Browsing by author "Henson, Kirklen"
Now showing items 1-20 of 42
-
45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm
Henson, Kirklen; Lander, Rob; Demand, Marc; Dachs, Charles; Kaczer, Ben; Deweerd, Wim; Schram, Tom; Tokei, Zsolt; Hooker, Jacob; Cubaynes, Florence; Beckx, Stephan; Boullart, Werner; Coenegrachts, Bart; Vertommen, Johan; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; Kaiser, M.; Everaert, Jean-Luc; Jurczak, Gosia; Biesemans, Serge (2004) -
A comparison of spike, flash, SPER and laser annealing for 45nm CMOS
Lindsay, Richard; Pawlak, Bartek; Kittl, Jorge; Henson, Kirklen; Torregiani, Cristina; Giangrandi, Simone; Surdeanu, Radu; Vandervorst, Wilfried; Mayur, A.; Ross, J.; McCoy, S.; Gelpey, J.; Elliott, K.; Pagès, Xavier; Satta, Alessandra; Lauwers, Anne; Stolk, P.; Maex, Karen (2003) -
A practical baseline process for advanced CMOS devices research
Ponomarev, Youri; Loo, Josine; Rittersma, Chris; Lander, Rob; Hooker, Jacob; Doornbos, Gerben; Surdeanu, Radu; Cubaynes, Florence; Dachs, Charles; Kubicek, Stefan; Henson, Kirklen; Lindsay, Richard (2003) -
Advanced PMOS device architecture for highly-doped ultra-shallow junctions
Surdeanu, Radu; Pawlak, Bartek; Lindsay, Richard; Van Dal, Mark; Doornbos, Gerben; Dachs, C.J.J.; Ponomarev, Youri; Loo, Josine; Cubaynes, Florence; Henson, Kirklen; Verheijen, M.A.; Kaiser, M.; Pagès, Xavier; Stolk, Peter; Jurczak, Gosia (2004) -
Alternative gate insulator materials for future generation MOSFETs
Heyns, Marc; Bender, Hugo; Carter, Richard; Caymax, Matty; Conard, Thierry; De Gendt, Stefan; Degraeve, Robin; De Witte, Hilde; Groeseneken, Guido; Haukka, S.; Henson, Kirklen; Houssa, Michel; Kubicek, Stefan; Maes, Jos; Naili, Mohamed; Nohira, Hiroshi; Tsai, Wilman; Tuominen, Marko; Vandervorst, R.; Wilhelm, Rudi; Young, Edward; Zhao, Chao (2001) -
An effective model for analysing tunneling gate leakage currents through ultrathin oxides and high-k gate stacks from Si inversion layers
Govoreanu, Bogdan; Blomme, Pieter; Henson, Kirklen; Van Houdt, Jan; De Meyer, Kristin (2004) -
An investigation of the electron tunneling leakage current through ultrathin oxides/high-k gate stacks at inversion conditions
Govoreanu, Bogdan; Blomme, Pieter; Henson, Kirklen; Van Houdt, Jan; De Meyer, Kristin (2003) -
Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime
Henson, Kirklen; Yang, N.; Kubicek, Stefan; Vogel, E. M.; Wortman, J.; De Meyer, Kristin; Naem, Abdalla (2000) -
Arsenic junction thermal stability and high-dose boron-pocket activation during SPER in nMOS transistors
Severi, Simone; Pawlak, Bartek; Duffy, Ray; Augendre, Emmanuel; Henson, Kirklen; Lindsay, Richard; De Meyer, Kristin (2007) -
Challenges in scaling of CMOS devices towards 65nm node
Jurczak, Gosia; Veloso, Anabela; Rooyackers, Rita; Augendre, Emmanuel; Mertens, Sofie; Rothschild, Aude; Schaekers, Marc; Lindsay, Richard; Lauwers, Anne; Henson, Kirklen; Severi, Simone; Pollentier, Ivan; De Keersgieter, An (2003-06) -
Channel engineering and junction overlap issues for ultra-shallow junctions formed by SPER in the 45 nm CMOS technology node
Severi, Simone; Henson, Kirklen; Lindsay, Richard; Lauwers, Anne; Pawlak, Bartek; Surdeanu, Radu; De Meyer, Kristin (2004-04) -
Channel engineering towards a full low temperature process solution for the 45 nm technology node
Severi, Simone; Henson, Kirklen; Lindsay, Richard; Pawlak, Bartek; De Meyer, Kristin (2004) -
CMOS scaling beyond the 90 nm CMOS technology node: shallow junction and integration challenges
Dachs, Charles; Surdeanu, Radu; Pawlak, Bartek; Doornbos, Gerben; Duffy, R.; Heringa, Anco; Ponomarev, Youri; Venezia, Vincent; Van Dal, Mark; Stolk, P.; Lindsay, Richard; Henson, Kirklen; Dieu, B.; Geenen, Luc; Hoflijk, Ilse; Richard, Olivier; Clarysse, Trudo; Brijs, Bert; Vandervorst, Wilfried; Pagès, Xavier (2003) -
Demonstration of fully Ni-silicided metal gates on HfO2 based high-k gate dielectrics as a candidate for low power applications
Kottantharayil, Anil; Veloso, Anabela; Kubicek, Stefan; Schram, Tom; Augendre, Emmanuel; de Marneffe, Jean-Francois; Devriendt, Katia; Lauwers, Anne; Brus, Stephan; Henson, Kirklen; Biesemans, Serge (2004-06) -
Device characteristics of ultra-shallow junctions formed by fRTP annealing
Satta, Alessandra; Lindsay, Richard; Severi, Simone; Henson, Kirklen; Maex, Karen; McCoy, S.; Gelpey, J.; Elliott, K. (2004) -
Effects of pre-amorphization implantation (PAI) in ultra shallow junctions formed by SPER in deep sub-micron devices
Severi, Simone; Henson, Kirklen; Lindsay, Richard; De Meyer, Kristin (2004-01) -
Gate dielectrics for high performance and low power CMOS SoC applications
Cubaynes, Florence; Dachs, Charles; Detcheverry, Celine; Zegers, A.; Venezia, Vincent; Schmitz, Jurriaan; Stolk, Peter; Jurczak, Gosia; Henson, Kirklen; Degraeve, Robin; Rothschild, Aude; Conard, Thierry; Pétry, Jasmine; Da Rold, Martina; Schaekers, Marc; Badenes, Gonçal; Date, L.; Pique, D.; Al-Shareef, H.; Murto, R. (2002) -
High k dielectric materials prepared by atomic layer CVD
Heyns, Marc; Bender, Hugo; Carter, Richard; Caymax, Matty; Conard, Thierry; De Gendt, Stefan; Degraeve, Robin; De Witte, Hilde; Groeseneken, Guido; Haukka, S.; Henson, Kirklen; Houssa, Michel; Kubicek, Stefan; Maes, Guido; Naili, Mohamed; Nohira, Hiroshi; Tsai, Wilman; Tuominen, Marko; Vandervorst, Wilfried; Wilhelm, Rudi; Yang, E.; Zhao, Chao (2001) -
Impact of channel engineering technology on HC performance of 100 nm MOSFETs
Okhonin, S.; Fazan, P.; Kubicek, Stefan; Henson, Kirklen; De Meyer, Kristin; Ponomarev, Youri (2001) -
Implementation of high-k and metal gate materials for the 45nm node and beyond: gate patterning development
Beckx, Stephan; Demand, Marc; Locorotondo, Sabrina; Henson, Kirklen; Claes, Martine; Paraschiv, Vasile; Shamiryan, Denis; Jaenen, Patrick; Boullart, Werner; De Gendt, Stefan; Biesemans, Serge; Vanhaelemeersch, Serge; Vertommen, Johan; Coenegrachts, Bart (2005-06)