Browsing by Author "Nohira, Hiroshi"
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Publication Alternative gate insulator materials for future generation MOSFETs
Oral presentation2001, International Forum on Semiconductor Technology - IFST; 7-8 March 2001; Antwerpen, Belgium.Publication Characterisation of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
Journal article2002, Journal of Non-Crystalline Solids, (303) 1, p.83-87Publication Characterization of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
Oral presentation2001, Symposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.Publication Combination of high-resolution RBS and angle-resolved XPS: accurate depth profiling of chemical states
Journal article2008, Surface and Interface Analysis, (40) 3_4, p.423-426Publication Gate stack preparation with high-k materials in a cluster tool
Proceedings paper2001, Proceedings of the IEEE International Symposium on Semiconductor Manufacturing - ISSM, 8/10/2001, p.395-398Publication High k dielectric materials prepared by atomic layer CVD
Oral presentation2001, 12th INFOS Conference - Insulating Films on Semiconductors; June 2001; Udine, Italy.Publication Infrared interface analysis of high-k dielectrics deposited by atomic layer chemical vapour deposition
Proceedings paper2001, Extended Abstracts of the International Workshop on Gate Insulator - IWGI, 1/11/2001, p.226-229Publication Integration issues of polysilicon with high k dielectrics deposited by Atomic Layer Chemical Vapor Deposition
Proceedings paper2002, Semiconductor Silicon 2002. Proceedings of the 9th International Symposium on Silicon Materials Science and Technology, 12/05/2002, p.747-760Publication Interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition
Oral presentation2001, IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference onPublication Physical characterization of high-k gate stacks deposited on HF-last surfaces
Proceedings paper2001, Ectended Abstracts of the International Workshop on Gate Insulator. IWGI 2001, 1/11/2001, p.86-92Publication Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition
Journal article2003, Microelectronic Engineering, (65) 3, p.259-272Publication TOF-SIMS as a rapid diagnostic tool to monitor the growth mode of thin (high k) films
Journal article2003, Applied Surface Science, 203-204, p.400-403Publication TOFSIMS as a monitor for thin film growth
Oral presentation2001, 13th International Conference on Secondary Ion Mass Spectrometry - SIMS 13; 11-16 November 2001; Nara, Japan.