Browsing by Author "Sasaki, Yuichiro"

A 2nd generation of 14/16nm-node compatible strained-Ge pFINFET with improved performance with respect to advanced Si-channel FinFETs

A comparison of arsenic and phosphorus extension by room temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions

Atom probe tomography for 3D-dopant analysis in FinFET devices

Device architectures and their integration challenges for 1x nm node: FinFETs and high mobility channel

First demonstration of 15nm-WFIN inversion-mode relaxed germanium bulk nFinFET with Si-cap free RMG and NiSiGe source/drain

Germanium for advanced CMOS transistors: status and trends of this technology

Heated implantation with amorphous carbon CMOS mask for scaled FinFETs

Heated implantation with amorphous carbon CMOS mask for scaled FinFETs

Hot-carrier analysis on nMOS Si finFETs with solid source doped junctions

Impact of multi-gate device architectures on digital and analog circuits and its implications on system-on-chip technologies

Improved sidewall doping with small implant angle by AsH3 Ion assisted deposition and doping process for scaled NMOS Si bulk FinFETs

Junction strategies for 1x nm technology node with FINFET and high mobility channel

Novel junction design for NMOS Si bulk-FinFETs with extension doping by phosphorus doped silicate glass

Optimization of standard As ion implantation for NMOS Si bulk FinFETs extension

Plasma doping and reduced crystalline damage for conformally doped fin feld effect transistors

RMG Technology Integration in FinFET Devices