Browsing by Author "Zhang, Wei Dong"

A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs

A single pulse charge pumping technique for fast measurements of interface states

An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel

Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack

Insight into electron traps and their energy distribution under positive bias temperature stress and hot carrier aging

Investigation of preexisting and generated defects in nonfilamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution

Key issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs

NBTI-generated defects in nanoscaled devices: fast characterization methodology and modeling

New analysis method for time-dependent device-to-device variation accounting for within-device fluctuation

Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation

TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device

Trigger-when-charged: a technique for directly measuring RTN and BTI-induced threshold voltage fluctuation under use-Vdd