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Browsing by Author "Gilbert, Matthieu"

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    3D site specific sample preparation and analysis of 3D devices (Finfets) by atom probe tomography

    Kambham, Ajay Kumar
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    Kumar, Arul
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    Gilbert, Matthieu
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    Vandervorst, Wilfried  
    Oral presentation
    2012, 53rd International Field Emission Symposium - IFES
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    3D site specific sample preparation and analysis of 3D devices (FinFETs) by atom probe tomography

    Vandervorst, Wilfried  
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    Kambham, Ajay Kumar
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    Kumar, Arul
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    Gilbert, Matthieu
    Journal article
    2013, Ultramicroscopy, (132) 1, p.69-69
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    3D-Atomprobe : facts, artifacts and applications in semiconductors

    Vandervorst, Wilfried  
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    Koelling, Sebastian
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    Gilbert, Matthieu
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    Kambham, Ajay Kumar
    Proceedings paper
    2010, The International Symposium on SIMS and Related Techniques Based on Ion-Solid Interactions at Seikei University - SISS-12, 10/06/2010
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    3D-doping in Finfets and nanowires : fabrication and metrology challenges and solutions

    Vandervorst, Wilfried  
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    Schulze, Andreas
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    Eyben, Pierre  
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    Zschaetzsch, Gerd
    Oral presentation
    2011, E-MRS Symposium I: Transport in Si-based Nanodevices
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    Application of atom probe tomography to epitaxial layers

    Kumar, Arul
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    Gilbert, Matthieu
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    Kambham, Ajay Kumar
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    Gencarelli, Federica
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    Loo, Roger  
    Proceedings paper
    2013, 8th International Conference on Silicon Epitaxy and Heterostructures - ICSI-8, 2/06/2013, p.79-80
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    Atom probe analysis of a 3D-finfet with high-k metal gate

    Gilbert, Matthieu
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    Vandervorst, Wilfried  
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    Koelling, Sebastian
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    Kambham, Ajay Kumar
    Journal article
    2011, Ultramicroscopy, (111) 6, p.530-534
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    Atom probe for FinFET dopant characterization

    Kambham, Ajay Kumar
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    Mody, Jay
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    Gilbert, Matthieu
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    Koelling, Sebastian
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    Vandervorst, Wilfried  
    Meeting abstract
    2010, 52nd International Field Emission Symposium - IFES, 5/07/2010
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    Atom probe tomography for 3D-dopant analysis in FinFET devices

    Kambham, Ajay Kumar
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    Zschaetzsch, Gerd
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    Sasaki, Yuichiro
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    Togo, Mitsuhiro
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    Horiguchi, Naoto  
    Proceedings paper
    2012, Symposium on VLSI Technology - VLSIT, 12/06/2012, p.77-78
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    Atom probe tomography for advanced semiconductor metrology

    Gilbert, Matthieu
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    Kambham, Ajay Kumar
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    Kumar, Arul
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    Vandervorst, Wilfried  
    Meeting abstract
    2012, International Field Emission Symposium- IFES, 21/05/2012
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    Atom-probe for arsenic implant doped FinFET characterization

    Kambham, Ajay Kumar
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    Kumar, Arul
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    Gilbert, Matthieu
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    Vandervorst, Wilfried  
    Oral presentation
    2012, 53rd International Field Emmission Symposium
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    Atomic insight into relaxation mechanism of Ge(1-x)Sn(x) using atom probe tomography

    Kumar, Arul
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    Kambham, Ajay Kumar
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    Gilbert, Matthieu
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    Vandervorst, Wilfried  
    Meeting abstract
    2012, E-MRS Spring Meeting Symposium A: Advanced Silicon Materials Research for Electronic and Photovoltaic Applications III, 14/05/2012
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    Atomic insight of Ge(1-x)Sn(x) using atom probe tomography

    Kumar, Arul
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    Gencarelli, Federica
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    Vincent, Benjamin  
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    Kambham, Ajay Kumar
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    Gilbert, Matthieu
    Proceedings paper
    2012, 53rd International Field Emission Symposium - IFES, 21/05/2012
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    Conformal doping for FINFET's: a fabrication and metrology challenge

    Vandervorst, Wilfried  
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    Everaert, Jean-Luc
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    Rosseel, Erik  
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    Jurczak, Gosia  
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    Hoffmann, Thomas Y.
    Oral presentation
    2008, Stanford & Tohoku University Joint Open Workshop on 3D Transistor and its Applications
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    Conformal doping of FINFET's: a fabrication and metrology challenge

    Vandervorst, Wilfried  
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    Everaert, Jean-Luc
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    Rosseel, Erik  
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    Jurczak, Gosia  
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    Hoffmann, Thomas
    Proceedings paper
    2008, 17th International Conference in Ion Implantation Technology - IIT, 8/06/2008, p.449-456
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    Counting dopants/atoms in 2D/3D nanoscale structures

    Vandervorst, Wilfried  
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    Eyben, Pierre  
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    Schulze, Andreas
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    Kambham, Ajay Kumar
    Oral presentation
    2010, The X International Conference on Nanostructured Materials - NANO-2010
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    Determination par EDS de l'épaisseur et de la composition de films minces multicouches pour applications nanoélectroniques

    Franquet, Alexis  
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    Conard, Thierry  
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    Gilbert, Matthieu
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    Hantschel, Thomas  
    Meeting abstract
    2012, 5ème Conférence Francophone sur les Spectroscopies d'Electrons - ELSPEC, 22/05/2012
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    Direct imaging of 3D atomic-scale dopant-defect clustering processes in ion-implanted silicon

    Koelling, Sebastian
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    Richard, Olivier  
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    Bender, Hugo  
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    Uematsu, M.
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    Schulze, Andreas
    Journal article
    2013, Nano Letters, (13) 6, p.2458-2462
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    Dopant and carrier profiling for 3D-device architectures

    Mody, Jay
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    Kambham, Ajay Kumar
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    Zschaetzsch, Gerd
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    Chiarella, Thomas  
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    Collaert, Nadine  
    Proceedings paper
    2011, International Workshop on Junction Technology, 7/06/2011
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    Dopant and carrier profiling in FinFET-based devices with sub-nanometer resolution

    Mody, Jay
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    Kambham, Ajay Kumar
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    Zschaetzsch, Gerd
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    Schatzer, Philipp
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    Chiarella, Thomas  
    Proceedings paper
    2010, IEEE Symposium on VLSI Technology, 15/06/2010, p.195-196
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    Dopant/carrier profiling for 3D-structures

    Vandervorst, Wilfried  
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    Schulze, Andreas
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    Kambham, Ajay Kumar
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    Mody, Jay
    ;
    Gilbert, Matthieu
    Journal article
    2014, Physica Status Solidi C, (11) 1, p.121-129
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