Browsing by Author "Van de Kerkhove, Jeroen"

300 mm wafer development for pattern collapse evaluations

Alignment and averaging of scanning electron microscope image contours for optical proximity correction modeling purposes

Calibration of physical resist models: methods, usability, and predictive power

Calibration of physical resist models: methods, usability, and predictive power

Contour-quality assessment for OPC model calibration

EUV low-n attenuated phase-shift mask on random logic Via single patterning at pitch 36nm

Experimental proximity matching of ArF scanners

High accuracy OPC-modeling by using advanced CD-SEM based contours in the next generation lithography

High-accuracy optical proximity correction modeling using advanced critical dimension scanning electron microscope-based contours in next-generation lithography

High-precision contouring from SEM image in 32-nm lithography and beyond

Impact of stochastic effects on EUV printability limits

Investigation of litho1-litho2 proximity differences for a LPLE double patterning process

Litho 1-litho 2 proximity differences for s LELE and LPLE double patterning processes

Measurement technology to quantify 2D pattern shape in sub-2xnm advanced lithography

Metal1 patterning study for randon-logic applications with 193i, using calibrated OPC for litho and etch

Model calibration and validation for pre-production EUVL

OPC resist model separability validation after SMO source change

SRAM cell architecture in 20nm and beyond: bulk planar versus bulk finFET

Staggered pillar patterning using 0.33NA EUV lithography

Tool-to-tool optical proximity effect matching