Browsing by author "Kissinger, G."
Now showing items 1-17 of 17
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Correlation between grown-in silicon substrate defects and silicon gate oxide breakdown characteristics
Vanhellemont, Jan; Kissinger, G.; Kenis, Karine; Depas, Michel; Gräf, D.; Lambert, U.; Wagner, P. (1996) -
Defects in As-grown silicon and their evolution during heat treatments
Vanhellemont, Jan; Dornberger, E.; Esfandyari, J.; Kissinger, G.; Trauwaert, Marie-Astrid; Bender, Hugo; Gräf, D.; Lambert, U.; von Ammon, W. (1997) -
Grown-in defect density spectra in czochralski silicon wafers
Kissinger, G.; Gräf, D.; Lambert, U.; Vanhellemont, Jan; Richter, H. (1996) -
Infrared studies of oxygen precipitation related defects in silicon after various thermal treatments
Vanhellemont, Jan; Kissinger, G.; Clauws, P.; Kaniava, Arvydas; Libezny, Milan; Gaubas, Eugenijus; Simoen, Eddy; Richter, H.; Claeys, Cor (1996) -
Investigation of crystal defects in As-grown and processed silicon wafers and heteroepitaxial layers by infrared light scattering
Kissinger, G.; Vanhellemont, Jan; Gräf, D.; Zulehner, W.; Claeys, Cor; Richter, H. (1995) -
Investigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomography
Kissinger, G.; Vanhellemont, Jan; Simoen, Eddy; Claeys, Cor; Richter, H. (1996) -
IR-LST a powerful non-invasive tool to observe crystal defects in as-grown silicon, after device processing, and in heteroepitaxial layers
Kissinger, G.; Vanhellemont, Jan; Gräf, D.; Claeys, Cor; Richter, H. (1996) -
Lattice defects in high quality as-grown CZ silicon, studied with light scattering and preferential etching techniques
Vanhellemont, Jan; Kissinger, G.; Gräf, D.; Kenis, Karine; Depas, Michel; Mertens, Paul; Lambert, U.; Heyns, Marc; Claeys, C.; Richter, H.; Wagner, Patrick (1995) -
Light scattering tomography study of lattice defects in high quality as-grown Cz silicon wafers and their evolution during gate oxidation
Vanhellemont, Jan; Kissinger, G.; Gräf, D.; Kenis, Karine; Depas, Michel; Mertens, Paul; Lambert, U.; Heyns, Marc; Claeys, Cor; Richter, H.; Wagner, P. (1996) -
Measurement, modelling and simulation of defects in as-grown Czrochalski silicon
Vanhellemont, Jan; Senkader, S.; Kissinger, G.; Higgs, V.; Trauwaert, Marie-Astrid; Graef, D.; Lambert, U.; Wagner, Patrick (1997) -
Non-destructive techniques for identification and control of processing induced extended defects in silicon and correlation with device yield
Vanhellemont, Jan; Milita, S.; Servidori, M.; Higgs, V.; Kissinger, G.; Gramenova, Emilia; Simoen, Eddy; Jansen, Philippe (1997) -
Observation of stacking faults and prismatic punching systems in silicon by light scattering tomography
Kissinger, G.; Vanhellemont, Jan; Claeys, Cor; Richter, H. (1996) -
On the impact of grown-in silicon oxide precipitate nuclei on silicon gate oxide integrity
Vanhellemont, Jan; Kissinger, G.; Kenis, Karine; Depas, Michel; Gräf, D.; Lambert, U.; Wagner, Patrick (1996) -
On the impact of grown-in substrate defects and iron contamination on gate oxide integrity
Vanhellemont, Jan; Kissinger, G.; Kenis, Karine; Depas, Michel; Gräf, D.; Lambert, U.; Wagner, Patrick (1996) -
On the nature of grown-in defects in silicon: dependence on pulling conditions and evolution during treatments
Vanhellemont, Jan; Kissinger, G.; Senkader, S.; Gräf, D.; Kenis, Karine; Depas, Michel; Lambert, U.; Wagner, Patrick (1996) -
On the recombination activity of oxygen precipitation related lattice defects in silicon
Vanhellemont, Jan; Kaniava, Arvydas; Libezny, Milan; Simoen, Eddy; Kissinger, G.; Gaubas, E.; Claeys, C.; Clauws, P. (1995) -
PL study of oxygen related defects in silicon
Libezny, Milan; Kaniava, Arvydas; Kissinger, G.; Nijs, Johan; Claeys, Cor; Vanhellemont, Jan (1995)