Browsing by Author "Van Daele, Benny"
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Publication Advanced carrier depth profiling on Si and Ge with M4PP
Proceedings paper2007, International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology and Modeling, 6/05/2007Publication Advanced carrier depth profiling on Si and Ge with micro four-point probe
Journal article2008, Journal of Vacuum Science and Technology B, (26) 1, p.317-321Publication Analysis of As, P diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach
Proceedings paper2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.955-958Publication Analysis of the pre-epi bake conditions on the defect creation in recessed Si1-xGex S/D junctions
Proceedings paper2007, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7, 7/10/2007, p.47-53Publication Cesium near-surface concentration in low energy, negative mode dynamic SIMS
Journal article2008, Applied Surface Science, (255) 4, p.1316-1319Publication Cesium near-surface concentration in low energy, negative mode dynamic SIMS
Meeting abstract2007-10, SIMS XVI, 29/10/2007Publication Correlation of transport and structural properties in AlGaN/GaN HEMT: Strain modification by means of AlN interlayers
Oral presentation2003, MRS Fall Meeting Symposium Y: GaN and Related AlloysPublication Effective work-function modulation by aluminum-ion implantation for metal-gate technology (poly-Si/TiN/SiO2)
Journal article2007, IEEE Electron Device Letters, (28) 12, p.1089-1091Publication Formation of germanium shallow junction by flash annealing
Journal article2007, Nuclear Instruments and Methods B, (257) 1_2, p.157-160Publication Impact of repetitive and random surface morphologies on the ripple formation on ion bombarded SiGe-surfaces
Journal article2008-08, New Journal of Physics, 10, p.83012Publication Impact of the chemical concentration on the solid-phase epitaxial regrowth of phosphorus implanted preamorphized germanium
Journal article2009, Journal of Applied Physics, (105) 9, p.93538Publication Improvement of ohmic contacts on AlGaN/GaN HEMT's by using in-situ Si3N4 passivation layer
Proceedings paper2005-06, 11th European Workshop on MOVPE, 5/06/2005, p.I01Publication In-line characterization of heterojunction bipolar transistor base layers by high-resolution x-ray diffraction
Oral presentation2007, 3rd International Workshop on New Group IV Semiconductor NanoelectronicsPublication In-line characterization of heterojunction bipolar transistor base layers by high-resolution X-ray diffraction
Proceedings paper2007, Analytical Techniques for Semiconductor Materials and Process Characterization 5 - ALTECH, 13/09/2007, p.151-160Publication Junction architecture for planar devices
Proceedings paper2007, Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 3: New Materials, Processes and Equipment, 6/05/2007, p.351-364Publication Junction formation in Ge by ion implantation
Proceedings paper2007-05, Proceedings International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology, and Modeling - INSIGHT, 6/05/2007, p.297-304Publication Laser annealed junctions: process integration sequence optimization for advanced CMOS technologies
Proceedings paper2007, Extended Abstracts of the 7th International Workshop on Junction Technology, 8/06/2007, p.137-140Publication Low temperature epitaxy and the importance of moisture control
Oral presentation2007, 5th International Conferencce on Silicon Epitaxy and Heterostructures - ICSI-5Publication Low temperature epitaxy and the importance of moisture control
Journal article2008, Thin Solid Films, 517, p.416-418Publication Occurrence of transient enhanced diffusion of B in Ge
Oral presentation2007, GADEST Conference: Gettering and Defect Engineering in Semiconductor Technology