Browsing by author "Grasser, T."

A Comprehensive Cryogenic CMOS Variability and Reliability Assessment using Transistor Arrays

Grill, Alexander; Michl, J.; Diaz Fortuny, Javier; Beckers, Arnout; Bury, Erik; Vaisman Chasin, Adrian; Grasser, T.; Waltl, M.; Kaczer, Ben; De Greve, Kristiaan (2023)

A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer NMOSFETs

Sharma, P.; Tyaginov, S.; Rauch, S.E.; Franco, Jacopo; Kaczer, Ben; Makarov, A.; Vexler, M.I.; Grasser, T. (2016)

A reliable method for the extraction of the lateral position of defects in ultra-scaled MOSFETs

Illarionov, Yu. Yu.; Bina, M.; Tyaginov, S. E.; Rott, K.; Reisinger, H.; Kaczer, Ben; Grasser, T. (2014)

A rigorous study of measurement techniques for negative bias temperature instability

Grasser, T.; Wagner, P. J.; Hehenberger, P.; Goes, W.; Kaczer, Ben (2008-09)

Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking

Franco, Jacopo; de Marneffe, Jean-Francois; Vandooren, Anne; Kimura, Yosuke; Nyns, Laura; Wu, Zhicheng; El-Sayed, A-M; Jech, M.; Waldhoer, D.; Claes, Dieter; Arimura, Hiroaki; Ragnarsson, Lars-Ake; Afanas'ev, V.; Stesmans, A.; Horiguchi, Naoto; Linten, Dimitri; Grasser, T.; Kaczer, Ben (2020)

Benchmarking time-dependent variability of junctionless nanowire FETs

Kaczer, Ben; Rzepa, G.; Franco, Jacopo; Weckx, Pieter; Vaisman Chasin, Adrian; Putcha, Vamsi; Bury, Erik; Simicic, Marko; Roussel, Philippe; Hellings, Geert; Veloso, Anabela; Matagne, Philippe; Grasser, T.; Linten, Dimitri (2017)

Characterization and modeling of charge trapping: From single defects to devices

Grasser, T.; Rzepa, G.; Waltl, M.; Goes, W.; Rott, K.; Rott, G.; Reisinger, H.; Franco, Jacopo; Kaczer, Ben (2014)

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors

Grasser, T.; Stampfer, B.; Waltl, M.; Rzepa, G.; Rupp, K.; Schanovsky, F.; Pobegen, G.; Puschkarsky, K.; Reisinger, H.; O'Sullivan, Barry; Kaczer, Ben (2018)

Circuit simulation of workload-dependent RTN and BTI based on trap kinetics

Camargo, V. V. A.; Kaczer, Ben; Grasser, T.; Wirth, G. (2014)

COMPHY - A compact-physics framework for unified modeling of BTI

Rzepa, Gerhard; Franco, Jacopo; O'Sullivan, Barry; Subirats, Alexandre; Simicic, Marko; Hellings, Geert; Weckx, Pieter; Jech, M.; Knobloch, T.; Waltl, M.; Roussel, Philippe; Linten, Dimitri; Kaczer, Ben; Grasser, T. (2018)

Critical modeling issues in negative bias temperature instability

Grasser, T.; Kaczer, Ben (2009)

CV Stretch-Out Correction after Bias Temperature Stress: Work-function Dependence of Donor-/Acceptor-like Traps, Fixed Charges, and Fast States

Grasser, T.; O'Sullivan, Barry; Kaczer, Ben; Franco, Jacopo; Stampfer, B.; Waltl, M. (2021)

Defect creation stimulated by thermally activated hole trapping as the driving force behind negative bias temperature instability in SiO2, SiON, and high-k gate stacks

Grasser, T.; Kaczer, Ben; Aichinger, T.; Goes, W.; Nelhiebel, M. (2008)

Efficient physical defect model applied to PBTI in high-k stacks

Rzepa, G.; Franco, Jacopo; Subirats, Alexandre; Jech, M.; Vaisman Chasin, Adrian; Grill, A.; Waltl, M.; Knobloch, T.; Stampfer, B.; Chiarella, Thomas; Horiguchi, Naoto; Ragnarsson, Lars-Ake; Linten, Dimitri; Grasser, T.; Kaczer, Ben (2017)

Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS

Michl, J.; Grill, Alexander; Stampfer, B.; Waldhoer, D.; Schleich, C.; Knobloch, T.; Ioannidis, E.; Enichlmair, H.; Minixhofer, R.; Kaczer, Ben; Parvais, Bertrand; Govoreanu, Bogdan; Radu, Iuliana; Grasser, T.; Waltl, M. (2021)

From mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation

Toledano Luque, Maria; Kaczer, Ben; Franco, Jacopo; Roussel, Philippe; Grasser, T.; Hoffmann, Thomas Y.; Groeseneken, Guido (2011)