Browsing by author "Toledano Luque, Maria"
Now showing items 21-40 of 94
-
Correlation of single trapping and detrapping effects in drain and gate currents of nanoscaled nFETs and pFETs
Toledano Luque, Maria; Kaczer, Ben; Simoen, Eddy; Degraeve, Robin; Franco, Jacopo; Roussel, Philippe; Grasser, Tibor; Groeseneken, Guido (2012) -
Defect-based methodology for workload-dependent circuit lifetime projections – application to SRAM
Weckx, Pieter; Kaczer, Ben; Toledano Luque, Maria; Grasser, Tibor; Roussel, Philippe; Kukner, Halil; Raghavan, Praveen; Catthoor, Francky; Groeseneken, Guido (2013) -
Defect-centric perspective of time-dependent BTI variability
Toledano Luque, Maria; Kaczer, Ben; Franco, Jacopo; Roussel, Philippe; Grasser, Tibor; Groeseneken, Guido (2012) -
Degradation of time dependent variability due to interface state generation
Toledano Luque, Maria; Kaczer, Ben; Franco, Jacopo; Roussel, Philippe; Bina, Markus; Grasser, Tibor; Cho, Moon Ju; Weckx, Pieter; Groeseneken, Guido (2013) -
Depth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stress
Toledano Luque, Maria; Kaczer, Ben; Roussel, Philippe; Franco, Jacopo; Ragnarsson, Lars-Ake; Grasser, Tibor; Groeseneken, Guido (2011) -
Depth localization of trapped holes in SiON pMOSFETs after positive and negative gate stress
Toledano Luque, Maria; Kaczer, Ben; Roussel, Philippe; Degraeve, Robin; Franco, Jacopo; Kauerauf, Thomas; Grasser, Tibor; Groeseneken, Guido (2010) -
Direct tunneling and gate current fluctuations
Baumgartner, O.; Bina, M.; Goes, W.; Schanovsky, F.; Toledano Luque, Maria; Kaczer, Ben; Kosina, H.; Grasser, Tibor (2013) -
Evaluation and solutions for P/E window instability induced by electron trapping in high-k inter-gate dielectrics of flash memory cells
Tang, Baojun; Zhang, Weidong; Degraeve, Robin; Breuil, Laurent; Blomme, Pieter; Zhang, Jianfu; Ji, Zhigang; Zahid, Mohammed; Toledano Luque, Maria; Van den Bosch, Geert; Van Houdt, Jan (2014) -
Experimental characterization of BTI defects
Kaczer, Ben; Afanasiev, Valeri; Rott, Karina; Cerbu, F.; Franco, Jacopo; Grasser, Tibor; Madia, O.; Nguyen, A. P. D.; Stesmans, Andre; Resinger, Hans; Toledano Luque, Maria; Weckx, Pieter (2013) -
Experimental evidence toward understanding charge pumping signals in 3-D devices with Poly-Si channel
Tang, Baojun; Zhang, Weidong; Toledano Luque, Maria; Zhang, Jianfu; Degraeve, Robin; Ji, Zhigang; Arreghini, Antonio; Van den Bosch, Geert; Van Houdt, Jan (2014) -
Fast ramped voltage characterization of single trap bias and temperature impact on time-dependent VTH variability
Toledano Luque, Maria; Degraeve, Robin; Roussel, Philippe; Ragnarsson, Lars-Ake; Chiarella, Thomas; Horiguchi, Naoto; Mocuta, Anda; Thean, Aaron (2014-09) -
Fast VTH transients after the program/erase of flash memory stacks with high-k dielectrics
Toledano Luque, Maria; Degraeve, Robin; Zahid, Mohammed; Kaczer, Ben; Blomme, Pieter; Kittl, Jorge; Jurczak, Gosia; Van Houdt, Jan; Groeseneken, Guido (2011) -
From mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation
Toledano Luque, Maria; Kaczer, Ben; Franco, Jacopo; Roussel, Philippe; Grasser, T.; Hoffmann, Thomas Y.; Groeseneken, Guido (2011) -
Gate current random telegraph noise and single defect conduction
Kaczer, Ben; Toledano Luque, Maria; Goes, Wolfgang; Grasser, Tibor; Groeseneken, Guido (2013) -
High-k characterization by RFCV
San Andres Serrano, Enrique; Pantisano, Luigi; Roussel, Philippe; Toledano Luque, Maria; Trojman, Lionel; Severi, Simone; De Gendt, Stefan; Groeseneken, Guido (2007) -
Highly scalable bulk FinFET devices with multi-VT options by conductive metal gate stack tuning for the 10-nm node and beyond
Ragnarsson, Lars-Ake; Chew, Soon Aik; Dekkers, Harold; Toledano Luque, Maria; Parvais, Bertrand; De Keersgieter, An; Van Ammel, Annemie; Schram, Tom; Yoshida, Naomi; Phatak, Anup; Han, Keping; Colombeau, Benjamin; Brand, Adam; Horiguchi, Naoto; Thean, Aaron (2014) -
Impact of body bias on nanoscaled MOSFETs with individual trapped gate oxide charges
Franco, Jacopo; Kaczer, Ben; Toledano Luque, Maria; Roussel, Philippe; Ragnarsson, Lars-Ake; Eneman, Geert; Grasser, Tibor; Groeseneken, Guido (2011) -
Impact of individual charged gate oxide defects on the entire ID-VG characteristic of nanoscaled FETs
Franco, Jacopo; Kaczer, Ben; Toledano Luque, Maria; Bukhori, Muhammad Faiz; Roussel, Philippe; Grasser, Tibor; Asenov, Asen; Groeseneken, Guido (2012) -
Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs
Franco, Jacopo; Kaczer, Ben; Toledano Luque, Maria; Roussel, Philippe; Mitard, Jerome; Ragnarsson, Lars-Ake; Witters, Liesbeth; Chiarella, Thomas; Togo, Mitsuhiro; Horiguchi, Naoto; Groeseneken, Guido; Bukhori, M.F.; Grasser, T.; Asenov, A. (2012) -
Implications of BTI-induced time-dependent statistics on yield estimation of digital circuits
Weckx, Pieter; Kaczer, Ben; Toledano Luque, Maria; Raghavan, Praveen; Franco, Jacopo; Roussel, Philippe; Groeseneken, Guido; Catthoor, Francky (2014)