Browsing by Author "Put, Sofie"
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Publication Charge transport in the discotic liquid crystal H2Pc(14,10)4
Oral presentation2004, Belgian Polymer Group MeetingPublication Effect of airgap deep trench isolation on the gamma radiation behavior of a 0.13 μm SiGe:C NPN HBT technology
Proceedings paper2008, 8th European Workshop on Radiation Effects on Components and Systems - RADECS, 10/09/2008, p.426-431Publication Effect of airgap deep trench isolation on the gamma radiation behavior of a 0.13um SiGe:C NPN HBT technology
; ; Publication Effect of rotation, gate-dielectric and SEG on the noise
; ; Claeys, CorProceedings paper2009, 5th EUROSOI Workshop, 19/01/2009, p.123-124Publication Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs
; Publication Electrical performance and reliability aspects of strain engineered deep submicron CMOS technologies
Proceedings paper2007, Int. Conf. on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT), 28/07/2007, p.15-22Publication Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs
Journal article2011, Solid-State Electronics, (59) 1, p.18-24Publication Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs
Proceedings paper2010, 6th Workshop on Silicon-on-Insulator Technology, Devices and Circuits - EUROSOI, 25/01/2010, p.119-120Publication Geometry and strain dependence of the proton radiation behavior of MuGFET devices
Journal article2007, IEEE Trans. Nuclear Science, (54) 6, p.2227-2232Publication High-energy neutrons effect on strained and non-strained SO MuGFETs and planar MOSFETs
; ; Publication High-energy neutrons effect on strained and non-strained SOI MuGFETs
Oral presentation2010, 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREFPublication High-temperature characterization of advanced strained nMUGFETs
; ; Publication Impact of radiation on the operation and reliability of deep submicron CMOS technologies
Publication Impact of Si channel thickness and buried oxide quality on the proton radiation behavior of 65 nm FD SOI
Proceedings paper2007-01, EUROSOI Workshop Proceedings: 3rd Workshop of the Thematic Network on Silicon-on-Insulator Technology, Devices and Circuits, 24/01/2007, p.23-24Publication Impact of strain and source/drain engineering on the low-frequency noise behaviour in n-channel Tri-Gate FinFETs
; ; ; Journal article2008, Solid-State Electronics, (52) 12, p.1889-1894Publication Impact strain engineering on gate stack quality and reliability
Journal article2008, Solid-State Electronics, (52) 8, p.1115-1126Publication In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels
Proceedings paper2007, Workshop on Semiconductor Advances for Future Electronics and Sensors - SAFE, 29/11/2007, p.452-456Publication Influence of back-gate bias and process conditions on the gamma degradation of the transconductance of MuGFETs
Journal article2010, IEEE Transactions on Nuclear Science, (57) 4, p.1771-1776Publication Influence of fin width on the total dose behavior of p-channe bulk MuGFETs
Journal article2010, IEEE Electron Device Letters, (31) 3, p.243-245Publication Low-frequency noise analysis of g-irradiated p-channel bulk MuGFETs
Proceedings paper2010, 11th International Conference on Ultimate Integration on Silicon - ULIS, 18/03/2010, p.25-28