Browsing by author "Badenes, Gonçal"
Now showing items 1-20 of 75
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0.13µm CMOS technology with optimized poly-Si / NO-oxide gate stack
Kubicek, Stefan; Jansen, Philippe; Badenes, Gonçal; Schaekers, Marc; Kol'dyaev, Victor; Deferm, Ludo; De Meyer, Kristin; Kerr, Daniel; Naem, Abdalla (1999) -
60 MeV proton irradiation effects on NO-annealed and standard-oxide deep submicron MOSFETs
Simoen, Eddy; Hermans, Jan; Vereecken, Wim; Vermoere, Carl; Claeys, C.; Augendre, Emmanuel; Badenes, Gonçal; Mohammadzadeh, A. (2001) -
A high performance 0.18µm elevated source/drain technology with improved manufacturability
Augendre, Emmanuel; Rooyackers, Rita; Vandamme, Ewout; Perello, Carles; Van Dievel, Marc; Pochet, Sandrine; Badenes, Gonçal (1999) -
A high performance of 0.18μm CMOS technology designed for manufacturability
Badenes, Gonçal; Hendriks, Marton; Perello, Carles; Deferm, Ludo (1997) -
A new dummy-free shallow trench isolation concept for mixed-signal applications
Badenes, Gonçal; Rooyackers, Rita; Augendre, Emmanuel; Vandamme, Ewout; Perello, Carles; Heylen, Nancy; Grillaert, Joost; Deferm, Ludo (1999) -
A new dummy-free shallow trench isolation concept for mixed-signal applications
Badenes, Gonçal; Rooyackers, Rita; Augendre, Emmanuel; Vandamme, Ewout; Perello, Carles; Heylen, Nancy; Grillaert, Joost; Deferm, Ludo (2000) -
A novel approach for the elimination of the pattern density dependence of CMP for shallow trench isolation
Grillaert, Joost; Heylen, Nancy; Vrancken, Evi; Badenes, Gonçal; Rooyackers, Rita; Meuris, Marc; Heyns, Marc (1998) -
A simulation evaluation of 100 nm CMOS device performance
Jones, S. K.; Bazley, D. J.; Augendre, Emmanuel; Badenes, Gonçal; De Keersgieter, An; Skotnicki, T. (2001) -
Active area oxidation during the densification of shallow trench isolation for sub-0.25 micron CMOS
Bazley, D. J.; Jones, S. K.; Badenes, Gonçal (1998) -
Arsenic and phosphorus co-implantation for deep-submicron CMOS gate and source/drain engineering
Augendre, Emmanuel; De Keersgieter, An; Kubicek, Stefan; Redolfi, Augusto; Van Laer, Joris; Badenes, Gonçal (2001) -
Challenges for deep-submicron CMOS integration
Badenes, Gonçal; Deferm, Ludo (2000) -
Characteristics of low-energy nitrogen ion-implanted oxide and NO-annealed gate dielectrics
Lee, Shih Chung; Simoen, Eddy; Badenes, Gonçal (2004) -
Characterization and residue elimination of hot aluminum etching in a transformer coupled plasma etcher
Kopalidis, Peter; Vertommen, Johan; Badenes, Gonçal (1996) -
Controlling STI-related parasitic conduction in 90nm CMOS and below
Augendre, Emmanuel; Rooyackers, Rita; Shamiryan, Denis; Ravit, Claire; Jurczak, Gosia; Badenes, Gonçal (2002) -
Deep submicron CMOS scaling challenges
Badenes, Gonçal; Jurczak, Gosia (2002) -
Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy
Dombrowski, Kai; Fischer, A.; Dietrich, B.; De Wolf, Ingrid; Bender, Hugo; Pochet, Sandrine; Simons, Veerle; Rooyackers, Rita; Badenes, Gonçal; Stuer, Cindy; Van Landuyt, J. (1999) -
Determination of the film thickness of SIMOX substrates using simple calibration curves
Badenes, Gonçal; Losantos, P.; Cane, C.; Lora-Tamayo, E. (1997) -
Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3v3 compact model
Vandamme, Ewout; Schreurs, Dominique; van Dinther, Cees; Badenes, Gonçal; Deferm, Ludo (2002) -
Diode analysis of high-energy boron implantation-induced P-well defects
Poyai, Amporn; Simoen, Eddy; Claeys, Cor; Rooyackers, Rita; Badenes, Gonçal (2001) -
Direct measurement of Leff and channel profile in MOSFETs using 2-D carrier profiling techniques
De Wolf, Peter; Stephenson, Robert; Biesemans, Serge; Jansen, Philippe; Badenes, Gonçal; De Meyer, Kristin; Vandervorst, Wilfried (1998)