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Browsing by Author "Shickova, Adelina"

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    Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT

    Rothschild, Aude
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    Shi, Xiaoping
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    Everaert, Jean-Luc
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    Kerner, Christoph  
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    Chiarella, Thomas  
    Proceedings paper
    2007, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2007, p.198-199
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    Addressing key concerns for implementation of Ni FUSI into manufacturing for 45/32 nm CMOS

    Shickova, Adelina
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    Kauerauf, Thomas
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    Rothschild, Aude
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    Aoulaiche, Marc
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    Sahhaf, Sahar  
    Proceedings paper
    2007, Symposium on VLSI. Technology Digest of Technical Papers, 14/06/2007, p.158-159
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    Bias temperature instability effects in devices with fully-silicided gate stacks, strained-Si and multiple-gate architectures

    Shickova, Adelina
    PHD thesis
    2008-12
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    Comparison of interconnection network parameters for reconfigurable systems

    Shickova, Adelina
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    Marescaux, Théodore
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    Verkest, Diederik  
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    Catthoor, Francky  
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    Vernalde, Serge  
    Proceedings paper
    2003, ProRISC, Workshop on Circuits, Systems and Signal Processing, 25/11/2003, p.141-144
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    Design style case study for computer nodes of a heterogeneous NoC platform

    Lambrechts, Andy  
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    Vander Aa, Tom  
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    Jayapala, Murali  
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    Leroy, Anthony
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    Talavera, Guillermo
    Proceedings paper
    2004-12, 25th IEEE International Real-Time Systems Symposium, 5/12/2004, p.104-113
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    Dielectric quality and reliability of FUSI/HfSiON devices with process induced strain

    Shickova, Adelina
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    Kaczer, Ben  
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    Simoen, Eddy  
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    Verheyen, Peter  
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    Eneman, Geert  
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    Jurczak, Gosia  
    Journal article
    2007, Microelectronic Engineering, (84) 9_10, p.1906-1909
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    NBTI reliability of Ni FUSI/HfSiON gates: effect of silicide phase

    Shickova, Adelina
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    Kaczer, Ben  
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    Veloso, Anabela  
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    Aoulaiche, Marc
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    Houssa, Michel  
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    Maes, Herman
    Journal article
    2007, Microelectronics Reliability, (47) 4_5, p.505-507
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    Negligible effect of process-induced strain on intrinsic NBTI behavior

    Shickova, Adelina
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    Kaczer, Ben  
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    Verheyen, Peter  
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    Eneman, Geert  
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    San Andres Serrano, Enrique
    Journal article
    2007, IEEE Electron Device Letters, (28) 3, p.242-244
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    Novel, effective and cost-efficient method of introducing fluorine into metal/Hf-based gate stack in MuGFET and planar SOI devices with significant BTI improvement

    Shickova, Adelina
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    Collaert, Nadine  
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    Zimmerman, Paul
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    Demand, Marc  
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    Simoen, Eddy  
    Proceedings paper
    2007, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2007, p.112-113
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    On the 1/f noise in pMOSFETs with embedded SiGe source/drain

    Simoen, Eddy  
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    Verheyen, Peter  
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    Shickova, Adelina
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    Hikavyy, Andriy  
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    Loo, Roger  
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    Claeys, Cor
    Meeting abstract
    2007, 8th European Workshop on ULtimate Integration of Silicon - ULIS, 15/03/2007, p.75-78
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    On the low-frequency noise of pMOSFETs with embedded SiGe source/drain and fully silicided metal gate

    Simoen, Eddy  
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    Verheyen, Peter  
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    Shickova, Adelina
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    Loo, Roger  
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    Claeys, Cor
    Journal article
    2007, IEEE Electron Device Letters, (28) 11, p.987-989
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    Reliability issues in MuGFET nanodevices

    Groeseneken, Guido  
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    Crupi, Felice
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    Shickova, Adelina
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    Thijs, Steven  
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    Linten, Dimitri  
    Proceedings paper
    2008, IEEE International Reliability Physics Symposium Proceeding - IRPS, 27/04/2008, p.52-60
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    Reliability of strained-Si devices with post-oxide-deposition strain introduction

    Shickova, Adelina
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    Verheyen, Peter  
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    Eneman, Geert  
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    Degraeve, Robin  
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    Simoen, Eddy  
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    Favia, Paola  
    Journal article
    2008, IEEE Transactions on Electron Devices, (55) 12, p.3432-3441
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    Spatial division multiplexing: a novel approach for guaranteed throughput on NoCs

    Leroy, Anthony
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    Marchal, Pol
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    Shickova, Adelina
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    Catthoor, Francky  
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    Verkest, Diederik  
    Proceedings paper
    2005, Proceedings CODES-ISSS: IEEE/ACM/IFIP International Conference on Hardware - Software Codesign and System Synthesis, 19/09/2005, p.81-86
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    The role of nitrogen in HfSiON defect passivation

    O'Connor, Robert
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    Aoulaiche, Marc
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    Pantisano, Luigi
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    Shickova, Adelina
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    Degraeve, Robin  
    Proceedings paper
    2009-04, 47th Annual IEEE International Reliability Physics Symposium - IRPS, 26/04/2009, p.921-924
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    Trapping in 1nm EOT high-k / MG

    Zahid, Mohammed
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    Pantisano, Luigi
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    Degraeve, Robin  
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    Aoulaiche, Marc
    ;
    Trojman, Lionel
    Proceedings paper
    2008, Physics and Technology of High-k Dielectrics 6, 13/10/2008, p.77-84

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