Browsing by Author "Grasser, Tibor"
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Publication 6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT
Proceedings paper2010, IEEE International Electron Devices Meeting - IEDM, 6/12/2010, p.70-73Publication A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
Journal article2018, Microelectronics Reliability, 81, p.186-194Publication A Compact Physics Analytical Model for Hot-Carrier Degradation
Proceedings paper2020, IEEE International Reliability Physics Symposium (IRPS), APR 28-MAY 30, 2020Publication A comprehensive model for correlated drain and gate current fluctuations
Proceedings paper2013, 16th International Workshop on Computational Electronics - IWCE, 4/06/2013, p.46-47Publication A model for switching traps in amorphous oxides
Proceedings paper2009, International Conference on Simulation of Semiconductor processes and Devices - SISPAD, 9/09/2009, p.159-162Publication A rigorous study of measurement techniques for negative bias temperature instability
Proceedings paper2007-10, IEEE International Integrated Reliability Workshop Final Report - IIRW, 15/10/2007, p.6-11Publication A two-stage model for negative bias temperature instability
Proceedings paper2009-04, 47th Annual IEEE International Reliability Physics Symposium, 26/04/2009, p.33-44Publication Ab initio treatment of silicon-hydrogen bond rupture at Si/SiO2 interfaces
Journal article2019, Physical Review B, (100) 19, p.195302Publication Accelerated Capture and Emission (ACE) measurement pattern for efficient BTI characterization and modeling
; ; ; ; Proceedings paper2019, 2019 IRPS IEEE International Reliability Physics Symposium - IRPS, 31/03/2019, p.1-7Publication Advanced characterization of oxide traps: the dynamic time-dependent defect spectroscopy
Publication Advanced modeling of oxide defects for random telegraph noise
Proceedings paper2011-06, 21st International Conference on Noise and Fluctuations - ICNF, 12/06/2011, p.204-207Publication An energy-level perspective of bias temperature instability
Proceedings paper2008-04, 46th Annual IEEE International Reliability Physics Symposium - IRPS, 27/04/2008, p.28-38Publication Analysis of the features of hot-carrier degradation in FinFETs
Journal article2018-10, Semiconductors, (52) 10, p.1298-1302Publication Analytic modeling of the bias temperature instability using capture/emission time maps
Publication Analytical solution of the switching trap model for negative bias temperature stress
Proceedings paper2009, IEEE Integrated Reliability Workshop - IIRW, 18/10/2009Publication Applicability of charge pumping on Germanium MOSFETs
Journal article2008, IEEE Electron Device Letters, (29) 12, p.1364-1366Publication Assessing reliability of nano-scaled CMOS technologies one defect at a time
Proceedings paper2012, IEEE International Conference on Emerging Electronics - ICEE, 15/12/2012Publication Atomistic approach to variability of bias-temperature instability in circuit simulations
Proceedings paper2011-04, IEEE International Reliability Physics Symposium - IRPS, 10/04/2011, p.915-919Publication 'Atomistic' simulation of RTS amplitudes due to single and multiple charged defect states and their interactions
Proceedings paper2010-10, IEEE International Integrated Reliability Workshop - IIRW, 17/10/2010, p.76-79Publication Bi-modal variability of nFinFET characteristics during hot-carrier stress: a modeling approach
Journal article2019, IEEE Electron Device Letters, (40) 10, p.1579-1582