Browsing by author "Waltl, Michael"
Now showing items 1-20 of 25
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A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
Kaczer, Ben; Franco, Jacopo; Weckx, Pieter; Roussel, Philippe; Putcha, Vamsi; Bury, Erik; Simicic, Marko; Vaisman Chasin, Adrian; Linten, Dimitri; Parvais, Bertrand; Catthoor, Francky; Rzepa, Gerhard; Waltl, Michael; Grasser, Tibor (2018) -
Comphy v3.0-A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices
Waldhoer, Dominic; Schleich, Christian; Michl, Jakob; Grill, Alexander; Claes, Dieter; Karl, Alexander; Knobloch, Theresia; Rzepa, Gerhard; Franco, Jacopo; Kaczer, Ben; Waltl, Michael; Grasser, Tibor (2023) -
Complete extraction of defect bands responsible for instabilities in n and pFinFETs
Rzepa, Gerhard; Waltl, Michael; Goes, Wolfgang; Kaczer, Ben; Franco, Jacopo; Chiarella, Thomas; Horiguchi, Naoto; Grasser, Tibor (2016) -
Efficient Modeling of Charge Trapping a Cryogenic Temperatures-Part II: Experimental
Michl, Jakob; Grill, Alexander; Waldhoer, Dominic; Goes, Wolfgang; Kaczer, Ben; Linten, Dimitri; Parvais, Bertrand; Govoreanu, Bogdan; Radu, Iuliana; Grasser, Tibor; Waltl, Michael (2021) -
Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory
Michl, Jakob; Grill, Alexander; Waldhoer, Dominic; Goes, Wolfgang; Kaczer, Ben; Linten, Dimitri; Parvais, Bertrand; Govoreanu, Bogdan; Radu, Iuliana; Waltl, Michael; Grasser, Tibor (2021) -
Extraction of statistical gate oxide parameters from large MOSFET arrrays
Stampfer, Bernhard; Simicic, Marko; Weckx, Pieter; Abbasi, Arash; Kaczer, Ben; Grasser, Tibor; Waltl, Michael (2020) -
First–principles parameter–free modeling of n– and p–FET hot–carrier degradation
Jech, Markus; Tyaginov, Stanislav; Kaczer, Ben; Franco, Jacopo; Jabs, Dominic; Jungemann, Christoph; Waltl, Michael; Grasser, Tibor (2019) -
Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: from single defects to lifetimes
Grasser, Tibor; Waltl, Michael; Wimmer, Yannick; Goes, Wolfgang; Kosik, R.; Rzepa, Gerhard; Resinger, Hans; Pobegen, Gregor; El-Sayed, A.; Shluger, A.; Kaczer, Ben (2015) -
Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics – Part II: theory
Jech, Markus; Ulmann, Bianka; Rzepa, Gerhard; Tyaginov, Stanislav; Grill, Alexander; Waltl, Michael; Jabs, Dominic; Jungemann, Christoph; Grasser, Tibor (2019) -
Microscopic oxide defects causing BTI, RTN, and SILC on high-K FinFETs
Rzepa, Gerhard; Waltl, Michael; Goes, Wolfgang; Kaczer, Ben; Grasser, Tibor (2015) -
Mixed hot-carrier/bias temperature instability degradation regimes in full {VG, VD} bias space: implications and peculiarities
Jech, Markus; Rott, Gunnar; Reisinger, Hans; Tyaginov, Stanislav; Rzepa, Gerhard; Grill, Alexander; Jabs, Dominic; Jungemann, Christoph; Waltl, Michael; Grasser, Tibor (2020) -
Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors
Vasilev, Alexander; Jech, Markus; Grill, Alexander; Rzepa, Gerhard; Schleich, Christian; Makarov, Alexander; Pobegen, Gregor; Grasser, Tibor; Waltl, Michael; Tyaginov, Stanislav (2020) -
Nanoscale evidence for the superior reliability of SiGe high-k pMOSFETs
Waltl, Michael; Grill, Alexander; Rzepa, Gerhard; Goes, Wolfgang; Franco, Jacopo; Kaczer, Ben; Mitard, Jerome; Grasser, Tibor (2016) -
On the volatility of oxide defects: activation, deactivation, and transformation
Grasser, Tibor; Waltl, Michael; Goes, Wolfgang; Wimmer, Yanick; El-Sayed, A.-M.; Shluger, A.; Kaczer, Ben (2015) -
Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?
Waltl, Michael; Knobloch, Theresia; Tselios, Konstantinos; Filipovic, Lado; Stampfer, Bernhard; Hernandez, Yoanlys; Waldhor, Dominic; Illarionov, Yury; Kaczer, Ben; Grasser, Tibor (2022) -
Physical modeling of bias temperature instabilities in SiC MOSFETs
Schleich, Christian; Berens, Judith; Rzepa, Gerhard; Pobegen, Gregor; Rescher, Gerald; Tyaginov, Stanislav; Grasser, Tibor; Waltl, Michael (2019) -
Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices
Jech, Markus; El-Sayed, Al-Moatasem; Tyaginov, Stanislav; Waldhoer, Dominic; Bouakline, Foudhil; Saalfrank, Peter; Jabs, Dominic; Jungemann, Christoph; Waltl, Michael; Grasser, Tibor (2021-01) -
Reduction of the BTI time-dependent variability in nanoscaled MOSFETs by body bias
Franco, Jacopo; Kaczer, Ben; Toledano Luque, Maria; Roussel, Philippe; Groeseneken, Guido; Schwarz, Benedikt; Bina, Markus; Waltl, Michael; Wagner, Paul-Juergen; Grasser, Tibor (2013) -
Separation of electron and hole trapping components of PBTI in SiON nMOS transistors
Waltl, Michael; Stampfer, Bernhard; Rzepa, Gerhard; Kaczer, Ben; Grasser, Tibor (2020) -
Single-Versus Multi-Step Trap Assisted Tunneling Currents-Part II: The Role of Polarons
Schleich, Christian; Waldhoer, Dominic; El-Sayed, Al-Moatasem; Tselios, Konstantinos; Kaczer, Ben; Grasser, Tibor; Waltl, Michael (2022)