Browsing by Author "Wang, Wei-E"
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Publication 1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
; ; ; ; Proceedings paper2011, Symposium on VLSI Technology, 13/06/2011, p.134-135Publication 6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT
Proceedings paper2010, IEEE International Electron Devices Meeting - IEDM, 6/12/2010, p.70-73Publication 8Å Tinv gate-first dual channel technology achieving low-Vt high performance CMOS
Proceedings paper2010, IEEE Symposium on VLSI Technology, 15/06/2010, p.181-182Publication A DLTS study of Pt/Al2O3/InxGa1-xAs capacitors
Proceedings paper2009, Analytical Techniques for Semiconductor Materials and Process Characterization 6 - ALTECH, 4/10/2009, p.151-161Publication A DLTS study of Pt/Al2O3/InxGa1-xAs capacitors
Meeting abstract2009, 216th ECS Meeting, 4/10/2009, p.1961Publication A fast and accurate method to study the impact of interface traps on germanium MOS performance
Journal article2011, IEEE Transactions on Electron Devices, (58) 4, p.938-944Publication Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces
; ; ; ; Publication Capacitance-voltage (CV) characterization of GaAs-oxide interfaces
Meeting abstract2008, E-MRS Spring Meeting Symposium J: Beyond Silicon Technology: Materials and Devices for Post-Si CMOS, 26/05/2008Publication Capacitance-voltage (CV) characterization of GaAs/high-k oxide interfaces
Meeting abstract2008, 214th ECS Meeting, 12/10/2008, p.1973Publication Capacitance-voltage (CV)characterization of GaAs-oxide interfaces
Proceedings paper2008, Physics and Technology of High-k Dielectrics 6, 12/10/2008, p.507-519Publication Capacitance-voltage characterization of GaAs-Al2O3 interfaces
Journal article2008, Applied Physics Letters, (93) 18, p.183504Publication Capacitance-voltage characterization of GaAs-Oxide interfaces
Journal article2008, Journal of the Electrochemical Society, (155) 12, p.H945-H950Publication Catalytic forming gas anneal on III-V/Ge MOS sytems
Proceedings paper2009, High-k Dielectrics on Semiconductors with High Carrier Mobility, 30/11/2009, p.1194-A07-06Publication Combined reflectometry-ellipsometry technique to measure graphite down to monolayer thickness
Publication Dual-channel technology with Cap-free single metal gate for high performance CMOS in gate-first and gate-last integration
Proceedings paper2011, IEEE International Electron Devices Meeting - IEDM, 5/12/2011, p.654-657Publication Effective reduction of interfacial traps in Al2O3 /GaAs(001) gate stacks using surface engineering and thermal annealing
Journal article2010, Applied Physics Letters, (97) 11, p.112901Publication Electrical characterization of the MOS (metal-oxide-semiconductor) system: High mobility substrates
; ; ; ; Publication Electrical properties of III-V/oxide interfaces
Meeting abstract2009, 215th Electrochemical Society Spring Meeting, 24/05/2009, p.1337Publication Electrical properties of III-V/oxide interfaces
Proceedings paper2009, Graphene and Emerging Materials for Post-CMOS Applications, 24/05/2009, p.375-386Publication Electrical properties of InGaAs/high-k oxide interfaces: measurement and simulation
Meeting abstract2010, MRS Spring Meeting Symposium I: Materials for End-of-Roadmap Scaling of CMOS Devices, 5/04/2010, p.I6.9
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