Browsing by Author "Guo, Weiming"

650 V p-GaN gate power HEMTs on 200 mm engineered substrates

An InGaAs/InP quantum well FinFET using the replacement fin process integrated in an RMG flow on 300mm Si substrates

An ultra-short InP nanowire laser monolithic integrated on (001) silicon substrate

Anisotropic relaxation behavior of InGaAs/GaAs selectively grown in narrow trenches on (001) Si substrates

Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI

Composition variation of In1-xGaxAs epitaxially grown in narrow trenches on Si

Defect formation in III-V fin grown by aspect ratio trapping technique: a first-principles study

Direct three-dimensional observation of the conduction in poly-Si and In1-xGaxAs 3D NAND vertical channels

Epitaxial growth and characterization of P-GaN gated HEMT on compliant poly-AlN substrate for e-mode power devices

Epitaxial III-V/Si devices for silicon photonics

Epitaxy of III-V based channels on Si and transistor integration for 12-nm node CMOS

Evolution of (001) and (111) facets for selective epitaxial growth inside Submicron trenches

Feasibility of InxGa1-xAs high mobility channel for 3-D NAND memory

First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping

First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping

GaN-on-SOI: Monolithically integrated all GaN ICs for power conversion

Growth rate for the SEG of III-V compounds inside submicron STI trenches on Si (001) substrates by MOVPE: modeling and experiments

Heteroepitaxy of III-V compound semiconductors on Si for logic applications: selective area epitaxy in shallow trench isolation structures vs direct epitaxy mediated by strain relaxed buffers

Heteroepitaxy of III-V compound semiconductors on Si for logic applications: Selective area epitaxy in shallow trench isolation structures vs direct epitaxy mediated by strain relaxed buffers

Heteroepitaxy of InP on Si(001) in sub-50nm width trenches by Selective-Area Metalorganic Vapor-Phase Epitaxy: the role of the nucleation layer and the recess engineering