Browsing by author "Maes, Jos"
Now showing items 1-13 of 13
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Alternative gate insulator materials for future generation MOSFETs
Heyns, Marc; Bender, Hugo; Carter, Richard; Caymax, Matty; Conard, Thierry; De Gendt, Stefan; Degraeve, Robin; De Witte, Hilde; Groeseneken, Guido; Haukka, S.; Henson, Kirklen; Houssa, Michel; Kubicek, Stefan; Maes, Jos; Naili, Mohamed; Nohira, Hiroshi; Tsai, Wilman; Tuominen, Marko; Vandervorst, R.; Wilhelm, Rudi; Young, Edward; Zhao, Chao (2001) -
Characterisation of AlCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties
Besling, Wim; Young, Edward; Conard, Thierry; Zhao, Chao; Carter, Richard; Vandervorst, Wilfried; Caymax, Matty; De Gendt, Stefan; Heyns, Marc; Maes, Jos; Tuominen, Marko; Haukka, S. (2002) -
Characterisation of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
Nohira, Hiroshi; Tsai, Wilman; Besling, Wim; Young, Edward; Pétry, Jasmine; Conard, Thierry; Vandervorst, Wilfried; De Gendt, Stefan; Heyns, Marc; Maes, Jos; Tuominen, Marko (2002) -
Characterization of ALCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties
Besling, Wim; Young, Edward; Conard, Thierry; Zhao, Chao; Vandervorst, Wilfried; Caymax, Matty; De Gendt, Stefan; Heyns, Marc; Maes, Jos; Tuominen, Marko; Haukka, S. (2001) -
Characterization of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
Nohira, Hiroshi; Tsai, Wilman; Besling, Wim; Young, Edward; Pétry, Jasmine; Conard, Thierry; Vandervorst, Wilfried; De Gendt, Stefan; Heyns, Marc; Maes, Jos; Tuominen, Marko (2001) -
Gate stack preparation with high-k materials in a cluster tool
De Gendt, Stefan; Heyns, Marc; Conard, Thierry; Nohira, Hiroshi; Richard, Olivier; Vandervorst, Wilfried; Caymax, Matty; Maes, Jos; Tuominen, Marko; Bajolet, Philippe (2001) -
In-line electrical metrology for high-k gate dielectrics deposited by atomic layer CVD
De Witte, Hilde; Passefort, Sophie; Besling, Wim; Maes, Jos; Eason, K.; Young, Edward; Heyns, Marc (2002) -
Infrared interface analysis of high-k dielectrics deposited by atomic layer chemical vapour deposition
Cosnier, Vincent; Bender, Hugo; Caymax, Matty; Chen, Jian; Conard, Thierry; Nohira, Hiroshi; Richard, Olivier; Tsai, Wilman; Vandervorst, Wilfried; Young, Edward; Zhao, Chao; De Gendt, Stefan; Heyns, Marc; Maes, Jos; Tuominen, Marko; Rochat, N.; Olivier, M.; Chabli, A. (2001) -
Interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition
Tsai, Wilman; Nohira, Hiroshi; Carter, Richard; Caymax, Matty; Conard, Thierry; De Gendt, Stefan; Heyns, Marc; Pétry, Jasmine; Richard, Olivier; Vandervorst, Wilfried; Young, Edward; Zhao, Chao; Maes, Jos; Tuominen, Marko (2001) -
Physical characterization of high-k gate stacks deposited on HF-last surfaces
Bender, Hugo; Conard, Thierry; Nohira, Hiroshi; Pétry, Jasmine; Richard, Olivier; Zhao, Chao; Brijs, Bert; Besling, Wim; Detavernier, C.; Vandervorst, Wilfried; Caymax, Matty; De Gendt, Stefan; Chen, Jian; Kluth, Jon; Tsai, Wilman; Maes, Jos (2001) -
Stabilization of amorphous structures in ALCVD high-k oxide layers
Zhao, Chao; Richard, Olivier; Bender, Hugo; Young, Edward; Carter, Richard; Tsai, Wilman; Caymax, Matty; De Gendt, Stefan; Heyns, Marc; Roebben, G.; Van der Biest, O.; Maes, Jos; Tuominen, Marko; Haukka, S. (2001) -
Structural characterization of ALCVD ZrO2/Al2O3 nano-laminate deposits with high temperature grazing incidence XRD and TEM
Zhao, Chao; Richard, Olivier; Maes, Jos; Roebben, G.; Bender, Hugo; De Gendt, Stefan; Caymax, Matty; Vandervorst, Wilfried; Heyns, Marc; Van Der Biest, O. (2002) -
The effect of Pb stoichiometry on switching behavior of Pt/PZT/Pt ferroelectric capacitors
Norga, Gerd; Maes, Jos; Coppye, Erwin; Fè, Laura; Wouters, D.; Van Der Biest, O. (2000)