  
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    Struyf, Herbert  
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    Vanhaelemeersch, Serge  
    Proceedings paper
    1999, Proceedings of the International Interconnect Technology Conference - IITC; San Francisco, CA, USA., p.262-264
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    Deposition and characterization of porogen based PECVD deposited and UV-cured extreme low-k materials

    Verdonck, Patrick  
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    De Roest, David  
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    Kaneko, Shinya
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    Tsuji, Naoto
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    Matsushita, Kiyohiro
    Proceedings paper
    2007, 16th European Conference on Chemical Vapor Deposition - EUROCVD, 16/09/2007
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    Dielectric reliability of 50nm half pitch structures in Aurora® LK

    Demuynck, Steven  
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    Kim, Honggun
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    Huffman, Craig
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    Darnon, Maxime
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    Struyf, Herbert  
    Journal article
    2009, Japanese Journal of Applied Physics, (48) 4, p.04C018
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    Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance

    Marsik, Premysl
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    Urbanowicz, Adam
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    Verdonck, Patrick  
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    De Roest, David  
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    Sprey, Hessel  
    Journal article
    2011, Thin Solid Films, (519) 11, p.3619-3626
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    Electrical characteristics of P-type bulk Si fin field-effect transistor using solid-source doping with 1-nm phosphosilicate glass

    Kikuchi, Yoshiaki  
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    Chiarella, Thomas  
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    De Roest, David  
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    Blanquart, Timothee  
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    De Keersgieter, An  
    Journal article
    2016, IEEE Electron Device Letters, (37) 9, p.1084-1087
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    Electrical characterization of low-k dielectrics and copper interconnects

    De Roest, David  
    PHD thesis
    2003-06
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    Exploration of a low-temperature PEALD technology to trim and smooth 193i photoresist

    Lazzarino, Frederic  
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    Paolillo, Sara  
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    Peter, Antony  
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    De Roest, David  
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    Seong, TaeGeun
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    Wu, Yizhi
    Proceedings paper
    2017, Advances in Patterning Materials and Processes XXXIV, 26/02/2017, p.101460K
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    Fast and accurate analysis of the multiconductor interconnects

    Ymeri, Hasan
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    Nauwelaers, Bart  
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    Maex, Karen  
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    De Roest, David  
    Journal article
    2001, Microelectronic Engineering, (55) 1_4, p.37-42
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    Frequency-dependent expressions for inductance and resistance of microstrip line on silicon substrate

    Ymeri, Hasan
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    Nauwelaers, Bart  
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    Maex, Karen  
    ;
    De Roest, David  
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    Vandenberghe, S.
    Journal article
    2002, Microwave and Optical Technology Letters, (33) 5, p.349-352
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