Browsing by Author "Ji, Z."

A single device based Voltage Step Stress (VSS) technique for fast reliability screening

A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias

AC NBTI of Ge pMOSFETs: impact of energy alternating defects on lifetime prediction

An assessment of the mobility degradation induced by remote charge scattering

An investigation of field reduction effect on NBTI parameter characterization and lifetime prediction using a constant field stress method

Defect loss: a new concept for reliability of MOSFETs

Development of a technique for characterizing bias temperature unstability-induced device-to-device variation at SRAM-relevant conditions

Dominant layer for stress-induced positive charges in Hf-based gate stacks

Energy distribution of positive charges in high-k dielectric

Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM

Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM ( a-VMCO) by RTN and CVS techniques for memory window improvement

Insights into the effect of TiN thickness scaling on DC and AC NBTI characteristics in replacement metal gate pMOSFETs

Interaction between hot carrier aging and PBTI degradation in nMOSFETs: characterization, modelling and lifetime prediction

Interface states beyond band gap and their impact on charge carrier mobility in MOSFETs

Investigation of preexisting and generated defects in nonfilamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution

Key issues and techniques for characterizing time-dependent device-to-device variation of SRAM

Negative bias temperature instability lifetime prediction: problems and solutions

New insights into defect loss, slowdown, and device lifetime enhancement

New insights into defect loss, slowdown, and device lifetime enhancement

On the activation and passivation of precursors for process-induced positive charges in Hf-dielectric stacks