Browsing by author "Ryan, Paul"
Now showing items 1-13 of 13
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Asymmetric relaxation of SiGe in patterned Si line structures
Wormington, Matthew; Lafford, Tamzin; Godny, Stephane; Ryan, Paul; Loo, Roger; Bhouri, Nada; Caymax, Matty (2007) -
High resolution X-ray diffraction for in-line monitoring of Ge MOSFET devices
Ryan, Paul; Womington, Matthew; Sun, Jianwu; Hikavyy, Andriy; Shimura, Yosuke; Witters, Liesbeth; Tielens, Hilde; Schulze, Andreas; Loo, Roger (2015) -
In-line characterization of heterojunction bipolar transistor base layers by high-resolution X-ray diffraction
Nguyen, Duy; Loo, Roger; Hikavyy, Andriy; Van Daele, Benny; Ryan, Paul; Wormington, Matthew; Hopkins, John (2007) -
In-line characterization of heterojunction bipolar transistor base layers by high-resolution x-ray diffraction
Nguyen, Duy; Loo, Roger; Hikavyy, Andriy; Van Daele, Benny; Ryan, Paul; Wormington, Paul; Hopkins, John (2007) -
Observation and understanding of anisotropic strain relaxation in selectively grown SiGe fin structures
Schulze, Andreas; Loo, Roger; Ryan, Paul; Wormington, Matthew; Favia, Paola; Witters, Liesbeth; Collaert, Nadine; Vandervorst, Wilfried; Caymax, Matty (2017) -
Processing technologies for advanced Ge devices
Loo, Roger; Hikavyy, Andriy; Witters, Liesbeth; Schulze, Andreas; Arimura, Hiroaki; Cott, Daire; Mitard, Jerome; Porret, Clément; Mertens, Hans; Ryan, Paul; Wall, John; Matney, Kevin; Wormington, Matthew; Favia, Paola; Richard, Olivier; Bender, Hugo; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron (2016-09) -
Processing technologies for advanced Ge devices
Loo, Roger; Hikavyy, Andriy; Witters, Liesbeth; Schulze, Andreas; Arimura, Hiroaki; Cott, Daire; Porret, Clément; Mertens, Hans; Ryan, Paul; Wall, John; Matney, Kevin; Wormington, Matthew; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron (2016-10) -
Processing technologies for advanced Ge devices
Loo, Roger; Hikavyy, Andriy; Witters, Liesbeth; Schulze, Andreas; Arimura, Hiroaki; Cott, Daire; Mitard, Jerome; Porret, Clément; Mertens, Hans; Ryan, Paul; Wall, John; Matney, Kevin; Wormington, Matthew; Favia, Paola; Richard, Olivier; Thean, Aaron; Horiguchi, Naoto; Collaert, Nadine (2017) -
Selective-area metal organic vapor-phase epitaxy of InGaAs/InP heterostructures on Si for advanced CMOS devices
Merckling, Clement; Waldron, Niamh; Jiang, Sijia; Guo, Weiming; Ryan, Paul; Collaert, Nadine; Caymax, Matty; Barla, Kathy; Heyns, Marc; Thean, Aaron; Vandervorst, Wilfried (2014) -
Strain and composition monitoring in various (Si)Ge fin structures using in-line HRXRD
Schulze, Andreas; Loo, Roger; Witters, Liesbeth; Mertens, Hans; Collaert, Nadine; Horiguchi, Naoto; Wormington, Matthew; Ryan, Paul; Vandervorst, Wilfried; Caymax, Matty (2017) -
Strain and compositional analysis of (Si)Ge fin structures using high resolution X-ray diffraction
Schulze, Andreas; Loo, Roger; Witters, Liesbeth; Mertens, Hans; Gawlik, Andrzej; Horiguchi, Naoto; Collaert, Nadine; Wormington, Matthew; Ryan, Paul; Vandervorst, Wilfried; Caymax, Matty (2017) -
Use of X-ray techniques in the development and production of novel transistor structures
Hikavyy, Andriy; Rosseel, Erik; Witters, Liesbeth; Mertens, Hans; Ryan, Paul; Langer, Robert; Loo, Roger (2014) -
Use of X-ray techniques in the development of Ge MOSFET devices
Sun, Jianwu; Hikavyy, Andriy; Shimura, Yosuke; Witters, Liesbeth; Tielens, Hilde; Ryan, Paul; Loo, Roger (2014)