Browsing by author "Duan, M."
Now showing items 1-12 of 12
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A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias
Ji, Z.; Zhang, J.F.; Lin, L.; Duan, M.; Zhang, W.; Zhang, X.; Gao, R.; Kaczer, Ben; Franco, Jacopo; Schram, Tom; Horiguchi, Naoto; De Gendt, Stefan; Groeseneken, Guido (2015) -
Defect loss: a new concept for reliability of MOSFETs
Duan, M.; Zhang, J. F.; Ji, Z.; Zhang, W.; Kaczer, Ben; De Gendt, Stefan; Groeseneken, Guido (2012) -
Development of a technique for characterizing bias temperature unstability-induced device-to-device variation at SRAM-relevant conditions
Duan, M.; Zhang, J. F.; Ji, Z.; Zhang, W. D.; Kaczer, Ben; Schram, Tom; Ritzenthaler, Romain; Groeseneken, Guido; Asenov, A. (2014) -
Energy distribution of positive charges in gate dielectric: probing technique and impacts of different defects
Hatta, S. W. M.; Ji, J.; Zhang, J. F.; Duan, M.; Zhang, W. D.; Soin, N.; Kaczer, Ben; De Gendt, Stefan; Groeseneken, Guido (2013) -
Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM
Duan, M.; Zhang, J. F.; Manut, A.; Ji, Z.; Zhang, W.; Asenov, A.; Gerrer, L.; Reid, D.; Razaidi, H.; Vigar, D.; Chandra, V.; Aitken, R.; Kaczer, Ben; Groeseneken, Guido (2015) -
Key issues and techniques for characterizing time-dependent device-to-device variation of SRAM
Duan, M.; Zhang, J. F.; Ji, Z.; Ma, J. G.; Zhang, W.; Kaczer, Ben; Schram, Tom; Ritzenthaler, Romain; Groeseneken, Guido; Asenov, A. (2013) -
New insights into defect loss, slowdown, and device lifetime enhancement
Duan, M.; Zhang, J. F.; Ji, Z.; Zhang, W. D.; Kaczer, Ben; De Gendt, Stefan; Groeseneken, Guido (2013) -
New insights into defect loss, slowdown, and device lifetime enhancement
Duan, M.; Zhang, J. F.; Ji, Z.; Zhang, W. D.; Kaczer, Ben; De Gendt, Stefan; Groeseneken, Guido (2013) -
Predictive As-grown-generation (A-G) model for BTI-induced device/circuit level variations in nanoscale technology nodes
Gao, R.; Ji, Zhigang; Hatta, S.M.; Zhang, J.F.; Franco, Jacopo; Kaczer, Ben; Zhang, W.; Duan, M.; De Gendt, Stefan; Linten, Dimitri; Groeseneken, Guido; Bi, J.; Liu, M. (2016) -
Time-dependent variation: A new defect-based prediction methodology
Duan, M.; Zhang, J. F.; Ji, Z.; Zhang, W.; Kaczer, Ben; Schram, Tom; Ritzenthaler, Romain; Thean, Aaron; Groeseneken, Guido; Asenov, A. (2014) -
Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure
Ma, J; Zhang, J.F.; Ji, Z.; Benbakhti, B.; Duan, M.; Zhang, W.; Zheng, X.F.; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2013) -
Understanding charge traps for optimizing Si-passivated Ge nMOSFETs
Ren, Pengpeng; Gao, R.; Ji, Zhigang; Arimura, Hiroaki; Zhang, J. F.; Wang, R.; Duan, M.; Zhang, W.; Franco, Jacopo; Sioncke, Sonja; Cott, Daire; Mitard, Jerome; Witters, Liesbeth; Mertens, Hans; Kaczer, Ben; Mocuta, Anda; Collaert, Nadine; Linten, Dimitri; Huang, R.; Thean, Aaron; Groeseneken, Guido (2016)