Browsing by author "De Roest, David"

A CAD-oriented analytical model for frequency-dependent series resistance and inductance of microstrip on-chip interconnect on silicon substrate

Ymeri, Hasan; Nauwelaers, Bart; Maex, Karen; Vandenberghe, S.; De Roest, David (2002)

A high-reliable Cu/ULK integration scheme using Metal Hard Mask and Low-k capping film

Travaly, Youssef; Tsutsue, M.; Ikeda, Atsushi; Verdonck, Patrick; Tokei, Zsolt; Willegems, Myriam; Van Aelst, Joke; Struyf, Herbert; Vereecke, Guy; Kesters, Els; Le, Quoc Toan; Claes, Martine; Heylen, Nancy; Sinapi, Fabrice; Richard, Olivier; De Roest, David; Kaneko, S; Kemeling, N; Fukazawa, A; Matsuki, N; Matsushita, K; Tsuji, N; Kagami, K; Sprey, Hessel; Beyer, Gerald (2007)

A new approach for the calculation of line capacitances of two-layer IC interconnects

Ymeri, Hasan; Nauwelaers, Bart; Maex, Karen; De Roest, David (2000)

A physics-based VLSI interconnect model including substrate and conductor skin effects

Ymeri, H.; Nauwelaers, Bart; Maex, Karen; De Roest, David (2004)

Accurate analytic expressions for frequency-dependent inductance and resistance of single on-chip interconnects on conductive silicon Substrate

Ymeri, Hasan; Nauwelaers, Bart; Maex, Karen; De Roest, David; Vandenberghe, S. (2002)

Admittance matrix calculations of on-chip interconnects on lossy silicon substrate using multilayer Green's function

Ymeri, Hasan; Nauwelaers, Bart; Maex, Karen; De Roest, David; Vandenberghe, S.; Stucchi, Michele (2001)

Advanced solutions for copper and low k technology

Beyer, Gerald; Baklanov, Mikhaïl; Brongersma, Sywert; De Roest, David; Donaton, R.; Grillaert, Joost; Lanckmans, Filip; Maenhoudt, Mireille; Maex, Karen; Richard, Emmanuel; Struyf, Herbert; Stucchi, Michele; Tokei, Zsolt; Van Hove, Marleen; Vervoort, Iwan (2000)

CAD-oriented analytic formulas for self and mutual capacitance of interconnects on an Si-SiO2 substrate

Ymeri, Hasan; Nauwelaers, Bart; Maex, Karen; Vandenberghe, S.; De Roest, David; Stucchi, Michele (2001)

Characterization and integration in Cu damascene structures of AURORA, an inorganic low-k dielectric

Alves Donaton, Ricardo; Coenegrachts, Bart; Sleeckx, Erik; Schaekers, Marc; Sophie, Guus; Matsuki, N.; Baklanov, Mikhaïl; Struyf, Herbert; Lepage, Muriel; Vanhaelemeersch, Serge; Beyer, Gerald; Stucchi, Michele; De Roest, David; Maex, Karen (2001)

Characterization and integration of a new Si-O-C film deposited by CVD

Alves Donaton, Ricardo; Struyf, Herbert; Lepage, Muriel; Coenegrachts, Bart; Stucchi, Michele; De Roest, David; Baklanov, Mikhaïl; Vanhaelemeersch, Serge; Maex, Karen; Gaillard, F.; Xia, L. Q.; Lim, T. H.; Gotuaco, M.; Yieh, E.; Van Autryve, Luc (2001)

Characterization and optimization of porogen based PECVD deposited extreme low-k materials as a function of UV-cure time

Verdonck, Patrick; De Roest, David; Kaneko, Shinya; Caluwaerts, Rudy; Tsuji, Naoto; Matsushita, Kiyohiro; Kemeling, Nathan; Travaly, Youssef; Sprey, Hessel; Schaekers, Marc; Beyer, Gerald (2007)

Critical issues in the integration of Copper and low-k dielectrics

Donaton, R. A.; Coenegrachts, Bart; Maex, Karen; Struyf, Herbert; Vanhaelemeersch, Serge; Beyer, Gerald; Richard, Emmanuel; Vervoort, Iwan; Fyen, Wim; Grillaert, Joost; van der Groen, Sonja; Stucchi, Michele; De Roest, David (1999)

Deposition and characterization of porogen based PECVD deposited and UV-cured extreme low-k materials

Verdonck, Patrick; De Roest, David; Kaneko, Shinya; Tsuji, Naoto; Matsushita, Kiyohiro; Travaly, Youssef; Sprey, Hessel; Schaekers, Marc; Beyer, Gerald (2007)

Dielectric reliability of 50nm half pitch structures in Aurora® LK

Demuynck, Steven; Kim, Honggun; Huffman, Craig; Darnon, Maxime; Struyf, Herbert; Versluijs, Janko; Claes, Martine; Vereecke, Guy; Verdonck, Patrick; Volders, Henny; Heylen, Nancy; Kellens, Kristof; De Roest, David; Sprey, Hessel; Beyer, Gerald (2009)

Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance

Marsik, Premysl; Urbanowicz, Adam; Verdonck, Patrick; De Roest, David; Sprey, Hessel; Baklanov, Mikhaïl (2011)

Electrical characteristics of P-type bulk Si fin field-effect transistor using solid-source doping with 1-nm phosphosilicate glass

Kikuchi, Yoshiaki; Chiarella, Thomas; De Roest, David; Blanquart, Timothee; De Keersgieter, An; Kenis, Karine; Peter, Antony; Ong, Patrick; Van Besien, Els; Tao, Zheng; Kim, Min-Soo; Kubicek, Stefan; Chew, Soon Aik; Schram, Tom; Demuynck, Steven; Mocuta, Anda; Mocuta, Dan; Horiguchi, Naoto (2016)