Browsing by Author "Shickova, Adelina"
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Publication Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT
Proceedings paper2007, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2007, p.198-199Publication Addressing key concerns for implementation of Ni FUSI into manufacturing for 45/32 nm CMOS
Proceedings paper2007, Symposium on VLSI. Technology Digest of Technical Papers, 14/06/2007, p.158-159Publication Bias temperature instability effects in devices with fully-silicided gate stacks, strained-Si and multiple-gate architectures
Shickova, AdelinaPHD thesis2008-12Publication Comparison of interconnection network parameters for reconfigurable systems
Proceedings paper2003, ProRISC, Workshop on Circuits, Systems and Signal Processing, 25/11/2003, p.141-144Publication Design style case study for computer nodes of a heterogeneous NoC platform
Proceedings paper2004-12, 25th IEEE International Real-Time Systems Symposium, 5/12/2004, p.104-113Publication Dielectric quality and reliability of FUSI/HfSiON devices with process induced strain
Journal article2007, Microelectronic Engineering, (84) 9_10, p.1906-1909Publication NBTI reliability of Ni FUSI/HfSiON gates: effect of silicide phase
Journal article2007, Microelectronics Reliability, (47) 4_5, p.505-507Publication Negligible effect of process-induced strain on intrinsic NBTI behavior
Journal article2007, IEEE Electron Device Letters, (28) 3, p.242-244Publication Novel, effective and cost-efficient method of introducing fluorine into metal/Hf-based gate stack in MuGFET and planar SOI devices with significant BTI improvement
Proceedings paper2007, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2007, p.112-113Publication On the 1/f noise in pMOSFETs with embedded SiGe source/drain
Meeting abstract2007, 8th European Workshop on ULtimate Integration of Silicon - ULIS, 15/03/2007, p.75-78Publication On the low-frequency noise of pMOSFETs with embedded SiGe source/drain and fully silicided metal gate
Journal article2007, IEEE Electron Device Letters, (28) 11, p.987-989Publication Reliability issues in MuGFET nanodevices
Proceedings paper2008, IEEE International Reliability Physics Symposium Proceeding - IRPS, 27/04/2008, p.52-60Publication Reliability of strained-Si devices with post-oxide-deposition strain introduction
Journal article2008, IEEE Transactions on Electron Devices, (55) 12, p.3432-3441Publication Spatial division multiplexing: a novel approach for guaranteed throughput on NoCs
Proceedings paper2005, Proceedings CODES-ISSS: IEEE/ACM/IFIP International Conference on Hardware - Software Codesign and System Synthesis, 19/09/2005, p.81-86Publication The role of nitrogen in HfSiON defect passivation
Proceedings paper2009-04, 47th Annual IEEE International Reliability Physics Symposium - IRPS, 26/04/2009, p.921-924Publication Trapping in 1nm EOT high-k / MG
Proceedings paper2008, Physics and Technology of High-k Dielectrics 6, 13/10/2008, p.77-84