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Browsing by Author "Lisoni, Judit"

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    A highly reliable 3-dimensional integrated SBT ferroelectric capacitor enabling FeRAM scaling

    Goux, Ludovic  
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    Russo, G.
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    Menou, N.
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    Lisoni, Judit
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    Schwitters, M.
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    Paraschiv, Vasile  
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    Maes, David
    Journal article
    2005-04, IEEE Trans. Electron Devices, (52) 4, p.447-453
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    A novel multilayer inter-gate dielectric enabling up To 18V program / erase window for planar NAND flash

    Breuil, Laurent  
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    Lisoni, Judit
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    Blomme, Pieter  
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    Van den Bosch, Geert  
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    Van Houdt, Jan  
    Proceedings paper
    2013-05, 5th IEEE International Memory Workshop - IMW, 26/05/2013, p.68-71
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    Analysis of performance/variability trade-off in Macaroni-type 3-D NAND Memory

    Congedo, Gabriele
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    Arreghini, Antonio  
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    Liu, Lifang
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    Capogreco, Elena  
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    Lisoni, Judit
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    Huet, Karim
    Proceedings paper
    2014, IEEE 6th International Memory Workshop, 18/05/2014, p.123-126
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    Atomic layer deposition of scandium-based oxides

    Nyns, Laura  
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    Lisoni, Judit
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    Van den Bosch, Geert  
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    Van Elshocht, Sven  
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    Van Houdt, Jan  
    Meeting abstract
    2013, E-MRS 2013 Spring Meeting, 27/05/2013, p.N.IV 4
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    Atomic layer deposition of scandium-based oxides

    Nyns, Laura  
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    Lisoni, Judit
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    Van den Bosch, Geert  
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    Van Elshocht, Sven  
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    Van Houdt, Jan  
    Journal article
    2014, Physica Status Solidi A, (211) 2, p.409-415
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    Atomic layer deposition of scandium-based oxides

    Nyns, Laura  
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    Lisoni, Judit
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    Van den Bosch, Geert  
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    Van Elshocht, Sven  
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    Van Houdt, Jan  
    Oral presentation
    2013, 9th International Nanotechnology Conference on Communication and Cooperation - INC9
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    Bipolar switching characteristics and scalability in NiO layers made by thermal oxidation of Ni

    Goux, Ludovic  
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    Polspoel, Wouter
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    Lisoni, Judit
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    Chen, Yangyin  
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    Pantisano, Luigi
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    Wang, Xin Peng
    Journal article
    2010, Journal of the Electrochemical Society, (157) 8, p.G187-G192
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    C2H4-based plasma-assisted CD shrink and contact patterning for RRAM application

    Milenin, Alexey  
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    Lisoni, Judit
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    Jossart, Nico  
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    Jurczak, Gosia  
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    Struyf, Herbert  
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    Shamiryan, Denis
    Proceedings paper
    2010, Advanced Interconnects and Chemical Planarization for Micro- and Nanoelectronics, 5/04/2010, p.F04.09
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    Characterizing grain size and defect energy distribution in vertical SONOS poly-Si channels by means of a resistive network model

    Degraeve, Robin  
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    Toledano Luque, Maria
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    Arreghini, Antonio  
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    Tang, Baojun
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    Capogreco, Elena  
    Proceedings paper
    2013, International Electron Devices Meeting - IEDM, 9/12/2013, p.558-561
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    Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

    Goux, Ludovic  
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    Lisoni, Judit
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    Jurczak, Gosia  
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    Wouters, Dirk
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    Courtade, Lorene
    Journal article
    2010, Journal of Applied Physics, (107) 2, p.24512
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    Composition control and ferroelectric properties of sidewall Sr0.8Bi2.2Ta2O9 in integrated 3-Dimensional ferroelectric capacitors

    Goux, Ludovic  
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    Lisoni, Judit
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    Schwitters, Michael
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    Paraschiv, Vasile  
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    Maes, D.
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    Haspeslagh, Luc  
    Proceedings paper
    2005, Proceedings 1st International Conference on Memory Technology and Design, 21/05/2005, p.163-166
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    Composition control and ferrolectric properties of sidewalls in three-dimensional SrBi2Ta2O9-based ferroelectric capacitors

    Goux, Ludovic  
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    Lisoni, Judit
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    Schwitters, Michael
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    Paraschiv, Vasile  
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    Maes, David
    Journal article
    2005-09, Journal of Applied Physics, (98) 5, p.054507-1-054507-7
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    Defects characterization of hybrid floating gate/ inter-gate dielectric interface in flash memory

    Zahid, Mohammed
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    Degraeve, Robin  
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    Tang, Baojun
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    Lisoni, Judit
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    Van den Bosch, Geert  
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    Van Houdt, Jan  
    Proceedings paper
    2014, International Reliability Physics Symposium - IRPS, 1/06/2014, p.2E-3.1-2E-3.5
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    Degradation of the reset switching during endurance testing of a phase-change line cell

    Goux, Ludovic  
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    Tio Castro, David
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    Hurkx, Fred
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    Lisoni, Judit
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    Delhougne, Romain  
    Journal article
    2009, IEEE Transactions on Electron Devices, (56) 2, p.354-358
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    Deposition of SBT and PZT thin films for FERAM application

    Everaerts, Jurgen
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    Johnson, Jo
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    Bartic, Andrei
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    Kaczer, Ben  
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    Lisoni, Judit
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    Vander Meeren, Hans
    Oral presentation
    2001, Workshop: Journées des Couches Ferroelectrectriques - JCF; 26-27 November 2001; Maubeuge, France.
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    Developing a conductive oxide barrier for ferroelectric integration

    Johnson, Jo
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    Lisoni, Judit
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    Wouters, Dirk
    Journal article
    2003, Microelectronic Engineering, (70) 2_4, p.377-383
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    Direct three-dimensional observation of the conduction in poly-Si and In1-xGaxAs 3D NAND vertical channels

    Celano, Umberto  
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    Capogreco, Elena  
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    Lisoni, Judit
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    Arreghini, Antonio  
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    Kunert, Bernardette  
    Proceedings paper
    2016, IEEE Symposium on VLSI Technology, 14/06/2016, p.192-193
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    Effects of voltage cycling on polarization and reliability of 3D SBT ferroelectric capacitors integrated in 0.18um CMOS technology

    Wouters, Dirk
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    Goux, Ludovic  
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    Lisoni, Judit
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    Maes, David
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    Vander Meeren, Hans
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    Paraschiv, Vasile  
    Proceedings paper
    2005, Extended Abstracts of the International Conference on Solid State Devices and Materials, 12/09/2005, p.640-641
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    Electrical and physical characterization of Polycrystalline III-V compounds

    Capogreco, Elena  
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    Lisoni, Judit
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    Merckling, Clement  
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    Numata, Toshinori
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    Arreghini, Antonio  
    Proceedings paper
    2014, IEEE Semiconductor Interfaces Specialist Conference - SISC, 10/12/2014
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    Enhanced oxidation of TiAIN barriers integrated in three dimensional ferroelectric capacitor structures

    Lisoni, Judit
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    Johnson, Jo
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    Goux, Ludovic  
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    Paraschiv, Vasile  
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    Maes, David
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    Vander Meeren, Hans
    Journal article
    2007-01, Journal of Applied Physics, (101) 1, p.14908
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