Browsing by author "Rondas, Dirk"
Now showing items 1-13 of 13
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Demonstration of recessed SiGe S/D and inserted metal gate on HfO2 for high performance pFETs
Verheyen, Peter; Eneman, Geert; Rooyackers, Rita; Loo, Roger; Eeckhout, Lieve; Rondas, Dirk; Leys, Frederik; Snow, Jim; Shamiryan, Denis; Demand, Marc; Hoffmann, Thomas Y.; Goodwin, Michael; Fujimoto, Hiromasa; Ravit, Claire; Lee, Byeong Chan; Caymax, Matty; De Meyer, Kristin; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005-12) -
Enabling GeH4-HCl in-situ pre-epi clean: impact of water quality on HF last process performance
Wostyn, Kurt; Rondas, Dirk; Loo, Roger; Dhayalan, Sathish Kumar; Hikavyy, Andriy; Elskens, Wim; Vyncke, Alex; Mertens, Paul; Holsteyns, Frank; De Gendt, Stefan; Masaoka, Toru; Yoshida, Yukifumi; Bast, Gerhard; Simpson, Gavin (2015) -
Epitaxial Si, SiGe and Ge for high-performance devices
Loo, Roger; Hikavyy, Andriy; Vincent, Benjamin; Wang, Gang; Vanherle, Wendy; Gencarelli, Federica; Nguyen, Duy; Rosseel, Erik; Souriau, Laurent; Rondas, Dirk; Dekoster, Johan; Caymax, Matty (2010) -
Evaluating SiGe-on-Si epitaxial quality by inline surface light scattering: a case study on the impact of interfacial oxygen
Wostyn, Kurt; Kenis, Karine; Rondas, Dirk; Loo, Roger; Hikavyy, Andriy; Douhard, Bastien; Mertens, Paul; Holsteyns, Frank; De Gendt, Stefan; Simpson, Gavin; Bast, Gerhard; Swaminathan, Karthik (2014) -
Group IV Epi processing, evolution in CMOS from 90 to 10nm node
Loo, Roger; Dhayalan, Sathish Kumar; Hikavyy, Andriy; Ike, Shinichi; Rondas, Dirk; Rosseel, Erik; Shimura, Yosuke; Steenbergen, Johnny; Sun, Jianwu; Wang, Wei; Langer, Robert (2014) -
HF-last wet clean in combination with a low temperature GeH4-assisted HCl in-situ clean prior to Si0.8Ge0.2-on-Si epitaxial growth
Wostyn, Kurt; Dhayalan, Sathish Kumar; Hikavyy, Andriy; Loo, Roger; Douhard, Bastien; Moussa, Alain; Rondas, Dirk; Kenis, Karine; Mertens, Paul; Holsteyns, Frank; De Gendt, Stefan; Profijt, Harald (2014) -
Impact of Ge-oxide-scavenging on low-T steam oxidation and passivation of bi-axially strained Si0.75Ge0.25
Wostyn, Kurt; Ragnarsson, Lars-Ake; Arimura, Hiroaki; Vaisman Chasin, Adrian; Conard, Thierry; Rondas, Dirk; Loo, Roger; Holsteyns, Frank; Horiguchi, Naoto (2019-10) -
Impact of Ge-oxide-scavenging on low-T steam oxidation and passivation of bi-axially strained Si0.75Ge0.25
Wostyn, Kurt; Ragnarsson, Lars-Ake; Arimura, Hiroaki; Vaisman Chasin, Adrian; Conard, Thierry; Rondas, Dirk; Loo, Roger; Holsteyns, Frank; Horiguchi, Naoto (2019) -
Selective Ge removal from SiGe surface for Si-cap-free SiGe passivation
Wostyn, Kurt; Arimura, Hiroaki; Hikavyy, Andriy; Rondas, Dirk; Vaisman Chasin, Adrian; Conard, Thierry; Ragnarsson, Lars-Ake; Horiguchi, Naoto (2020) -
Selective oxidation of SiGe less than 50% versus Si using Low Temperature Steam Anneal at T less than or equal to 650°C
Wostyn, Kurt; Crovato, Nicola; Blancher, Ken; Van Bortel, Thomas; Kimura, Yosuke; Mertens, Hans; Vaisman Chasin, Adrian; Conard, Thierry; Douhard, Bastien; Meersschaut, Johan; Steenbergen, Johnny; Rondas, Dirk; Van Opstal, Tinneke; Hikavyy, Andriy; Milenin, Alexey; Loo, Roger; Holsteyns, Frank; Horiguchi, Naoto (2018-05) -
Study of SiGe cleaning
Komori, Kana; Wostyn, Kurt; Rondas, Dirk; Loyo Prado, Jana; Conard, Thierry; Loo, Roger; Ragnarsson, Lars-Ake; Horiguchi, Naoto; Holsteyns, Frank (2017) -
Towards Si-cap-free SiGe passivation: impact of surface preparation on low-pressure oxidation of SiGe
Wostyn, Kurt; Arimura, Hiroaki; Kimura, Yosuke; Hikavyy, Andriy; Rondas, Dirk; Conard, Thierry; Ragnarsson, Lars-Ake; Horiguchi, Naoto (2021) -
Use of a purged FOUP to improve H-terminated silicon surface stability prior to epitaxial growth
Wostyn, Kurt; Rondas, Dirk; Kenis, Karine; Loo, Roger; Hikavyy, Andriy; Douhard, Bastien; Mertens, Paul; Holsteyns, Frank; De Gendt, Stefan; D'Urzo, Lucia; Van Autryve, Luc (2014)