Browsing by Author "Haukka, S."
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Publication Alternative gate insulator materials for future generation MOSFETs
Oral presentation2001, International Forum on Semiconductor Technology - IFST; 7-8 March 2001; Antwerpen, Belgium.Publication Atomic layer deposition of hafnium silicate from HfCl4, SiCl4, and H2O
Journal article2007, Electrochemical and Solid-State Letters, (10) 5, p.H149-H152Publication Characterisation of AlCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties
Journal article2002, Journal of Non-Crystalline Solids, (303) 1, p.123-133Publication Characterization of ALCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties
Oral presentation2001, Symposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.Publication Crystallization behaviour of ZrO2/Al2O3-based high-k gate stacks
Oral presentation2001, Symposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.Publication Enhancement of ALCVD(TM) TiN growth on Si-O-C and a-SiC:H films by O2-based plasma treatments
Journal article2002, Microelectronic Engineering, (60) 1_2, p.59-69Publication High k dielectric materials prepared by atomic layer CVD
Oral presentation2001, 12th INFOS Conference - Insulating Films on Semiconductors; June 2001; Udine, Italy.Publication In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction
Journal article2001, Microelectronics Reliability, (41) 7, p.995-998Publication Miscibility of amorphous ZrO2-Al2O3 binary alloy
Journal article2002, Applied Physics Letters, (80) 13, p.2374-2376Publication MONA - merging optics and nanotechnologies: the nanophotonics technology roadmap
Proceedings paper2007-04, Proceedings of the European Conference on Integrated Optics - ECIO 7), 25/04/2007, p.paper nr WF1 (3Publication Properties of TiN thin films deposited by ALCVD as barriers for Cu metallization
Proceedings paper2001, Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics, 23/04/2000, p.D6.5.1-D6.5.6Publication Properties of TiN thin films deposited by ALCVD as barriers for Cu metallization
Oral presentation2000, MRS Spring Meeting 2000. Symposium D: Materials, Technology, and Reliability for Advanced Interconnects and Low-k DielectricsPublication Stabilization of amorphous structures in ALCVD high-k oxide layers
Oral presentation2001, IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference onPublication Thermostability of amorphous zirconium aluminate high-K layers
;Zhao, Chao; ;Young, Edward; ;Roebben, G. ;Haukka, S.Journal article2002, Journal of Non-Crystalline Solids, (303) 1, p.144-149Publication Trap-assisted tunneling in high permittivity gate dielectric stacks
Journal article2000, J. Appl. Physics, (87) 12, p.8615-8620