Browsing by Author "Lucas, Kevin"
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Publication 100-nm generation contact patterning by low temperature 193-nm resist reflow process
Proceedings paper2002, Advances in Resist Technology and Processing XIX, 4/03/2002, p.631-642Publication 193-nm contact photoresist reflow feasibility study
Proceedings paper2001, Advances in Resist Technology and Processing XVIII, 26/02/2001, p.725-737Publication A fast triple patterning solution with fix guidance
Proceedings paper2014, Design-Process-Technology Co-optimization for Manufacturability VIII, 23/02/2014, p.90530APublication Accurate models for EUV simulation and their use for design correction
Proceedings paper2009, International Symposium on Extreme Ultraviolet Lithography, 18/10/2009Publication ArF lithography options for 100-nm technologies
Proceedings paper2001, Optical Microlithography XIV, 27/02/2001, p.179-190Publication ArF lithography options for 100nm technologies
Journal article2001, Semiconductor Fabtech, 14, p.157-165Publication Binary modeling method to check the sub-resolution assist features (SRAFs) printability
Proceedings paper2012, Optical Microlithography XXV, 12/02/2012, p.83261DPublication Checking design conformance and optimizing manufacturability using automated double-patterning decomposition
Publication Comparisons of 9% versus 6% transmission attenuated phase shift mask for the 65nm device node
Publication Design compliance for Spacer Is Dielectric (SID) patterning
Proceedings paper2012, Optical Microlithography XXV, 12/02/2012, p.83260DPublication Double patterning at NA 0.33 versus high-NA single exposure in EUV lithography: an imaging comparison
Proceedings paper2018, Extreme Ultraviolet (EUV) Lithography IX, 26/02/2018, p.105830OPublication Double patterning OPC and design for 22nm to 16nm device nodes
Publication Double-patterning interactions with wafer processing, optical proximity correction, and physical design flows
Publication EDA perspective on manufacturable DPT solutions
Oral presentation2010, 7th Annual LithoVision Technical SymposiumPublication EUV modeling accruracy and integration requirements for the 16nm node
Publication Experimental validation of rigorous, 3D profile models for negative-tone develop resists
Publication Experimental validation of stochastic modeling for negative-tone develop EUV resist
Proceedings paper2015, Extreme Ultraviolet (EUV) Lithography VI, 22/02/2015, p.942223Publication High-NA ArF lithography for 70-nm technologies
Proceedings paper2002, Optical Microlithography XV, 5/03/2002, p.1613-1624Publication Interactions of double patterning technology with wafer processing, OPC and design flows
Publication Low-temperature 193nm resist reflow process for 100 nm generation contact patterning
Proceedings paper2001, Lithography for Semiconductor Manufacturing II, 30/05/2001, p.396-407