Browsing by author "Russ, Christian"
Now showing items 1-20 of 29
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A compact model for the grounded-gate nMOS behaviour under CDM ESD stress
Russ, Christian; Verhaege, Koen; Bock, Karlheinz; Roussel, Philippe; Groeseneken, Guido; Maes, Herman (1996) -
A compact model for the grounded-gate nMOS transistor behaviour under CDM ESD stress
Russ, Christian; Verhaege, Koen; Bock, Karlheinz; Roussel, Philippe; Groeseneken, Guido; Maes, Herman (1998) -
A quantitative inquisition into ESD sensitivity to strain in nanoscale CMOS protection devices
Sarkar, Deblina; Thijs, Steven; Linten, Dimitri; Russ, Christian; Gossner, Harald; Banerjee, Kaustav (2010) -
Analysis of HBM ESD testers and specifications using a fourth order lumped element model
Verhaege, Koen; Roussel, Philippe; Groeseneken, Guido; Maes, Herman; Gieser, H.; Russ, Christian; Egger, P.; Guggenmos, X.; Kuper, F. G. (1994) -
Characterization and optimization of sub-32nm FinFET devices for ESD applications
Thijs, Steven; Tremouilles, David; Russ, Christian; Griffoni, Alessio; Collaert, Nadine; Rooyackers, Rita; Linten, Dimitri; Scholz, Mirko; Duvvury, Charvaka; Gossner, Harald; Jurczak, Gosia; Groeseneken, Guido (2008) -
Design methodology for FinFET GG-NMOS ESD protecction devices
Thijs, Steven; Russ, Christian; Tremouilles, David; Linten, Dimitri; Scholz, Mirko; Jurczak, Gosia; Collaert, Nadine; Rooyackers, Rita; Duvvury, Charvaka; Gossner, Harald; Groeseneken, Guido (2008-05) -
Design methodology of FinFET devices that meet IC-level HBM ESD targets
Thijs, Steven; Russ, Christian; Tremouilles, David; Linten, Dimitri; Scholz, Mirko; Jurczak, Gosia; Collaert, Nadine; Rooyackers, Rita; Sawada, M; Nakaei, T; Hasebe, T; Duvvury, Charvaka; Gossner, Harald; Groeseneken, Guido (2008-09) -
Electrical and thermal scaling trends for SOI FinFET ESD design
Thijs, Steven; Tremouilles, David; Griffoni, Alessio; Russ, Christian; Linten, Dimitri; Scholz, Mirko; Collaert, Nadine; Rooyackers, Rita; Duvvury, Charvaka; Groeseneken, Guido (2009) -
Electrical-based ESD characterization methodology for ultrathin body SOI MOSFETs
Griffoni, Alessio; Thijs, Steven; Russ, Christian; Tremouilles, David; Linten, Dimitri; Scholz, Mirko; Simoen, Eddy; Claeys, Cor; Meneghesso, Gaudenzio; Groeseneken, Guido (2010) -
Electrothermal device simulation of a gg-nMOSt under HBM ESD conditions
Russ, Christian; Kreisbeck, J.; Gieser, H.; Guggenmos, X.; Kanert, W. (1995) -
ESD protection elements during HBM stress tests - further numerical and experimental results
Russ, Christian; Gieser, H.; Verhaege, Koen (1994) -
ESD Protection Elements during HBM Stress Tests - Further Numerical and Experimental Results
Russ, Christian; Gieser, H.; Verhaege, K. (1994) -
ESD protection elements during HBM stress tests - further numerical and experimental results
Russ, Christian; Gieser, H.; Verhaege, Koen (1995) -
ESD-aspects of FinFETs and other most advanced devices
Russ, Christian; Gossner, Harald; Thijs, Steven; Griffoni, Alessio (2010) -
Grounded-gate nMOS transistor behaviour under CDM ESD stress conditions
Verhaege, Koen; Russ, Christian; Luchies, J. M.; Groeseneken, Guido; Kuper, F. G. (1997) -
Influence of well profile and gate length on the ESD performance of a fully silicided 0.25 μm CMOS technology
Bock, Karlheinz; Russ, Christian; Badenes, Gonçal; Groeseneken, Guido; Deferm, Ludo (1997) -
Justifications for reducing HBM and MM ESD qualification test time
Verhaege, Koen; Robinson-Hahn, D.; Russ, Christian; Farris, M.; Scanlon, J.; Lin, D.; Veltri, J.; Groeseneken, Guido (1996) -
Methodology for design optimization of SOI FinFET grounded-gate NMOS devices
Thijs, Steven; Russ, Christian; Tremouilles, David; Griffoni, Alessio; Linten, Dimitri; Scholz, Mirko; Collaert, Nadine; Rooyackers, Rita; Jurczak, Gosia; Groeseneken, Guido (2010) -
Next generation bulk FinFET devices and their benefits for ESD robustness
Griffoni, Alessio; Thijs, Steven; Russ, Christian; Trémouilles, David; Linten, Dimitri; Scholz, Mirko; Collaert, Nadine; Witters, Liesbeth; Meneghesso, Gaudentio; Groeseneken, Guido (2009) -
Next generation FinFET devices in bulk silicon technology and their benefits for ESD robustness
Griffoni, Alessio; Thijs, Steven; Russ, Christian; Tremouilles, David; Linten, Dimitri; Scholz, Mirko; Collaert, Nadine; Witters, Liesbeth; Meneghesso, Gaudenzio; Groeseneken, Guido (2009)