Browsing by Author "Depas, Michel"
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Publication A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides
Proceedings paper1995, International Electron Devices Meeting. Technical Digest, 10/12/1995, p.863-866Publication Breakdown and defect generation in ultra-thin gate oxide
Journal article1996, Journal of Applied Physics, (80) 1, p.382-386Publication Breakdown and instability of 3 nm Gate Oxide
Meeting abstract1995, 26th IEEE Semiconductor Interface Specialists' Conference, 7/12/1995Publication Correlation between grown-in silicon substrate defects and silicon gate oxide breakdown characteristics
Meeting abstract1996, Belgische Natuurkundige Vereniging. Algemene Wetenschappelijke Vergadering, 6/06/1996Publication Critical processes for ultra-thin gate oxide integrity
; ; ; Publication Defect density of ultra-thin gate oxides grown by conventional oxidation processes
Proceedings paper1994, Proceedings of the 2nd International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS, 19/09/1994, p.319-323Publication Definition of dielectric breakdown for ultra thin (<2nm) gate oxides
Journal article1997, Solid-State Electronics, (41) 5, p.725-728Publication Determination of tunnelling parameters in ultra-thin oxide poly-Si/SiO2/Si structures
Journal article1995, Solid-State Electronics, (38) 8, p.1465-1471Publication Effect of Cl in gate oxidation
Proceedings paper1997, Science and Technology of Semiconductor Surface Preparation, 1/04/1997, p.89-100Publication Effect of Cl in gate oxidation
Proceedings paper1997, Materials Reliability in Microelectronics VII, 31/03/1997, p.149-160Publication Effect of Fe contamination on quality of poly silicon gate structures
; ; ; ; Publication Environmentally-friendly chlorine during oxidation
; ; ; Publication Evaluation of different chlorine sources for gate oxidation
Proceedings paper1995, 7th Annual Dielectrics and CVD Metallization Symposium, 6/02/1995, p.211-239Publication Gate voltage dependence of reliability for ultra-thin oxides
Proceedings paper1997, Proceedings of the Solid State Devices and Materials Conference - SSDM, 16/09/1997, p.90-91Publication Growth and reliability of 3nm N2O gate oxide
Oral presentation1996, 27th IEEE Semiconductor Interface Specialists Conference (SISC); December 5-7, 1996; San Diego, Calif., USA.Publication Growth kinetics and electrical characteristics of ultra-thin pyrogenetic silicon oxide
Journal article1995, Microelectronic Engineering, (28) 1_4, p.125-128Publication Impact of organic contamination on gate oxide integrity
Proceedings paper1998, 44th Annual Meeting of Inst. Environmental Science and Technology, 26/04/1998, p.87-93Publication Impact of organic contamination on thin gate oxide quality
Journal article1998, Japanese Journal of Applied Physics. Part 1: Regular Papers, (37) 9A, p.4649-4655Publication Influence of boron diffusion on ultra-thin oxides
Proceedings paper1997, Materials Reliability in Microelectronics VII, 31/03/1997, p.101-106Publication Interpretation of spectroscopic ellipsometry measurements of ultrathin dielectric layers on silicon: impact of accuracy of the silicon optical constants
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