Repository logo Institutional repository
  • Communities & Collections
  • Browse
  • Site
Search repository
High contrast
  1. Home
  2. Browse by Author

Browsing by Author "Magnone, Paolo"

Filter results by typing the first few letters
Now showing 1 - 14 of 14
  • Results Per Page
  • Sort Options
  • Loading...
    Thumbnail Image
    Publication

    A distributed electrical model for interdigitated back contact silicon solar cells

    Giaffreda, Daniele
    ;
    Debucquoy, Maarten  
    ;
    Magnone, Paolo
    ;
    Posthuma, Niels  
    ;
    Fiegna, Claudio
    Proceedings paper
    2014, Proceedigns of the 4th International Conference on Crystalline Silicon Photovoltaics - SiliconPV, 25/03/2014, p.71-76
  • Loading...
    Thumbnail Image
    Publication

    Buried silicon-germanium pMOSFETs: experimental analysis in VLSI logic circuits under aggressive voltage scaling

    Crupi, Felice
    ;
    Alioto, Massimo
    ;
    Franco, Jacopo  
    ;
    Magnone, Paolo
    ;
    Kaczer, Ben  
    ;
    Groeseneken, Guido  
    Journal article
    2012, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, (20) 8, p.1487-1495
  • Loading...
    Thumbnail Image
    Publication

    Early assessment of emerging technologies for VLSI logic circuits from experimental measurements

    Crupi, Felice
    ;
    Magnone, Paolo
    ;
    Alioto, Massimo
    ;
    Franco, Jacopo  
    ;
    Groeseneken, Guido  
    Proceedings paper
    2012, IEEE International Conference on Solid-State and Integrated Circuit Technology - ICSICT, 29/10/2012
  • Loading...
    Thumbnail Image
    Publication

    Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling

    Crupi, Felice
    ;
    Alioto, Massimo
    ;
    Franco, Jacopo  
    ;
    Magnone, Paolo
    ;
    Kaczer, Ben  
    ;
    Groeseneken, Guido  
    Proceedings paper
    2011, IEEE International Symposium on Circuits and Systems - ISCAS, 15/05/2011, p.2249-2252
  • Loading...
    Thumbnail Image
    Publication

    Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noise

    Magnone, Paolo
    ;
    Crupi, Felice
    ;
    Pantisano, Luigi
    ;
    Pace, Calogero
    Journal article
    2007-02, Applied Physics Letters, (90) 7, p.73507
  • Loading...
    Thumbnail Image
    Publication

    Gate voltage and geometry dependence of the series resistance and of the carrier mobility in FinFET devices

    Magnone, Paolo
    ;
    Subramanian, Vaidy
    ;
    Parvais, Bertrand  
    ;
    Mercha, Abdelkarim  
    ;
    Pace, Calogero
    Journal article
    2008, Microelectronic Engineering, (85) 3, p.1728-1731
  • Loading...
    Thumbnail Image
    Publication

    High-mobility 0.85nm-EOT Si0.45Ge0.55 pFETs: delivering high performance at scaled VDD

    Mitard, Jerome  
    ;
    Witters, Liesbeth  
    ;
    Garcia Bardon, Marie  
    ;
    Christie, Phillip  
    ;
    Franco, Jacopo  
    Proceedings paper
    2010, IEEE International Electron Devices Meeting - IEDM, 6/12/2010, p.249-252
  • Loading...
    Thumbnail Image
    Publication

    Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs

    Tallarico, Andrea
    ;
    Stoffels, Steve  
    ;
    Magnone, Paolo
    ;
    Posthuma, Niels  
    ;
    Sangiorgi, Enrico
    Journal article
    2017, IEEE Electron Device Letters, (38) 1, p.99-102
  • Loading...
    Thumbnail Image
    Publication

    Matching performance of FinFET devices with fin widths down to 10nm

    Magnone, Paolo
    ;
    Mercha, Abdelkarim  
    ;
    Subramanian, Vaidy
    ;
    Parvais, Bertrand  
    ;
    Collaert, Nadine  
    Journal article
    2009, IEEE Electron Device Letters, (30) 12, p.1374-1376
  • Loading...
    Thumbnail Image
    Publication

    On the impact of defects close to the gate electrode on the low-frequency 1/f noise

    Magnone, Paolo
    ;
    Pantisano, Luigi
    ;
    Crupi, Felice
    ;
    Trojman, Lionel
    ;
    Pace, Calogero
    ;
    Giusi, Gino
    Journal article
    2008-09, IEEE Electron Devices Letters, 29, p.1056-1058
  • Loading...
    Thumbnail Image
    Publication

    PBTI in GaN-HEMT's with p-type gate: role of the aluminum content on DVtH and underlying degradation mechanisms

    Tallarico, Andrea
    ;
    Stoffels, Steve  
    ;
    Posthuma, Niels  
    ;
    Magnone, Paolo
    ;
    Marcon, Denis  
    Journal article
    2018, IEEE Transactions on Electron Devices, (65) 1, p.38-44
  • Loading...
    Thumbnail Image
    Publication

    Understanding the basic advantages of bulk FinFETs for sub- and near-threshold logic from device measurements

    Crupi, Felice
    ;
    Alioto, Massimo
    ;
    Franco, Jacopo  
    ;
    Magnone, Paolo
    ;
    Togo, Mitsuhiro
    Journal article
    2012, IEEE Transactions on Circuits and Systems II: Express Briefs, (59) 7, p.439-442
  • Loading...
    Thumbnail Image
    Publication

    Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode apacing length dependence

    Tallarico, Andrea
    ;
    Magnone, Paolo
    ;
    Stoffels, Steve  
    ;
    Lenci, Silvia  
    ;
    Hu, Jie
    ;
    Marcon, Denis  
    Proceedings paper
    2016, IEEE International Reliability Physics Symposium, 17/04/2016, p.4A.5
  • Loading...
    Thumbnail Image
    Publication

    Understanding the influence of busbars in large-area IBC solar cells by distributed SPICE simulations

    Magnone, Paolo
    ;
    Debucquoy, Maarten  
    ;
    Giaffreda, Daniele
    ;
    Posthuma, Niels  
    ;
    Fiegna, Claudio
    Journal article
    2015, IEEE Journal of Photovoltaics, (5) 2, p.552-558

Follow imec on

VimeoLinkedInFacebook

The repository

  • Contact us
  • Policy
  • About imec
Privacy statement | Cookie settings