Browsing by Author "Sioncke, Sonja"
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Publication 15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process
Proceedings paper2014, Symposium on VLSI Technology, 9/06/2014, p.138-139Publication A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET
Journal article2017, IEEE Electron Device Letters, (38) 3, p.318-321Publication A study of the influence of typical wet chemical treatments on the germanium wafer surface
Oral presentation2004, 7th International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSSPublication A study of the influence of typical wet chemical treatments on the germanium wafer surface
Proceedings paper2005, Ultra Clean Processing of Silicon Surfaces VII: Proceedings of the 7th International Symposium, 20/09/2004, p.27-30Publication Adsorption of O2 on Ge(100): Atomic geometry and site-specific electronic structure
Journal article2012, Journal of Physical Chemistry C, (9925) 9929, p.116-18Publication Advanced channel materials for the semiconductor industry
Proceedings paper2015, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference - S3S, 4/10/2015, p.1-5Publication Al2O3/InGaAs metal-oxide-semiconductor interface properties: impact of Gd2O3 and Sc2O3 interfacial layers by atomic layer deposition
Journal article2014, ECS Journal of Solid State Science and Technology, (3) 11, p.N133-N144Publication ALD growth behavior of high-k nanolayers on various substrates characterized by X-Ray Spectrometry in gracing incidence geometry
Proceedings paper2013, Ultra Clean Processing of Semiconductor Surfaces XI - UCPSS, 17/09/2012, p.95-97Publication ALD on high mobility channels: engineering the proper gate stack passivation
Meeting abstract2010, 218th ECS Meeting Symposium ' Atomic Layer Deposition Applications 6', 10/10/2010, p.1401Publication ALD on high mobility channels: engineering the proper gate stack passivation
Proceedings paper2010, Atomic Layer Deposition Applications 6, 10/10/2010, p.9-23Publication Aluminium oxide atomic layer deposition on semiconductor substrates
Proceedings paper2011, Physics and Technology of High-k Materials 9, 9/10/2011, p.149-160Publication Atomic imaging of nucleation of trimethylaluminium on clean H2O functionalized Ge(100) surfaces
Journal article2011, Journal of Chemical Physics, 135, p.54705Publication Atomic layer deposition of Al2O3 on S-passivated Ge
Journal article2011, Microelectronic Engineering, (88) 7, p.1553-1556Publication Atomic layer deposition of Gd2O3 and Sc2O3 on In0.53Ga0.47As: Interfacial layer engineering
Meeting abstract2014, 12th International Baltic Conference on Atomic Layer Deposition, 12/05/2014Publication Atomic layer deposition of hafnium based gate dielectric layers for CMOS applications
Proceedings paper2007, Atomic Layer Deposition Applications 3, 7/10/2007, p.227-241Publication Atomic layer deposition of hafnium oxide on Ge and GaAs substrates: precursors and surface preparation
Journal article2008, Journal of the Electrochemical Society, (155) 12, p.H937-H944Publication Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels
Meeting abstract2008, 214th ECS Meeting, 12/10/2008, p.2449Publication Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels
Proceedings paper2008, SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices, 12/10/2008, p.671-685Publication Atomic layer deposition of high-k dielectrics on sulphur-passivated germanium
Journal article2011, Journal of the Electrochemical Society, (158) 7, p.H687-H692Publication Atomic layer deposition of novel interface layers on III-V channel devices
Proceedings paper2017, AVS 17th International Conference on Atomic Layer Deposition - ALD, 15/07/2017, p.AA2-TuA8