Browsing by Author "Gao, Teng"
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Publication Integrating a hydrogen silsesquioxane spin-on dielectric in a quarter micron technology
Proceedings paper1997, 3rd International Dielectrics for ULSI Multilevel Interconnection Conference - DUMIC, 10/02/1997, p.310-316Publication Integration HSQ into direct-on-metal approach for 0.25µm technology
Oral presentation1999, European Workshop Materials for Advanced Metallization; March 8-10, 1999; Oostende, Belgium.Publication Integration of HSQ in the direct-on-metal approach for 0.25-μm technology
Journal article2000, Microelectronic Engineering, (50) 1_4, p.349-355Publication Integration of non-etchback low-k methy silsequioxane polymer using electron beam cure
Proceedings paper1999, Advanced Metallization Conference in 1998 - AMC 1998, 6/10/1998, p.491-497Publication Integration of the 3MS low-k CVD material in a 0.18 μm Cu single damascene process
Proceedings paper2000, Advanced Metallization Conference 1999 - AMC 1999, 28/09/1999, p.33-39Publication Integration of the 3MS low-k CVD material in a 0.18µm Cu single damascene process
Oral presentation1999, Advanced Metallization Conference; September 28-30, 1999; Orlando, FL, USA.Publication Integration of unlanded via in a non-etchback SOG direct-on-metal approach in 0.25 micron CMOS process
Proceedings paper1998, Proceedings of the IEEE 1998 International Interconnect Technology Conference - IITC, 1/06/1998, p.45-47Publication Integration of unlanded via in a non-etchback SOG direct-on-metal approach in 0.25 micron CMOS process
Oral presentation1998, Advanced Metallization ConferencePublication Low-k materials etch and strip optimization for sub 0.25µm technology
Proceedings paper1999, Proceedings of the International Interconnect Technology Conference - IITC; San Francisco, CA, USA., p.53-55Publication Process optimization and integration of trimethylsilane deposited a-SiC:H and SiOC:H dielectric thin films for damascene processing
Oral presentation2000, MRS Spring Meeting 2000. Symposium D: Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics; 2Publication Process optimization and integration of trimethylsilane-deposited a-SiC:H and a-SiCO:H dielectric thin films for damascene processing
Journal article2003, Journal of the Electrochemical Society, (150) 7, p.G404-G411Publication Reduction of the premetal dielectric thermal budget for a 0.35 μm technology
Proceedings paper1996, Proceedings of the 13th International VLSI Multilevel Interconnection Conference - VMIC, 18/06/1996, p.55-57Publication The evaluation and the inegration of low-k organic spin-on materials in a non-etchback interconnect process
Oral presentation1996, PLANAR 96; June 17, 1996; Santa Clara, Calif., USA.Publication The integration of low k hydrogen silsesquioxanes (HSQ) in sub 0.35µm processes
Oral presentation1998, 3rd International Symposium on Low and High Dielectric Constant Materials: Materials Science, Processing and Reliability Issues;