Browsing by author "Capogreco, Elena"
Now showing items 1-20 of 48
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80 nm tall thermally stable cost effective FinFETs for advanced dynamic random access memory periphery devices for artificial intelligence/machine learning and automotive applications
Spessot, Alessio; Ritzenthaler, Romain; Dentoni Litta, Eugenio; Dupuy, Emmanuel; O'Sullivan, Barry; Bastos, Joao; Capogreco, Elena; Miyaguchi, Kenichi; Machkaoutsan, Vladimir; Yoon, Younggwang; Fazan, Pierre; Horiguchi, Naoto (2021) -
80nm tall thermally stable cost effective FinFETs for advanced DRAM periphery devices for AI/ML and Automotive applications
Spessot, Alessio; Ritzenthaler, Romain; Dentoni Litta, Eugenio; Dupuy, Emmanuel; O'Sullivan, Barry; Bastos, Joao; Capogreco, Elena; Miyaguchi, Kenichi; Machkaoutsan, Vladimir; Yoon, Younggwang; Fazan, Pierre; Horiguchi, Naoto (2020) -
A record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation
Arimura, Hiroaki; Cott, Daire; Boccardi, Guillaume; Loo, Roger; Wostyn, Kurt; Brus, Stephan; Capogreco, Elena; Opdebeeck, Ann; Witters, Liesbeth; Conard, Thierry; Suhard, Samuel; van Dorp, Dennis; Kenis, Karine; Ragnarsson, Lars-Ake; Mitard, Jerome; Holsteyns, Frank; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine; Horiguchi, Naoto (2019-06) -
Addressing Key Challenges for SiGe-pFin Technologies: Fin Integrity, Low-D-IT Si-cap-free Gate Stack and Optimizing the Channel Strain
Arimura, Hiroaki; Capogreco, Elena; Wostyn, Kurt; Eneman, Geert; Ragnarsson, Lars-Ake; Brus, Stephan; Baudot, Sylvain; Peter, Antony; Schram, Tom; Favia, Paola; Richard, Olivier; Bender, Hugo; Mitard, Jerome; Horiguchi, Naoto (2020) -
Advantage of NW structure in preservation of SRB-induced strain and investigation of off-state leakage in strained stacked Ge NW pFET
Arimura, Hiroaki; Eneman, Geert; Capogreco, Elena; Witters, Liesbeth; De Keersgieter, An; Favia, Paola; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Bender, Hugo; Ragnarsson, Lars-Ake; Mitard, Jerome; Collaert, Nadine; Mocuta, Dan; Horiguchi, Naoto (2018) -
Alternative Channel Materials for 3-D NAND Memories
Capogreco, Elena (2017-09) -
An in-depth study of high-performing strained germanium nanaowires pFETs
Mitard, Jerome; Jang, Doyoung; Eneman, Geert; Arimura, Hiroaki; Parvais, Bertrand; Richard, Olivier; Van Marcke, Patricia; Witters, Liesbeth; Capogreco, Elena; Bender, Hugo; Ritzenthaler, Romain; Mertens, Hans; Hikavyy, Andriy; Loo, Roger; Dekkers, Harold; Sebaai, Farid; Horiguchi, Naoto; Mocuta, Anda; Collaert, Nadine (2018) -
Analysis of performance/variability trade-off in Macaroni-type 3-D NAND Memory
Congedo, Gabriele; Arreghini, Antonio; Liu, Lifang; Capogreco, Elena; Lisoni, Judit; Huet, Karim; Toque-Tresonne, Ines; Van Aerde, Steven; Toledano Luque, Maria; Tan, Chi Lim; Van den Bosch, Geert; Van Houdt, Jan (2014) -
Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery
Bastos, Joao; O'Sullivan, Barry; Franco, Jacopo; Tyaginov, Stanislav; Truijen, Brecht; Vaisman Chasin, Adrian; Degraeve, Robin; Kaczer, Ben; Ritzenthaler, Romain; Capogreco, Elena; Dentoni Litta, Eugenio; Spessot, Alessio; Higashi, Yusuke; Yoon, Younggwang; Machkaoutsan, Vladimir; Fazan, Pierre; Horiguchi, Naoto (2022) -
Buried Power Rail Integration for CMOS Scaling beyond the 3 nm Node
Gupta, Anshul; Tao, Zheng; Radisic, Dunja; Mertens, Hans; Varela Pedreira, Olalla; Demuynck, Steven; Boemmels, Juergen; Devriendt, Katia; Heylen, Nancy; Wang, Shouhua; Kenis, Karine; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; Jourdan, Nicolas; Chan, BT; Subramanian, Sujith; Schleicher, Filip; Peter, Antony; Rassoul, Nouredine; Siew, Yong Kong; Briggs, Basoene; Zhou, Daisy; Rosseel, Erik; Capogreco, Elena; Mannaert, Geert; Sepulveda Marquez, Alfonso; Dupuy, Emmanuel; Vandersmissen, Kevin; Chehab, Bilal; Murdoch, Gayle; Altamirano Sanchez, Efrain; Biesemans, Serge; Tokei, Zsolt; Dentoni Litta, Eugenio; Horiguchi, Naoto (2022) -
Buried power rail integration with FinFETs for ultimate CMOS scaling
Gupta, Anshul; Varela Pedreira, Olalla; Arutchelvan, Goutham; Zahedmanesh, Houman; Devriendt, Katia; Hanssen, Frederik; Tao, Zheng; Ritzenthaler, Romain; Wang, Shouhua; Radisic, Dunja; Kenis, Karine; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; Jourdan, Nicolas; Chan, BT; Subramanian, Sujith; Schleicher, Filip; Hopf, Toby; Peter, Antony; Rassoul, Nouredine; Debruyn, Haroen; Demonie, Ingrid; Siew, Yong Kong; Chiarella, Thomas; Briggs, Basoene; Zhou, Daisy; Rosseel, Erik; De Keersgieter, An; Capogreco, Elena; Dentoni Litta, Eugenio; Boccardi, Guillaume; Baudot, Sylvain; Mannaert, Geert; Bontemps, Noemie; Sepulveda Marquez, Alfonso; Mertens, Sofie; Kim, Min-Soo; Dupuy, Emmanuel; Vandersmissen, Kevin; Paolillo, Sara; Cousserier, Joris; Yakimets, Dmitry; Lazzarino, Frederic; Chehab, Bilal; Favia, Paola; Drijbooms, Chris; Jaysankar, Manoj; Morin, Pierre; Altamirano Sanchez, Efrain; Mitard, Jerome; Wilson, Chris; Holsteyns, Frank; Boemmels, Juergen; Demuynck, Steven; Tokei, Zsolt; Horiguchi, Naoto (2020) -
Buried Power Rail Integration with Si FinFETs for CMOS Scaling beyond the 5 nm Node
Gupta, Anshul; Mertens, Hans; Tao, Zheng; Demuynck, Steven; Boemmels, Juergen; Arutchelvan, Goutham; Devriendt, Katia; Varela Pedreira, Olalla; Ritzenthaler, Romain; Wang, Shouhua; Radisic, Dunja; Kenis, Karine; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; Jourdan, Nicolas; Chan, BT; Zahedmanesh, Houman; Subramanian, Sujith; Schleicher, Filip; Hopf, Toby; Peter, Antony; Rassoul, Nouredine; Debruyn, Haroen; Demonie, Ingrid; Siew, Yong Kong; Chiarella, Thomas; Briggs, Basoene; Zhou, Daisy; Rosseel, Erik; De Keersgieter, An; Capogreco, Elena; Dentoni Litta, Eugenio; Boccardi, Guillaume; Baudot, Sylvain; Mannaert, Geert; Bontemps, N.; Sepulveda Marquez, Alfonso; Mertens, Sofie; Kim, Min Soo; Dupuy, Emmanuel; Vandersmissen, Kevin; Paolillo, Sara; Yakimets, Dmitry; Chehab, Bilal; Favia, Paola; Drijbooms, Chris; Cousserier, Joris; Jaysankar, Manoj; Lazzarino, Frederic; Morin, Pierre; Altamirano Sanchez, Efrain; Mitard, Jerome; Wilson, Chris; Holsteyns, Frank; Tokei, Zsolt; Horiguchi, Naoto (2020) -
Channel and near channel defects characterization in vertical InxGa1-xAs high mobility channels for future 3D NAND memory
Subirats, Alexandre; Capogreco, Elena; Degraeve, Robin; Arreghini, Antonio; Van den Bosch, Geert; Linten, Dimitri; Van Houdt, Jan; Furnemont, Arnaud (2016) -
Characterizing grain size and defect energy distribution in vertical SONOS poly-Si channels by means of a resistive network model
Degraeve, Robin; Toledano Luque, Maria; Arreghini, Antonio; Tang, Baojun; Capogreco, Elena; Lisoni, Judit; Roussel, Philippe; Kaczer, Ben; Van den Bosch, Geert; Groeseneken, Guido; Van Houdt, Jan (2013) -
Combining TEM and 3D scanning spreading resistance microscopy, a hybrid approach, to the analysis of Ge gate-all-around nano-wires
Favia, Paola; Celano, Umberto; Drijbooms, Chris; Witters, Liesbeth; Arimura, Hiroaki; Capogreco, Elena; Vancoille, Eric; Bender, Hugo (2018) -
Direct three-dimensional observation of the conduction in poly-Si and In1-xGaxAs 3D NAND vertical channels
Celano, Umberto; Capogreco, Elena; Lisoni, Judit; Arreghini, Antonio; Kunert, Bernardette; Guo, Weiming; Van den Bosch, Geert; Van Houdt, Jan; De Meyer, Kristin; Furnemont, Arnaud; Vandervorst, Wilfried (2016) -
Electrical and physical characterization of Polycrystalline III-V compounds
Capogreco, Elena; Lisoni, Judit; Merckling, Clement; Numata, Toshinori; Arreghini, Antonio; De Meyer, Kristin; Van den Bosch, Geert; Van Houdt, Jan (2014) -
Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
Tomomi, Takayama; Taishi, Ebisudani; Eiichiro, Shiba; Sepulveda Marquez, Alfonso; Blanquart, Timothee; Kimura, Yosuke; Subramanian, Sujith; Baudot, Sylvain; Briggs, Basoene; Gupta, Anshul; Veloso, Anabela; Capogreco, Elena; Mertens, Hans; Meersschaut, Johan; Conard, Thierry; Dara, Praveen; Geypen, Jef; Martinez Alanis, Gerardo Tadeo; Batuk, Dmitry; Demuynck, Steven; Morin, Pierre (2021) -
Epitaxial growth of (Si)GeSn source-drain layers for advanced gate all around devices
Loo, Roger; Vohra, Anurag; Porret, Clément; Hikavyy, Andriy; Rosseel, Erik; Schaekers, Marc; Capogreco, Elena; Shimura, Yosuke; Kohen, David; Tolle, John; Vandervorst, Wilfried (2019) -
Epitaxial growth of (Si)GeSn source/drain layers for advanced gate all around devices
Loo, Roger; Vohra, Anurag; Porret, Clément; Hikavyy, Andriy; Rosseel, Erik; Schaekers, Marc; Capogreco, Elena; Shimura, Yosuke; Kohen, David; Tolle, John; Vandervorst, Wilfried (2019-09)