Browsing by author "Langouche, G."
Now showing items 1-20 of 52
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Backscattering/channeling study of high dose rare-earth implants in Si
Vantomme, Andre; Wu, Ming Fang; Wahl, U.; Pattyn, Hugo; Bender, Hugo; Langouche, G. (1997) -
Backscattering/channeling study of high-dose rare-earth implants into Si
Vantomme, Andre; Wahl, U.; Wu, Ming Fang; Hogg, S.; Pattyn, Hugo; Langouche, G.; Bender, Hugo (1998) -
Co silicide formation on SiGeC/Si and SiGe/Si layers
Donaton, R. A.; Maex, Karen; Vantomme, Andre; Langouche, G.; Morciaux, Y.; St. Amour, A.; Sturm, J. C. (1997) -
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
Vantomme, Andre; Wu, Ming Fang; Hogg, S.; Langouche, G.; Jacobs, Koen; Moerman, Ingrid; White, M. E.; O'Donnell, K. P.; Nistor, Leona; Van Landuyt, J.; Bender, Hugo (2000) -
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
Vantomme, Andre; Wu, Ming Fang; Hogg, S.; Langouche, G.; Jacobs, Koen; Moerman, Ingrid; White, M. E.; O'Donnell, K. P.; Nistor, Leona; Van Landuyt, J.; Bender, Hugo (2000) -
Comprehensive Rutherford backscattering and channeling study of ion-beam-synthesized ErSi1.7 layers
Wu, Ming Fang; Vantomme, Andre; De Wachter, Jo; Degroote, S.; Pattyn, Hugo; Langouche, G.; Bender, Hugo (1996) -
Crystalline quality and phase stability of hexagonal GdSi1.7 layers formed by ion beam synthesis
Wu, Ming Fang; Vantomme, Andre; Pattyn, Hugo; Langouche, G.; Bender, Hugo (1996) -
Determination of the decay rate of photoionized Te atoms implanted in GaAs and Al0.3Ga0.7As
Bemelmans, Hilde; Borghs, Gustaaf; Langouche, G. (1994) -
Direct determination of the composition and elastic strain in InGaN and AlGaN layers
Vantomme, Andre; Wu, Ming Fang; Hogg, S.; Langouche, G.; Yao, S.; Jacobs, Koen; Moerman, Ingrid; Li, J.; Zhang, G. Y. (1999) -
Effects of growth parameters on the epitaxy of CoSi2//Si(100) formed by reactive deposition epitaxy
Vantomme, Andre; Degroote, S.; Dekoster, J.; Bender, Hugo; Langouche, G. (1996) -
Elastic strain in In0.18Ga0.82N layer: a combined x-ray diffraction and Rutherford backscattering/channeling study
Wu, Ming Fang; Vantomme, Andre; Hogg, S. M.; Langouche, G.; Van der Stricht, Wim; Jacobs, Koen; Moerman, Ingrid (1999) -
Elastic strain in InGaN and AlGaN layers
Wu, Ming Fang; Yao, S.; Vantomme, Andre; Hogg, S.; Langouche, G.; Van der Stricht, Wim; Jacobs, Koen; Moerman, Ingrid; Li, J.; Zhang, G. Y. (1999) -
Elastic strain in InGaN and AlGaN layers
Wu, Ming Fang; Vantomme, Andre; Hogg, S.; Langouche, G.; Van der Stricht, Wim; Jacobs, Koen; Moerman, Ingrid; Li, J.; Zhang, G. Y. (2000) -
Epitaxial growth of Gd silicides prepared by channeled ion implantation
Jin, S.; Bender, Hugo; Wu, Ming Fang; Vantomme, Andre; Pattyn, Hugo; Langouche, G. (1997) -
Formation and microstructure of cubic metastable iron silicides synthesized during pulsed laser annealing
Falepin, Annelies; Cottenier, S.; Comrie, C.M.; Richard, Olivier; Bender, Hugo; Langouche, G.; Vantomme, Andre (2003) -
Formation and thermal stability of Nd0.32Y0.68Si1.7 layers formed by channeled ion beam synthesis
Wu, Ming Fang; Vantomme, Andre; Hogg, S.; Pattyn, H.; Langouche, G.; Jin, S.; Bender, Hugo (1998) -
Formation of (Nd,Y)-silicides by sequential channeled implantation of Y and Nd ions
Jin, Sing; Bender, Hugo; Wu, Ming Fang; Vantomme, Andre; Langouche, G. (2000) -
Formation of continuous and ultra-thin PtSi layers for infrared detector applications
Donaton, R. A.; Jin, S.; Bender, Hugo; Maex, Karen; Vantomme, Andre; Langouche, G. (1998) -
Formation of ultra-thin PtSi layers with a 2-step silicidation process
Donaton, R. A.; Jin, S.; Bender, Hugo; Zagrebnov, Maxim; Baert, Kris; Maex, Karen; Vantomme, Andre; Langouche, G. (1997) -
Growth and Properties of Ion Beam Synthesized Si/CoxN1-xSi2/Si (111) Structures
Wu, Ming Fang; De Wachter, Jo; Van Bavel, Mieke; Pattyn, Hugo; Langouche, G.; Vanhellemont, Jan; Bender, Hugo; Temst, K.; Wuyts, Bart; Bruynseraede, Y. (1994)