Browsing by Author "Maes, David"
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Publication A highly reliable 3-dimensional integrated SBT ferroelectric capacitor enabling FeRAM scaling
; ; Maes, DavidJournal article2005-04, IEEE Trans. Electron Devices, (52) 4, p.447-453Publication CMOS-based sensors and actuators
Proceedings paper1998, Proceedings of the 11th Annual IEEE International ASIC Conference, 13/09/1998, p.393-397Publication CMOS-based transducers
Proceedings paper1998, Micro System Technologies 98 - 6th International Conference on Micro Electro, Opto, Mechanical Systems and Components, 1/12/1998, p.367-372Publication Composition control and ferrolectric properties of sidewalls in three-dimensional SrBi2Ta2O9-based ferroelectric capacitors
Journal article2005-09, Journal of Applied Physics, (98) 5, p.054507-1-054507-7Publication Effects of voltage cycling on polarization and reliability of 3D SBT ferroelectric capacitors integrated in 0.18um CMOS technology
Proceedings paper2005, Extended Abstracts of the International Conference on Solid State Devices and Materials, 12/09/2005, p.640-641Publication Enhanced oxidation of TiAIN barriers integrated in three dimensional ferroelectric capacitor structures
Journal article2007-01, Journal of Applied Physics, (101) 1, p.14908Publication Excellent reliability properties of 0.81mm2 integrated SBT fecap's with 3-D structure
Oral presentation2005, 7th International Symposium on Integrated FerroelectricsPublication Ferroelectric properties and reliability of sidewall SBT in integrated 3D FeCAPs
Oral presentation2004, The 16th International Symposium on Integrated FerroelectricsPublication Influence of dry-etch patterning of top electrode and SrBi2Ta2O9 on the properties of ferroelectric capacitors
Journal article2005, Journal of the Electrochemical Society, (152) 12, p.C865-C869Publication Influence of metal and SBT dry-etch on FeCAP properties and role of recovery anneals
Oral presentation2004, International Symposium on Integrated FerroelectricsPublication Influence of top electrode deposition conditions on the reliability of integrated SBT ferroelectric capacitors
Oral presentation2004, Journées Couches Ferroelectriques - JCFPublication Integration of ferroelectric SrBi2Ta2O9-based capacitors beyond 0.18 CMOS technology
Oral presentation2003, Conference of Surface Science and their Applications - CLACSA-11Publication Integration of ferroelectric SrBi2Ta2O9-based capacitors in 0.35 μm CMOS technology
Journal article2004, Physica Status Solidi C, (1) S1, p.S78-S82Publication Integration of MOCVD SBT stacked ferroelectric capacitors in a 0.35 μm CMOS technology
Journal article2004, Integrated Ferroelectrics, 66, p.71-83Publication Integration of MOCVD SBT stacked ferroelectric capacitors in A 0.35um CMOS technology
Oral presentation2004, The 16th International Symposium on Integrated FerroelectricsPublication Integration of SrBi2Ta2O9 (SBT) based FRAM capacitors: plasma etch issues and solutions
Oral presentation2004, E-MRS Spring Meeting Symposium D: Functional Oxides for Advanced Semiconductor TechnologiesPublication Oxygen barrier for stacked SBT-FeCAP on W-plug
Meeting abstract2002, International Joint Conference on the Application of Ferroelectrics - IFFF, 28/05/2002, p.274Publication Spacers alternatives for integration of 3D stacked SBT FeCAPs
Journal article2003, Integrated Ferroelectrics, 53, p.257-267Publication Stress evolution in integrated SrBi2Ta2O9 ferroelectric layers
Proceedings paper2004, Ferroelectric Thin Films XII, 1/12/2003, p.3-8