Browsing by Author "Reisinger, Hans"

Advanced modeling of oxide defects for random telegraph noise

Analytic modeling of the bias temperature instability using capture/emission time maps

'Atomistic' simulation of RTS amplitudes due to single and multiple charged defect states and their interactions

Bistable defects as the cause for NBTI and RTN

Extraction of the lateral position of border traps in nanoscale MOSFETs

Mixed hot-carrier/bias temperature instability degradation regimes in full {VG, VD} bias space: implications and peculiarities

On the 'permanent' component of NBTI

On the frequency dependence of the bias temperature instability

On the microscopic origin of the frequency dependence of hole trapping in pMOSFETs

Origin of NBTI variability in deeply scaled pFETs

Oxide traps in MOS transistors: semi-automatic extraction of trap parameters from time dependent defect spectroscopy

Recent advances in understanding the bias temperature instability

SrTiOx for sub-20 nm DRAM technology nodes - characterization and modeling

Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise

The "permanent" component of NBTI: composition and annealing

The paradigm shift in understanding the bias temperature instability: from reaction–diffusion to switching oxide traps

The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability

Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors