Browsing by Author "Wu, Tian-Li"

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures

Combined PEALD gate-dielectric and in-situ SiN cap-layer for reduced Vth shift and RDS-ON dispersion of AlGaN/GaN HEMTs on 200 mm Si wafer

Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN

Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory

Comprehensive investigation of on-state stress on D-mode AlGaN/GaN MIS-HEMTs

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Demonstration of 64 Conductance States and Large Dynamic Range in Sidoped HfO2 FeFETs under Neuromorphic Computing Operations

Device breakdown optimization of Al2O3/GaN E-mode MISFETs

Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits

Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology

Evidence of hot-electron degradation in GaN-based MIS-HEMTs submitted to high temperature constant source current stress

Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

Forward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors

Forward gate bias on-state stress on AlGaN/GaN MIS-HEMTs for power switching applications

Gate stability of enhancement mode GaN power devices

Gate stability of GaN-based HEMTs with p-type gate

High temperature behaviour of GaN-on-Si high power MISHEMT devices

High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs