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Browsing by Author "Sioncke, Sonja"

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    15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process

    Mitard, Jerome  
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    Witters, Liesbeth  
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    Loo, Roger  
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    Lee, Seung Hun
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    Sun, J.W.
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    Franco, Jacopo  
    Proceedings paper
    2014, Symposium on VLSI Technology, 9/06/2014, p.138-139
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    A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET

    Vais, Abhitosh  
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    Franco, Jacopo  
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    Martens, Koen  
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    Lin, Dennis  
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    Sioncke, Sonja
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    Putcha, Vamsi  
    Journal article
    2017, IEEE Electron Device Letters, (38) 3, p.318-321
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    A study of the influence of typical wet chemical treatments on the germanium wafer surface

    Onsia, Bart  
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    Conard, Thierry  
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    De Gendt, Stefan  
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    Heyns, Marc  
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    Hoflijk, Ilse  
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    Mertens, Paul  
    Oral presentation
    2004, 7th International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS
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    A study of the influence of typical wet chemical treatments on the germanium wafer surface

    Onsia, Bart  
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    Conard, Thierry  
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    De Gendt, Stefan  
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    Heyns, Marc  
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    Hoflijk, Ilse  
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    Mertens, Paul  
    Proceedings paper
    2005, Ultra Clean Processing of Silicon Surfaces VII: Proceedings of the 7th International Symposium, 20/09/2004, p.27-30
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    Adsorption of O2 on Ge(100): Atomic geometry and site-specific electronic structure

    Fleischmann, Claudia  
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    Schouteden, K.
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    Merckling, Clement  
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    Sioncke, Sonja
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    Meuris, Marc  
    Journal article
    2012, Journal of Physical Chemistry C, (9925) 9929, p.116-18
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    Advanced channel materials for the semiconductor industry

    Collaert, Nadine  
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    Alian, AliReza  
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    Arimura, Hiroaki  
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    Boccardi, Guillaume  
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    Eneman, Geert  
    Proceedings paper
    2015, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference - S3S, 4/10/2015, p.1-5
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    Al2O3/InGaAs metal-oxide-semiconductor interface properties: impact of Gd2O3 and Sc2O3 interfacial layers by atomic layer deposition

    Ameen, Mahmoud
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    Nyns, Laura  
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    Sioncke, Sonja
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    Lin, Dennis  
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    Ivanov, Tsvetan  
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    Conard, Thierry  
    Journal article
    2014, ECS Journal of Solid State Science and Technology, (3) 11, p.N133-N144
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    ALD growth behavior of high-k nanolayers on various substrates characterized by X-Ray Spectrometry in gracing incidence geometry

    Müller, Matthias
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    Sioncke, Sonja
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    Delabie, Annelies  
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    Beckhoff, Burkhard
    Proceedings paper
    2013, Ultra Clean Processing of Semiconductor Surfaces XI - UCPSS, 17/09/2012, p.95-97
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    ALD on high mobility channels: engineering the proper gate stack passivation

    Sioncke, Sonja
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    Lin, Dennis  
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    Brammertz, Guy  
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    Delabie, Annelies  
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    Conard, Thierry  
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    Caymax, Matty  
    Meeting abstract
    2010, 218th ECS Meeting Symposium ' Atomic Layer Deposition Applications 6', 10/10/2010, p.1401
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    ALD on high mobility channels: engineering the proper gate stack passivation

    Sioncke, Sonja
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    Lin, Hang Chun
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    Adelmann, Christoph  
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    Brammertz, Guy  
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    Delabie, Annelies  
    Proceedings paper
    2010, Atomic Layer Deposition Applications 6, 10/10/2010, p.9-23
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    Aluminium oxide atomic layer deposition on semiconductor substrates

    Delabie, Annelies  
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    Sioncke, Sonja
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    Rip, Jens  
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    Van Elshocht, Sven  
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    Pourtois, Geoffrey  
    Proceedings paper
    2011, Physics and Technology of High-k Materials 9, 9/10/2011, p.149-160
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    Atomic imaging of nucleation of trimethylaluminium on clean H2O functionalized Ge(100) surfaces

    Lee, Joon Sung
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    Kaufman-Osborn, Tobin
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    Melitz, Wilhelm
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    Lee, Sangyeob
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    Delabie, Annelies  
    Journal article
    2011, Journal of Chemical Physics, 135, p.54705
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    Atomic layer deposition of Al2O3 on S-passivated Ge

    Sioncke, Sonja
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    Ceuppens, Joris  
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    Lin, Dennis  
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    Nyns, Laura  
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    Delabie, Annelies  
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    Struyf, Herbert  
    Journal article
    2011, Microelectronic Engineering, (88) 7, p.1553-1556
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    Atomic layer deposition of Gd2O3 and Sc2O3 on In0.53Ga0.47As: Interfacial layer engineering

    Ameen, Mahmoud
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    Nyns, Laura  
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    Lin, Dennis  
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    Ivanov, Tsvetan  
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    Conard, Thierry  
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    Meersschaut, Johan  
    Meeting abstract
    2014, 12th International Baltic Conference on Atomic Layer Deposition, 12/05/2014
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    Atomic layer deposition of hafnium based gate dielectric layers for CMOS applications

    Delabie, Annelies  
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    Nyns, Laura  
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    Bellenger, Florence
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    Caymax, Matty  
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    Conard, Thierry  
    Proceedings paper
    2007, Atomic Layer Deposition Applications 3, 7/10/2007, p.227-241
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    Atomic layer deposition of hafnium oxide on Ge and GaAs substrates: precursors and surface preparation

    Delabie, Annelies  
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    Brunco, David
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    Conard, Thierry  
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    Favia, Paola  
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    Bender, Hugo  
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    Franquet, Alexis  
    Journal article
    2008, Journal of the Electrochemical Society, (155) 12, p.H937-H944
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    Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels

    Delabie, Annelies  
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    Caymax, Matty  
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    Bellenger, Florence
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    Brammertz, Guy  
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    Conard, Thierry  
    Meeting abstract
    2008, 214th ECS Meeting, 12/10/2008, p.2449
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    Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels

    Delabie, Annelies  
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    Alian, AliReza  
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    Bellenger, Florence
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    Brammertz, Guy  
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    Brunco, David
    Proceedings paper
    2008, SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices, 12/10/2008, p.671-685
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    Atomic layer deposition of high-k dielectrics on sulphur-passivated germanium

    Sioncke, Sonja
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    Lin, Dennis  
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    Nyns, Laura  
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    Brammertz, Guy  
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    Delabie, Annelies  
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    Conard, Thierry  
    Journal article
    2011, Journal of the Electrochemical Society, (158) 7, p.H687-H692
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    Atomic layer deposition of novel interface layers on III-V channel devices

    Tang, Fu
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    Jiang, Xiaoqiang
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    Xie, Qi  
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    Givens, Michael  
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    Maes, Jan  
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    Sioncke, Sonja
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    Ivanov, Tsvetan  
    Proceedings paper
    2017, AVS 17th International Conference on Atomic Layer Deposition - ALD, 15/07/2017, p.AA2-TuA8
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