Browsing by author "Petry, Jasmine"
Now showing items 21-40 of 42
-
Microstructural and electrical characterization of thin dielectrica with high k values
Petry, Jasmine (2005-04) -
N-type VT tuning by Te ion implantation in moly-based metal gates with high-k dielectric for fully depleted devices
Petry, Jasmine; Boccardi, Guillaume; Xiong, K.; Mueller, Markus; Hooker, Jacob; Singanamalla, Raghunath; Collaert, Nadine; De Meyer, Kristin (2008) -
Nanoscale electrical characterization of HfO2/SiO2/MOS gate stackx with enhanced-CAFM
Nafria, M.; Blasco, X.; Porti, M.; Aguilera, L.; Aymerich, X.; Petry, Jasmine; Vandervorst, Wilfried (2005) -
Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by enhanced-CAFM
Blasco, X.; Nafria, M.; Aymerich, X.; Petry, Jasmine; Vandervorst, Wilfried (2005) -
On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers
Petry, Jasmine; Vandervorst, Wilfried; Pantisano, Luigi; Degraeve, Robin (2004) -
On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers
Petry, Jasmine; Vandervorst, Wilfried; Pantisano, Luigi; Degraeve, Robin (2005) -
On the nature of weak spots in high-k layers submitted to anneals
Petry, Jasmine; Vandervorst, Alain; Richard, Olivier; Conard, Thierry; Dewolf, P.; Kaushik, Vidya; Delabie, Annelies; Van Elshocht, Sven (2004) -
Performance enhancement of Poly-Si/TiN/SiON based pMOSFETs by addition of an AlO capping layer
Singanamalla, Raghunath; Yu, HongYu; O'Sullivan, Barry; Petry, Jasmine; Mercha, Abdelkarim; Paraschiv, Vasile; Volders, Henny; Kubicek, Stefan; De Meyer, Kristin; Biesemans, Serge (2007) -
Physical characterization of mixed HfAlOx layers by complementary analysis techniques
Bender, Hugo; Conard, Thierry; Richard, Olivier; Brijs, Bert; Petry, Jasmine; Vandervorst, Wilfried; Defranoux, C.; Boher, P.; Rochat, N.; Wyon, C.; Mack, P.; Wolstenholme, J.; Vitchev, E.; Houssiau, L.; Pireaux, J-J.; Bergmaier, A.; Dollinger, G. (2004) -
Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques
Bender, Hugo; Conard, Thierry; Richard, Olivier; Brijs, Bert; Petry, Jasmine; Vandervorst, Wilfried; Defranoux, C.; Boher, P.; Rochat, N.; Wyon, C.; Mack, P.; Wolstenholme, J.; Vitchev, R.; Houssiau, L.; Pireaux, J.J.; Bergmaier, A.; Dollinger, G. (2003) -
Physical characterization of ultrathin high k dielectrics
Vandervorst, Wilfried; Brijs, Bert; Bender, Hugo; Conard, Thierry; Petry, Jasmine; Richard, Olivier; Van Elshocht, Sven; Delabie, Annelies; Caymax, Matty; De Gendt, Stefan; Cosnier, Vincent; Green, Martin; Chen, Jerry (2003) -
Physical characterization of ultrathin high k dielectrics
Vandervorst, Wilfried; Brijs, Bert; Bender, Hugo; Conard, Thierry; Petry, Jasmine; Richard, Olivier; Van Elshocht, Sven; Delabie, Annelies; Caymax, Matty; De Gendt, Stefan (2003) -
Physical characterization of ultrathin high k dielectrics
Vandervorst, Wilfried; Brijs, Bert; Bender, Hugo; Conard, Thierry; Petry, Jasmine; Richard, Olivier; Van Elshocht, Sven; Delabie, Annelies; Caymax, Matty; De Gendt, Stefan (2003) -
Reduction of the anomalous VT behavior in MOSFETs with High-k/metal gate stacks
Ferain, Isabelle; Pantisano, Luigi; Kottantharayil, Anil; Petry, Jasmine; Trojman, Lionel; Collaert, Nadine; Jurczak, Gosia; De Meyer, Kristin (2007) -
Reliability degradation of HfSiO gate dielectric layers: influence of nitridation
Vellianitis, G.; Petry, Jasmine; Hooker, Jacob; Delabie, Annelies; De Gendt, Stefan (2007) -
Scalability of MOCVD-deposited Hafnium oxide
Van Elshocht, Sven; Carter, Richard; Caymax, Matty; Claes, Martine; Conard, Thierry; Date, Lucien; De Gendt, Stefan; Kaushik, Vidya; Kerber, Andreas; Kluth, J.; Lujan, Guilherme; Petry, Jasmine; Pique, Didier; Richard, Olivier; Rohr, Erika; Shimamoto, Yasuhiro; Tsai, Wilman; Heyns, Marc (2003) -
Scaling of high-k dielectrics towards sub-1nm EOT
Heyns, Marc; Beckx, Stephan; Bender, Hugo; Blomme, Pieter; Boullart, Werner; Brijs, Bert; Carter, Richard; Caymax, Matty; Claes, Martine; Conard, Thierry; De Gendt, Stefan; Degraeve, Robin; Delabie, Annelies; Deweerd, Wim; Groeseneken, Guido; Henson, Kirklen; Kauerauf, Thomas; Kubicek, Stefan; Lucci, Luca; Lujan, Guilherme; Mentens, Jimmy; Pantisano, Luigi; Petry, Jasmine; Richard, Olivier; Röhr, Erika; Schram, Tom; Vandervorst, Wilfried; Van Doorne, Patrick; Van Elshocht, Sven; Westlinder, Jörgen; Witters, Thomas; Zhao, Chao; Cartier, Eduard; Chen, Jerry; Cosnier, Vincent; Green, Martin; Jang, Se Aug; Kaushik, Vidya; Kerber, Andreas; Kluth, Jon; Lin, Steven; Tsai, Wilman; Young, Edward; Manabe, Yukiko; Shimamoto, Yasuhiro; Bajolet, Philippe; De Witte, Hilde; Maes, Jan; Date, Lucien; Pique, Didier; Coenegrachts, Bart; Vertommen, Johan; Passefort, Sophie (2003) -
Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition
Tsai, Wilman; Carter, Richard; Nohira, Hiroshi; Caymax, Matty; Conard, Thierry; Cosnier, Vincent; De Gendt, Stefan; Heyns, Marc; Petry, Jasmine; Richard, Olivier; Vandervorst, Wilfried; Young, Edward; Zhao, Chao; Maes, Jan; Tuominen, M.; Schulte, W.H.; Garfunkel, E.; Gustafsson, T. (2003) -
The band structure of ALCVD AlZr- and AlHf-oxides as measured by XPS
Petry, Jasmine; Vandervorst, Wilfried; Conard, Thierry (2004) -
TOF-SIMS as a rapid diagnostic tool to monitor the growth mode of thin (high k) films
Conard, Thierry; Vandervorst, Wilfried; Petry, Jasmine; Zhao, Chao; Besling, W.; Nohira, Hiroshi; Richard, Olivier (2003)