Browsing by Author "Jiang, Sijia"

6.1 family: the next generation of III-V semiconductors for advanced CMOS applications: epitaxial growth and passivation challenges

Defect distribution in InP epitaxially grown in nano-trenches on off-axis Si substrates

Defect formation in III-V fin grown by aspect ratio trapping technique: a first-principles study

Evolution of (001) and (111) facets for selective epitaxial growth inside Submicron trenches

First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping

First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping

Growth rate for the SEG of III-V compounds inside submicron STI trenches on Si (001) substrates by MOVPE: modeling and experiments

Heteroepitaxy of III-V compound semiconductors on Si for logic applications: Selective area epitaxy in shallow trench isolation structures vs direct epitaxy mediated by strain relaxed buffers

Heteroepitaxy of III-V compound semiconductors on Si for logic applications: selective area epitaxy in shallow trench isolation structures vs direct epitaxy mediated by strain relaxed buffers

Heteroepitaxy of InP on Si(001) in sub-50nm width trenches by Selective-Area Metalorganic Vapor-Phase Epitaxy: the role of the nucleation layer and the recess engineering

Influence of chemical treatments on selective epitaxial growth of InP in STI nano-trenches on Si (001) substrates

Influence of trench width on III-V nucleation during InP selective area growth on pattern Si(001) substrate

Influence of trench width on III-V nucleation during InP selective area growth on patterned Si(001) substrates

Monolithic integration of Ge and III-V compound semiconductors on 300mm Si for CMOS

Monolithic integration of III-V semiconductors by selective area growth on Si(001) substrate: epitaxy challenges & applications

N-type and p-type ultra shallow junctions by atomic layer epitaxy and laser anneal

Nucleation behavior of III/V crystal selectively grown inside nano-trenches: the influence of trench width

Selective area growth of III/V compounds on Si substrates using metal-organic vapor phase epitaxy

Selective area growth of InP in shallow trench isolation (STI) on large scale Si(001) wafer using defect confinement technique

Selective-area metal organic vapor-phase epitaxy of InGaAs/InP heterostructures on Si for advanced CMOS devices