Browsing by author "Zhang, W."
Now showing items 1-15 of 15
-
A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias
Ji, Z.; Zhang, J.F.; Lin, L.; Duan, M.; Zhang, W.; Zhang, X.; Gao, R.; Kaczer, Ben; Franco, Jacopo; Schram, Tom; Horiguchi, Naoto; De Gendt, Stefan; Groeseneken, Guido (2015) -
AC NBTI of Ge pMOSFETs: impact of energy alternating defects on lifetime prediction
Ma, J.; Zhang, W.; Zhang, J.F.; Ji, Z.; Benbakhti, B.; Franco, Jacopo; Mitard, Jerome; Witters, Liesbeth; Collaert, Nadine; Groeseneken, Guido (2015) -
An assessment of the mobility degradation induced by remote charge scattering
Ji, Z.; Zhang, J.F.; Zhang, W.; Groeseneken, Guido; Pantisano, Luigi; De Gendt, Stefan; Heyns, Marc (2009) -
Defect loss: a new concept for reliability of MOSFETs
Duan, M.; Zhang, J. F.; Ji, Z.; Zhang, W.; Kaczer, Ben; De Gendt, Stefan; Groeseneken, Guido (2012) -
ESD characterization of planar InGaAs devices
Ji, Zhigang; Linten, Dimitri; Boschke, Roman; Hellings, Geert; Chen, Shih-Hung; Alian, AliReza; Zhou, Daisy; Mols, Yves; Ivanov, Tsvetan; Franco, Jacopo; Kaczer, Ben; Zhang, X.; Gao, R.; Zhang, J.F.; Zhang, W.; Collaert, Nadine; Groeseneken, Guido (2015) -
Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM
Duan, M.; Zhang, J. F.; Manut, A.; Ji, Z.; Zhang, W.; Asenov, A.; Gerrer, L.; Reid, D.; Razaidi, H.; Vigar, D.; Chandra, V.; Aitken, R.; Kaczer, Ben; Groeseneken, Guido (2015) -
Impact of RTN on pattern recognition accuracy of RRAM-based synaptic neural network
Chai, Z.; Freitas, P.; Zhang, W.; Hatem, F.; Zhang, J.; Marsland, J.; Govoreanu, Bogdan; Goux, Ludovic; Kar, Gouri Sankar (2018) -
Instability and defects in gate dielectric: similarity and differences between Hf-stacks and SiO2
Zhang, J.F.; Zhao, C.Z.; Chang, M.H.; Zhang, W.; Groeseneken, Guido; Pantisano, Luigi; De Gendt, Stefan; Heyns, Marc (2007) -
Interaction between hot carrier aging and PBTI degradation in nMOSFETs: characterization, modelling and lifetime prediction
Meng, D.; Zhang, J. F.; Zhang, J. C.; Zhang, W.; Ji, Z.; Benbakhti, B.; Zheng, X. F.; Hao, Y.; Vigar, D.; Adamu-Lema, F.; Chandra, V.; Aitken, R.; Kaczer, Ben; Groeseneken, Guido; Asenov, A. (2017) -
Key issues and techniques for characterizing time-dependent device-to-device variation of SRAM
Duan, M.; Zhang, J. F.; Ji, Z.; Ma, J. G.; Zhang, W.; Kaczer, Ben; Schram, Tom; Ritzenthaler, Romain; Groeseneken, Guido; Asenov, A. (2013) -
Negative bias temperature instability lifetime prediction: problems and solutions
Ji, Z.; Hatta, S. F. W. M.; Zhang, J. F.; Ma, G. M.; Zhang, W.; Soin, N.; Kaczer, Ben; De Gendt, Stefan; Groeseneken, Guido (2013) -
Predictive As-grown-generation (A-G) model for BTI-induced device/circuit level variations in nanoscale technology nodes
Gao, R.; Ji, Zhigang; Hatta, S.M.; Zhang, J.F.; Franco, Jacopo; Kaczer, Ben; Zhang, W.; Duan, M.; De Gendt, Stefan; Linten, Dimitri; Groeseneken, Guido; Bi, J.; Liu, M. (2016) -
Time-dependent variation: A new defect-based prediction methodology
Duan, M.; Zhang, J. F.; Ji, Z.; Zhang, W.; Kaczer, Ben; Schram, Tom; Ritzenthaler, Romain; Thean, Aaron; Groeseneken, Guido; Asenov, A. (2014) -
Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure
Ma, J; Zhang, J.F.; Ji, Z.; Benbakhti, B.; Duan, M.; Zhang, W.; Zheng, X.F.; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2013) -
Understanding charge traps for optimizing Si-passivated Ge nMOSFETs
Ren, Pengpeng; Gao, R.; Ji, Zhigang; Arimura, Hiroaki; Zhang, J. F.; Wang, R.; Duan, M.; Zhang, W.; Franco, Jacopo; Sioncke, Sonja; Cott, Daire; Mitard, Jerome; Witters, Liesbeth; Mertens, Hans; Kaczer, Ben; Mocuta, Anda; Collaert, Nadine; Linten, Dimitri; Huang, R.; Thean, Aaron; Groeseneken, Guido (2016)